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    MJ3001 Search Results

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    MJ3001 Price and Stock

    STMicroelectronics MJ3001

    TRANS NPN DARL 80V 10A TO3
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    DigiKey MJ3001 Bulk
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    Central Semiconductor Corp MJ3001 TIN/LEAD

    Transistor Darlington NPN 80V 10A 2-Pin TO-3 Sleeve (Alt: MJ3001 TIN/LEAD)
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    Avnet Americas MJ3001 TIN/LEAD 80
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    New Jersey Semiconductor Products, Inc. MJ3001

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MJ3001 2,176 1
    • 1 $7.84
    • 10 $5.096
    • 100 $3.3971
    • 1000 $3.2144
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    Motorola Semiconductor Products MJ3001

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    Bristol Electronics MJ3001 61
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    Quest Components MJ3001 48
    • 1 $4
    • 10 $2.5
    • 100 $2.2
    • 1000 $2.2
    • 10000 $2.2
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    MJ3001 1
    • 1 $2.8
    • 10 $2.8
    • 100 $2.8
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    MJ3001 1
    • 1 $6.9873
    • 10 $6.9873
    • 100 $6.9873
    • 1000 $6.9873
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    New Jersey Semiconductor Products Inc MJ3001

    TRANSISTOR,BJT,DARLINGTON,NPN,80V V(BR)CEO,10A I(C),TO-204AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MJ3001 1,740
    • 1 $10.5
    • 10 $10.5
    • 100 $10.5
    • 1000 $3.675
    • 10000 $3.675
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    MJ3001 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MJ3001 Central Semiconductor Power Transistors Original PDF
    MJ3001 Comset Semiconductors Silicon Epitaxial Base Darlington Original PDF
    MJ3001 Motorola 10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS Original PDF
    MJ3001 Unknown 10 Ampere Darlington Power Transistors Complementary Silicon Original PDF
    MJ3001 On Semiconductor Medium-Power Complementary Silicon Transistor Original PDF
    MJ3001 On Semiconductor DARLINGTON POWER TRANSISTOR COMPLEMENTARY SILICON Original PDF
    MJ3001 Semelab Complementary Darlington Power Transistor Original PDF
    MJ3001 STMicroelectronics Medium-power complementary silicon transistor - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=1kmin / fT(Hz)=1M / Pwr(W)=150 Original PDF
    MJ3001 Central Semiconductor POWER DARLINGTON TRANSISTORS (METAL) Scan PDF
    MJ3001 Crimson Semiconductor EPITAXIAL BASE Transistor Scan PDF
    MJ3001 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    MJ3001 Motorola The European Selection Data Book 1976 Scan PDF
    MJ3001 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MJ3001 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MJ3001 Motorola European Master Selection Guide 1986 Scan PDF
    MJ3001 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJ3001 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MJ3001 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MJ3001 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    MJ3001 Unknown Basic Transistor and Cross Reference Specification Scan PDF

    MJ3001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJ3001

    Abstract: MJ3000 MJ2501 transistor mj3001 MJ2500 MJ3001 equivalent MJ3000/MJ3001
    Text: MJ2500 - MJ2501 PNP MJ3000 - MJ3001 NPN SILICON EPITAXIAL-BASE DARLINGTON The MJ2500, and MJ2501 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications.


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    PDF MJ2500 MJ2501 MJ3000 MJ3001 MJ2500, MJ2500 MJ3000 transistor mj3001 MJ3001 equivalent MJ3000/MJ3001

    mj3001

    Abstract: mj2501 MJ3000 AIN60
    Text: MJ2500/MJ2501 MJ3000/MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are


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    PDF MJ2500/MJ2501 MJ3000/MJ3001 MJ2501 MJ3001 MJ2500, MJ3000 AIN60

    Untitled

    Abstract: No abstract text available
    Text: MJ3001 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)400uÌ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k


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    PDF MJ3001

    mj3001

    Abstract: No abstract text available
    Text: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u


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    PDF MJ2501 MJ3001 MJ3001. mj3001

    MJ3001

    Abstract: transistor mj3001 mj2501 MJ3001 equivalent SGS-Thomson
    Text: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power


    Original
    PDF MJ2501 MJ3001 MJ2501 MJ3001. MJ3001 transistor mj3001 MJ3001 equivalent SGS-Thomson

    transistor mj3001

    Abstract: MJ2501 MJ3001
    Text: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES • ■ APPLICATION AUDIO POWER AMPLIFIER ■ DC-AC CONVERTER ■ EASY DRIVER FOR LOW VOLTAGE DC MOTOR ■ GENERAL POWER SWITCHING


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    PDF MJ2501 MJ3001 MJ2501 MJ3001. transistor mj3001 MJ3001

    transistor MJ2501

    Abstract: transistor mj3001 MJ2501 MJ3001
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor DESCRIPTION •Built-in Base-Emitter Shunt Resistors ·High DC current gainhFE = 1000 Min @ IC = -5A ·Collector-Emitter Breakdown VoltageV(BR)CEO= -80V(Min) ·Complement to type MJ3001


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    PDF MJ3001 -100mA; -20mA -50mA transistor MJ2501 transistor mj3001 MJ2501 MJ3001

    MJ3001

    Abstract: MJ2501
    Text: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power


    Original
    PDF MJ2501 MJ3001 MJ2501 MJ3001. MJ3001

    MJ3001

    Abstract: MJ2501 MJ3001 equivalent Premier Devices transistor mj3001 npn power darlington to-3 150w
    Text: MJ2501 & MJ3001 10A, 150W, 80V Features: • Medium-power complementary Silicon Transistors for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain hFE = 1000 Typical at IC = 5.0A. • Monolithic construction with built Base-Emitter Shunt Resistors.


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    PDF MJ2501 MJ3001 MJ2501 MJ3001 MJ3001 equivalent Premier Devices transistor mj3001 npn power darlington to-3 150w

    npn darlington transistor 150 watts

    Abstract: transistor mj3001 MOTOROLA POWER TRANSISTOR MOTOROLA TRANSISTOR NPN bipolar junction transistors max hfe 2000 MJ2501 MJ3001 transistor MJ2501 MJ3001 motorola transistor mj3001 to-3
    Text: MOTOROLA Order this document by MJ2501/D SEMICONDUCTOR TECHNICAL DATA PNP MJ2501 NPN Medium-Power Complementary Silicon Transistors MJ3001 Motorola Preferred Devices . . . for use as output devices in complementary general purpose amplifier applications. 10 AMPERE


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    PDF MJ2501/D MJ2501 MJ3001 npn darlington transistor 150 watts transistor mj3001 MOTOROLA POWER TRANSISTOR MOTOROLA TRANSISTOR NPN bipolar junction transistors max hfe 2000 MJ2501 MJ3001 transistor MJ2501 MJ3001 motorola transistor mj3001 to-3

    Untitled

    Abstract: No abstract text available
    Text: MJ3001 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF MJ3001 O204AA) 31-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: MJ3001 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF MJ3001 O204AA) 18-Jun-02

    transistor darlington package to.3

    Abstract: transistor mj3001 MJ2501 transistor mj3001 to-3 MJ3001 equivalent transistor darlington package to.3 3 pin MJ3001 150w darlington transistor to3 package pnp 150w darlington transistor to3 package
    Text: MJ2501 - PNP MJ3001 - NPN SEME LAB MECHANICAL DATA Dimensions in mm inches 4 0 .0 1 (1 .5 7 5 ) M a x . 2 6 .6 7 (1 .0 5 0 ) M a x . COMPLEMENTARY DARLINGTON POWER TRANSISTOR 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . APPLICATIONS 1 1 .4 3 (0 .4 5 0 )


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    PDF MJ2501 MJ3001 MJ3001 transistor darlington package to.3 transistor mj3001 transistor mj3001 to-3 MJ3001 equivalent transistor darlington package to.3 3 pin 150w darlington transistor to3 package pnp 150w darlington transistor to3 package

    MJ2501

    Abstract: MJ3001 MJ3000 MJ2500 P003N
    Text: MJ2500/MJ2501 MJ3000/MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are


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    PDF MJ2500/MJ2501 MJ3000/MJ3001 MJ2501 MJ3001 MJ2500, MJ3000 MJ2500 MJ2501 MJ3000 MJ2500 P003N

    Untitled

    Abstract: No abstract text available
    Text: SEMELAB LTD 37E D Û1331Ô7 DGGGDbO 1 • SMLB m ‘ Î'rîwî. Type No. Reliability Polarity Option MJ900 MJ901 MJ2500 MJ2501 MJ2955 SCREEN SCREEN SCREEN SCREEN CECC PNP PNP PNP PNP PNP MJ3000 MJ3001 MJ3201 HJ3202 MJ3238 SCREEN SCREEN HX-REL HI-REL HI-REL


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    PDF MJ900 MJ901 MJ2500 MJ2501 MJ2955 MJ3000 MJ3001 MJ3201 HJ3202 MJ3238

    motorola MJ3000

    Abstract: transistor MJ2501 MJ3000 circuit mj2501 mj3000 MJ3001 transistor mj3001
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA ‘"W M f a y f lf t w a n g o g s M aKM SA •M -H H ttM A ) Medium-Power Complementary Silicon Transistors PNP MJ2500 MJ2501* NPN MJ3000 MJ3001* . . . for use as output devices in complementary general purpose amplifier applica­


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    PDF MJ2500 MJ2501* MJ3000 MJ3001* MJ3000 MJ2501 motorola MJ3000 transistor MJ2501 MJ3000 circuit MJ3001 transistor mj3001

    Untitled

    Abstract: No abstract text available
    Text: rz 7 SCS-THOM SON MJ2501 i*! i[LI ¥[M0 gS MJ3001 COMPLEMENTARY SIUCOnTto W ^ TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3


    OCR Scan
    PDF MJ2501 MJ3001 MJ2501 MJ3001.

    transistor mj3001

    Abstract: j3000 MJ3001 transistor MJ2501 MJ2500 MJ2501 AN-415 J2500 J2501 MJ3000
    Text: MJ2500, MJ2501, MJ3000, MJ3001 continued E L E C T R IC A L C H A R A C T E R IS T IC S (Tc = 2S°C unless otherwise noted)_ _ _ | Characteristic | Symbol | M in | M ix I O F F C H A R A C T E R IS T IC S


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    PDF MJ2500, MJ2501, MJ3000, MJ3001 J3000 J2501. MJ3001 J2500, MJ3000 transistor mj3001 transistor MJ2501 MJ2500 MJ2501 AN-415 J2500 J2501

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON MJ2501 MJ3001 RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3


    OCR Scan
    PDF MJ2501 MJ3001 MJ2501 MJ3001. P003F

    transistor mj3001

    Abstract: TRANSISTOR 2SC 635 MJ3000 MJ3000 circuit MJ2501 MJ3001 J3000 j-2500 MJ2500 AN-415
    Text: MJ2500, MJ2501 PNP SILICON MJ3000, MJ3001 NPN 10 A M PERE D A R L IN G T O N POWER T R A N SIST O R S C O M PLEM EN T A R Y SILIC O N MEDIUM-POW ER C O M PLEM EN TA R Y SILIC O N T R A N SIST O R S . 6 0 -8 0 V O L T S 150 W A T T S for use as o u tp u t devices in co m ple m e n tary general purpose


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    PDF MJ2500, MJ2501 MJ3000, MJ3001 MJ2500 MJ3000 -MJ2501 transistor mj3001 TRANSISTOR 2SC 635 MJ3000 circuit J3000 j-2500 AN-415

    MJ3001

    Abstract: mj3000
    Text: SGS-THOMSON MJ2500/MJ2501 MJ3000/MJ3001 ÜLieTOOffäDOl COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are


    OCR Scan
    PDF MJ2500/MJ2501 MJ3000/MJ3001 MJ2501 MJ3001 MJ2500, MJ2501 MJ3000 mj3000

    MJ2500

    Abstract: MJ2501 MJ3001 MJ3000 MJ3000/MJ3001
    Text: MJ2500 MJ2501 MJ3000 MJ3001 PNP NPN SILICON COMPLEMENTARY TRANSISTORS POWER DARLINGTON 10 AMPERES, 60-80 VOLTS semicomluctc * Central Semiconductor Corp. 145 Adams Avenue Hauppauge, New York 11 788 JEDEC T0-3 CASE DESCRIPTION The CENTRAL S EM ICONDUCTOR MJ2500, MJ3000 Series are mediurn - power Complementary Silicon


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    PDF MJ2500 MJ2501 MJ3000 MJ3001 MJ2500, MJ2501 MJ3000/MJ3001

    j3001

    Abstract: I/J3001-3002 MJ2501 MJ3000M
    Text: SGS-THOMSON RflDeiRi IILiera [S!lD ei MJ2500/MJ2501 MJ3000/MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors


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    PDF MJ2500/MJ2501 MJ3000/MJ3001 MJ2501 MJ3001 MJ2500, MJ3000 J2500 J3000 j3001 I/J3001-3002 MJ3000M

    2SC 1177

    Abstract: npn darlington transistor 150 watts MJ2500 MJ2501 MJ3000 MJ3001 darlington complementary power amplifier MJ3000 circuit MJ3000/MJ3001
    Text: MJ2500, MJ2501 PNP SILICON MJ3000, MJ3001 NPN 10 A M PERE D A R L IN G T O N POWER T R A N SIST O R S C O M PLEM EN T A R Y SILIC O N MEDIUM-POW ER C O M PLEM EN TA R Y SILIC O N T R A N SIST O R S . 6 0 -8 0 V O L T S 150 W A T T S for use as o u tp u t devices in co m ple m e n tary general purpose


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    PDF MJ2500, MJ2501 MJ3000, MJ3001 MJ2500 MJ3000 2SC 1177 npn darlington transistor 150 watts darlington complementary power amplifier MJ3000 circuit MJ3000/MJ3001