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Motorola Semiconductor Products MPF930
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Bristol Electronics	MPF930		41			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	MPF930		127			1 $0.495 10 $0.495 100 $0.33 1000 $0.33 10000 $0.33	Buy Now
	MPF930		20			1 $11.235 10 $7.49 100 $7.49 1000 $7.49 10000 $7.49	Buy Now
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MPF930 Datasheets (10)

Part	Manufacturer	Description	Datasheet Type	PDF
MPF930	Motorola	FET Transistor, N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR	Original	PDF
MPF930	Motorola	TMOS Switching	Original	PDF
MPF930	On Semiconductor	Small Signal MOSFET 2 Amps, 35, 60, 90 Volts	Original	PDF
MPF930	Motorola	European Master Selection Guide 1986	Scan	PDF
MPF930	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
MPF930	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
MPF930	Unknown	FET Data Book	Scan	PDF
MPF930	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
MPF930-D	On Semiconductor	Small Signal MOSFET 2 Amps, 35, 60, 90 Volts N-Cha	Original	PDF
MPF930RLRE	On Semiconductor	TMOS Switching N-Channel	Original	PDF

MPF930 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MPF930A Abstract: MPF930 MPF960 MPF990RLRA MPF990 MPF930 Transistor MPF960 equivalent MPF930RLRE MPF960RLRA MPF990RLRP Text: MPF930, MPF960, MPF990 Preferred Device Small Signal MOSFET 2 Amps, 35, 60, 90 Volts N–Channel TO–92 MAXIMUM RATINGS Rating http://onsemi.com Symbol MPF930 MPF960 MPF990 Unit Drain–Source Voltage VDS 35 60 90 Vdc Drain–Gate Voltage VDG 35 60 90 Vdc	Original	PDF	MPF930, MPF960, MPF990 MPF930 MPF960 MPF930) MPF960) MPF990) r14525 MPF930A MPF930 MPF960 MPF990RLRA MPF990 MPF930 Transistor MPF960 equivalent MPF930RLRE MPF960RLRA MPF990RLRP
MPF960 equivalent Abstract: BC108 characteristic Characteristic curve BC107 BC237 bc107a pin out Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement MPF930 MPF960 MPF990 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol MPF930 MPF960 MPF990 Unit Drain – Source Voltage VDS 35 60 90 Vdc Drain – Gate Voltage VDG 35 60	Original	PDF	MPF930 MPF960 MPF990 MPF990 226AE) MSC1621T1 MSC2404 MSD1819A MPF960 equivalent BC108 characteristic Characteristic curve BC107 BC237 bc107a pin out
Untitled Abstract: No abstract text available Text: Eu ^ami-donauctoi ^Product*., One. </ TMOS Switching MPF930 MPF960 MPF990 N-Channel — Enhancement 3 DRAIN 1 SOURCE MAXIMUM RATINGS Rating Drain -Source Voltage Drain-Gate Voltage Gate-Source Voltage — Continuous — Non-repetitive tp < 50 u.s Symbol	Original	PDF	MPF930 MPF960 MPF990 O-226AE)
MPF960 Abstract: MPF990 MPF930 motorola MPF990 Text: MOTOROLA Order this document by MPF930/D SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement MPF930 MPF960 MPF990 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol MPF930 MPF960 MPF990 Unit Drain – Source Voltage VDS 35 60 90 Vdc	Original	PDF	MPF930/D MPF930 MPF960 MPF990 226AE) MPF960 MPF990 MPF930 motorola MPF990
2N5337 Abstract: 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100 MUR8100E Text: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar	Original	PDF	MJW16206/D MJW16206 MJF16206 MJW16206 MJW16206/D* 2N5337 2N6191 MR856 MTP8P10 MUR8100 MUR8100E
*e13007 Abstract: bipolar transistor td tr ts tf equivalent of transistor mje13007 Text: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V	Original	PDF	MJE13007 MJE13007 O-220 QW-R203-019 *e13007 bipolar transistor td tr ts tf equivalent of transistor mje13007
EQUIVALENT FOR mjf18004 Abstract: MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004 Text: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors	Original	PDF	MJW16212/D MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJF18008 MJE18008) MJW16212* EQUIVALENT FOR mjf18004 MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004
02D2G Abstract: MJD18002D2T4G 18002d2 MJD18002D2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12 Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot	Original	PDF	MJD18002D2 MJD18002D2 MJD18002D2/D 02D2G MJD18002D2T4G 18002d2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12
221D Abstract: MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105 Text: ON Semiconductor MJE18004 * MJF18004 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art	Original	PDF	MJE18004 MJF18004 MJE/MJF18004 r14525 MJE18004/D 221D MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
18004D2 Abstract: MJB18004D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SOT223 Package Text: ON Semiconductort High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network MJB18004D2T4 POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS D2PAK For Surface Mount The MJB18004D2T4 is state–of–art High Speed High gain Bipolar	Original	PDF	MJB18004D2T4 MJB18004D2T4 18004D2 r14525 MJB18004D2T4/D 18004D2 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SOT223 Package
221D Abstract: MJE18006 MJE210 MJF18006 MPF930 MTP8P10 MUR105 Text: MOTOROLA Order this document by MJE18006/D SEMICONDUCTOR TECHNICAL DATA MJE18006 * MJF18006 *  Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 6.0 AMPERES	Original	PDF	MJE18006/D* MJE18006/D 221D MJE18006 MJE210 MJF18006 MPF930 MTP8P10 MUR105
BUL44 Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 Text: ON Semiconductort BUL44 SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS The BUL44 have an applications specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies	Original	PDF	BUL44 BUL44 r14525 BUL44/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105
MTP8P10 Abstract: MUR105 BUD43D2 MJE210 MPF930 MTP12N10 Text: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally	Original	PDF	BUD43D2 BUD43D2 BUD43D2: r14525 BUD43D2/D MTP8P10 MUR105 MJE210 MPF930 MTP12N10
tip122 tip127 audio amp schematic Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.	Original	PDF	DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier

221D Abstract: MJE18009 MJE210 MJF18009 MPF930 MTP12N10 MTP8P10 MUR105 Text: MOTOROLA Order this document by MJE18009/D SEMICONDUCTOR TECHNICAL DATA MJE18009 MJF18009  Data Sheet SWITCHMODE NPN Designer's Silicon Planar Power Transistor The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic ballast “light	Original	PDF	MJE18009/D MJE18009 MJF18009 MJE/MJF18009 E69369 MJE18009/D* 221D MJE18009 MJE210 MJF18009 MPF930 MTP12N10 MTP8P10 MUR105
221D Abstract: MJE18008 MJE210 MJF18008 MPF930 MTP8P10 MUR105 Text: MOTOROLA Order this document by MJE18008/D SEMICONDUCTOR TECHNICAL DATA MJE18008 * MJF18008 *  Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES	Original	PDF	MJE18008/D* MJE18008/D 221D MJE18008 MJE210 MJF18008 MPF930 MTP8P10 MUR105
BC337 BC547 Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the	Original	PDF	MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
PF960 Abstract: D004 power ic pf990 Text: MOTOROLA SEM ICONDUCTOR MPF930 MPF960 MPF990 TECHNICAL DATA N -C H A N N E L E N H A N C E M E N T -MO DE TM O S F IE L D -E F F E C T T R A N S IS T O R 2 .0 A M P E R E N-CHANNEL TMOS FETs T h e s e T M O S FE Ts a re d e s ig n e d f o r h ig h - s p e e d s w it c h in g a p p li	OCR Scan	PDF	MPF930 MPF960 MPF990 MPF930, PF960 D004 power ic pf990
F930 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching MPF930 MPF960 MPF990 N-Channel — Enhancement 3 DRAIN 2 GATE V S \ 1 SOURCE MAXIMUM RATINGS Rating D ra in -S o u rc e Voltage D r a in -G a te Voltage Symbol MPF930 MPF960 MPF990 Unit VdS 35 60 90 Vdc	OCR Scan	PDF	MPF930 MPF960 MPF990 MPF930 MPF960 F930
TO-226-AE Abstract: No abstract text available Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA TM O S Sw itching N -C h a n n e l — Enhancem ent MPF930 MPF960 MPF990 3 DRAIN M A X IM U M R A T IN G S Symbol MPF930 MPF960 MPF990 Unit Drain-Source Voltage VD S 35 60 90 Vdc Drain-Gate Voltage V DG 35 60 90 Vdc	OCR Scan	PDF	MPF930 MPF960 MPF990 MPF990 O-226AE) GCH37S7 TO-226-AE
motorola mpf990 Abstract: No abstract text available Text: MPF930* MPF960* MPF990* M A X IM U M R ATIN G S Rating Symbol MPF930 MPF960 MPF990 Unit Drain-Source Voltage VDS 35 60 90 Vdc Drain-Gate Voltage VDG 35 60 90 Vdc Gate-Source Voltage — Continuous - Non-repetitive tp s 50 ¿¿s Drain Current Continuous (1)	OCR Scan	PDF	MPF930* MPF960* MPF990* MPF930 MPF960 MPF990 O-226AE) MPF990 motorola mpf990
F930 Abstract: T12P MPF960 F990 Text: MPF930* MPF960* MPF990* M AXIMUM RATINGS Rating Symbol MPF930 MPF960 MPF990 D ra in -S o u rc e V o lta g e V DS 35 D ra in -G a te V o lta g e V DG 35 G a te -S o u rc e V o lta g e V GS CASE 29-03, STYLE 22 TO-92 TO-226AE Unit 60 90 Vdc 60 90 V dc 3 D rain	OCR Scan	PDF	MPF930* MPF960* MPF990* MPF930 MPF960 MPF990 O-226AE) MPF930, MPF960, F930 T12P F990
TP12N10 Abstract: je210 MJF16206 desaturation design 1200 volt npn MJW16206 MPF930 MTP8P10 MUR8100E ex 3863 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JW 16206 SCANSW ITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state-of-the-art SWITCHMODE bipolar power transistors. They are specifically designed for use in horizontal deflection	OCR Scan	PDF	MJW16206 MJF16206 AN1040. TP12N10 je210 desaturation design 1200 volt npn MPF930 MTP8P10 MUR8100E ex 3863
MMBF112L Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211 Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty	OCR Scan	PDF	06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

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MPF930 Price and Stock

Motorola Semiconductor Products MPF930

MPF930 Datasheets (10)

MPF930 Datasheets Context Search

MPF930A

MPF960 equivalent

Untitled

MPF960

2N5337

*e13007

EQUIVALENT FOR mjf18004

02D2G

221D

18004D2

221D

BUL44

MTP8P10

tip122 tip127 audio amp schematic

221D

221D

BC337 BC547

PF960

F930

TO-226-AE

motorola mpf990

F930

TP12N10

MMBF112L