MJE18004 Search Results

EQUIVALENT FOR mjf18004

Abstract: MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004
Contextual Info: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors

221D

Abstract: MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
Contextual Info: ON Semiconductor MJE18004 * MJF18004 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art

mjf18004

Contextual Info: ON Semiconductor MJE18004 * MJF18004 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state−of−the−art

MJE18004D2

Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 2A200
Contextual Info: ON Semiconductor MJE18004D2 High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS The MJE18004D2 is state−of−art High Speed High gain BIPolar

npn transistor 400 volts.10 amperes

Contextual Info: ON Semiconductor MJE18004D2 High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS The MJE18004D2 is state−of−art High Speed High gain BIPolar

MJE18004

Contextual Info: SavantIC Semiconductor Product Specification MJE18004 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High voltage ,high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts PINNING

18004D2

Abstract: AYWW marking code IC MJE18004D2 MJE18004D2G MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: MJE18004D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network http://onsemi.com POWER TRANSISTORS 5 AMPERES, 1000 VOLTS, 75 WATTS The MJE18004D2 is state−of−art High Speed High gain BIPolar

c 547 c transistor

Contextual Info: MOTOROLA Order this docum ent by MJE18004D2/D SEMICONDUCTOR TECHNICAL DATA MJE18004D2 D esigner’s Data Sheet High Speed, High Gain Bipolar NPN Pow er Ttansistor w ith Integrated C o llecto r-E m itter Diode and B uilt-in Efficient A ntisaturation N etw o rk

transistor rc 3866

Abstract: t 3866 to220 power transistor t 3866 transistor equivalent transistor EQUIVALENT FOR mjf18004 bs170 replacement EIA/transistor rc 3866 pin configuration transistor bd140 TRANSISTOR REPLACEMENT table for transistor transistor cross reference BU108
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors MJW16212* The MJW16212 is a state–of–the–art SWITCHMODE bipolar power transistor. It

221D

Abstract: MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
Contextual Info: ON Semiconductort MJE18004 * MJF18004 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art

OL35

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18004D2 D esigner’s Data Sheet POWER TRANSISTORS S AMPERES 1000 VOLTS 75 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C ollector-E m ltter Diode and B uilt-in E fficient A ntisaturation N etw ork

18004D2

Contextual Info: MJE18004D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network http://onsemi.com POWER TRANSISTORS 5 AMPERES, 1000 VOLTS, 75 WATTS The MJE18004D2 is state−of−art High Speed High gain BIPolar

vce 1200 and 5 amps npn transistor to 220 pack

Abstract: 221D MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
Contextual Info: MOTOROLA Order this document by MJE18004/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MJE18004 * MJF18004 * Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES

Contextual Info: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors

MJF18004

Abstract: 221D MJE18004 MJE18004G MJF18004G MTP8P10
Contextual Info: MJE18004, MJF18004 Preferred Device SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004 have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts.

312oc

Abstract: mjf*8004 MJF18004 transistor mjf18004 221A-06 221D MJE18004 2C230
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet SWITCHMODE™ MJE18004* M JF18004* NPN Bipolar Power Transistor For Switching Power Supply Applications ‘Motorola Preferred Dovlc* POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state-of-the-art die designed

MJE18004D2

Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 TC355
Contextual Info: ON Semiconductort High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network MJE18004D2 POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS The MJE18004D2 is state–of–art High Speed High gain BIPolar

EQUIVALENT FOR mjf18004

Abstract: 2N3055 plastic BU 647 motorola MJ480 motorola AN485 transistor 3655 BU108 BD139 fall time 2N6491 equivalent BD139 circuits
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MJE18004 * MJF18004 * Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art die designed

Contextual Info: MOTOROLA Order this document by MJE18004D2/D SEMICONDUCTOR TECHNICAL DATA MJE18004D2 D esigner’s Data Sheet POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith In tegrated C o llecto r-E m itter Diode and B uilt-in Efficient

2SC1943

Abstract: bd135 TRANSISTOR REPLACEMENT GUIDE motorola transistor cross reference TRANSISTOR 2sb546 transistor 2SA1046 BU108 TRANSISTOR REPLACEMENT GUIDE c 3198 transistor TIP142 TRANSISTOR REPLACEMENT transistor Electronic ballast mje13007
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18004D2  Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network

18004D2

Abstract: MJE18004D2 MJE18004D2G MJE210 MPF930 MTP8P10 MUR105
Contextual Info: MJE18004D2 High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network http://onsemi.com POWER TRANSISTORS 5 AMPERES, 1000 VOLTS, 75 WATTS The MJE18004D2 is state−of−art High Speed High gain BIPolar

MJE18004D2

Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: ON Semiconductor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network MJE18004D2 POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS The MJE18004D2 is state–of–art High Speed High gain BIPolar

Contextual Info: MJE18004G, MJF18004G SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts.

bipolar power transistor data

Abstract: MJE18004D2 MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: MOTOROLA Order this document by MJE18004D2/D SEMICONDUCTOR TECHNICAL DATA MJE18004D2 Designer's  Data Sheet High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient