T0236AB Search Results

MARKING bs170

Contextual Info: A pril 1995 National Semiconductor” BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Deccription Features These N-channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products

BFR540C

Contextual Info: SO T2 3 BFR540 NPN 9 GHz wideband transistor Rev. 6 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits   

transistor marking ra

Contextual Info: MMBF170LT1 CASE 318-07, STYLE 21 SOT-23 T0-236AB M AXIM UM RATINGS Rating Symbol Value Unit D ra in -S o u rce V o lta g e VD SS 60 Vdc D ra in G a te V o lta g e Vd g s 60 V dc G a te -S o u rce V olta g e — C o n tin u o u s - N o n -re p e titive <tp $ 50 /is)

226AA

Abstract: T0-226AA T0236AB T0226AA
Contextual Info: Sm all-Signal Small-Signal DMOS Transistors % T0-236AB SOT-23 T0-226AA (TO-92) 219

marking 1d4

Contextual Info: DUAL ZENER DIODES COMMON ANODE, 300mW AZ23 SERIES CASE TYPE; T0-236AB (SOT-23) % Dynamic Resistance Zener Voltage*1* at lz - 5 m A Reverse Voltage at Ir = 100 nA VzV at lz = 5mA t = 1 kHz rg o D1 2.5 . 2.9 7 5 (<83) <500 - 9 . . -4 AZ23-C3 D2 2.8 . 3.2

bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30

MV2107

Abstract: MV2105* equivalent MMBV2109LT1 equivalent 4j diode MV2113 diode mv2105 MMBV2101LT1 MMBV2104 MV2103 MMBV2103LT1
Contextual Info: SILICON EPICAP DIODES . designed in the popular PLASTIC PA C KAG E for high volum e require­ ments of F M Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diodes BAT54LT1 These Schottky barrier diodes are designed tor high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and

MBT5551LT1

Abstract: MBT5551L T0236AB
Contextual Info: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA High V oltage T ransistors NPN Silicon MMBT5550LT1 MMBT5551LT1* COLLECTOR 3 ‘M otorola Preferred D evice 2 MAXIMUM RATINGS EMITTER Symbol Value Unit Collector-Emitter Voltage Rating v C EO 140 Vdc Collector-Base Voltage

npd5564

Abstract: 2N4393 MOTOROLA 2sk194 2sk162 KE4393 2SK146 2sk162 hitachi 2SK147 NPD5566 FET package TO-71
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) g,. VGS(Off) Min (S) Max Max (V) lass Max (A) Clsa Max (F) PD Max (W) Derate at (WrC) Toper Max (OC) Package Style N-Channel JFETs, (Cont'd) 5 10 2SK364 2SK366 2SK240 2SK431 2SK170 UC704

KBL 103

Abstract: D0214AB D0-218AA D0218 T0263AB
Contextual Info: CASEDRAWINGS i\ i C NGi j i\j o i :c 0.034 0.86 0.028(0.71} DIA “T 0 .2 AC, :e i AM.y. 4 W ' t . I.sad ammeter is 0-026(0.66) tc -su fix't 0-023 (0 58) D0-2Q1AD -213AA (GL34) DQ-204AC (DO-15) H DQ-204AL (DO-41) D 0-213AB (GL41) 99 M D0-2Q4AP D 0-214AA (SMB)

DO-219

Abstract: d0214ac D0-214AC D0214AC SMA D0204AL 204AL
Contextual Info: INTRODUCTION TO ZEN ER DIODES General S em iconductor's Zener Diodes are used as voltage regulators, voltage references and voltage suppressors against ESD threats. Pow er ratings range from 30 0m W to 2W and voltages range from 2.4V to 200V. Typical voltage tolerances are +5%, but tighter tolerances such as ±2% are available. These diodes are available in the

153 SOT23

Contextual Info: ZENER DIODES 350mW BZX84 SERIES CASE TYPE: T0-236AB (SOT-23) % Type Marking Ze n e r V o lta g e !1 1 at D yn a m ic resistance at T e m p , coeffi­ cient of Ze n e r Vo ltag e at In In In V rV rzj i i avz i H / K Test current D yn a m ic resistance at

BT2369A

Contextual Info: MAXIM UM RATINGS Sym bol V a lu e Unit C o lle c to r -E m itte r V o lta g e Rating v CEO 15 Vdc C o lle c to r -E m itte r V o lta g e V CES 40 Vdc C o lle c to r-B a s e V o lta g e V cBO 40 Vdc E m itte r-B a s e V o lta g e Vebo 4.5 Vdc !C 200 m Adc Symbol

1N52xx

Abstract: D0204AL T0-236AB D0-204Al T0236AB 204AL
Contextual Info: ZENER DIODE SERIES SUMMARY Pmn Device Package mW Zener Voltage Tolerances Zener Voltage Range (Volts) 10% 8% 3% Page 2% AZ23-yxx * T0-236AB (SOT-23) 2.4 . 51 C 64 DZ23-yxx * * TO-236AB (SOT-23) 2.4 . 51 C 72 MMBZ52xxy T0-236AB (SOT-23) 2.4 . 75 B C

D0213AA

Abstract: D0204AL G3-64 DO-218AA D0-213AA DO-213AB MELF ITO-22QAB SMA DO-214AB MPG06 T0226AA
Contextual Info: C£ L >G e n e r a l v S e m ic o n d u c t o r PRODUCTPACKAGES . * % TO-22QAC TQ-220AB IT0-22QAC ITO-22QAB 10-263 D;i PAK .x« isUiilJS KBPM GBPC - W . GBPC T0-247AD GB1 wmm$& ^ % DFS % DO-218AA x ASC 00 DO-215AA (SMBG) 00-21 SAB (SMCG) •SPSSiM •

Contextual Info: MAXIMUM RATINGS Symbol Value Unit C o lle cto r-E m itte r V o ltage v CEO 12 Vdc Collector-B ase Voltage VCBO 20 Vdc 'c 100 m A dc Rating C o lle ctor C u rrent — C o n tin u o u s BSV52LT1 CASE 318-07, STYLE 6 SOT-23 T0-236AB THERMAL CHARACTERISTICS

all transistor data sheet

Abstract: free download transistor data sheet zo 103 ma CATV amplifier transistor transistor equivalent table RF NPN POWER TRANSISTOR 2.5 GHZ philips satellite systems common emitter amplifier all ic data common collector amplifier circuit designing
Contextual Info: BFR540 NPN 9 GHz wideband transistor Rev. 05 — 1 September 2004 Product data sheet 1. Product profile 1.1 General description The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ High power gain