MMT3905 Search Results

Contextual Info: MMT3905 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain.

diode 701

Abstract: MMT3960A MMT3905 MMCM3905 MMCM3906 MMCM3960A MMD6050 MMD70 MMT3960
Contextual Info: MMCM3905, MMCM3906 silicon (ceramic package) For Specifications, See MMT3905 Data. MMCM3960A (SILICON) (CERAMIC PACKAGE) For Specifications, See MMT3960A Data. MMD70 (SILICON) MICROMINIATURE SILICON EPITAXIAL SWITCHING DIODE SILICON EPITAXIAL SWITCHING DIODE

MMT3906

Abstract: MMT3903 MMT3904 MMT3905
Contextual Info: j SC -CDIODES/OPTOJ 6367255 34 MOTOROLA SC DE I h3t,72S5 34C <D I O D E S / O P T O DQ3Ö22Ü 38228 D T-3/~ n MiCRO-T continued) MMT3905.06 - pnp GENERAL PURPOSE TRANSISTORS • designed for general purpose switching and amplifier applications and for complementary circuitry with NPN types

MMT3906

Contextual Info: M O T O R O L A SC -CDIODES/OPTO} 6367255 MOTOROLA SC DE I h3ti7ESS Q Q 3 0 2 B Û <D I O D E S / O P T O 34C 38228 D t- 3 t ~ n MiCRO-T continued) MMT3905.06 - pnp GENERAL PURPOSE TRANSISTORS • designed for general purpose switching and amplifier applications and for complementary circuitry with NPN types

MMCM3905

Abstract: MMCM3906 MMT3903 MMT3904 MMT3905 MMT3906 si109
Contextual Info: M M T 3 9 0 5 , M M M C M M 3 9 0 5 , SILICON T 3 9 0 6 M M C M 3 9 0 6 ( c e r a m ic p a c k a g e ) MICRO-T PNP SILICO N A N N U LA R P N P S IL IC O N S W IT C H IN G A N D A M P L IF IE R T R A N S IS T O R S T R A N SISTO R S . . . designed for general purpose switching and amplifier applications

2N5227

Abstract: 2N3905 MOTOROLA MPS3906 mmt3905 2n995 mm3906 MPS5139 SILICON DICE motorola
Contextual Info: MOTOROLA SC -CDIODES/OPTO} 6367255 - MOTOROLA ~34 SC D E ~ | b ib 7 a 5 5 <D I O D E S / O P T O 3<tC SILICON SMALL-SIGMAL TRANSISTOR DICE continued) □ □ 3 7 CH 3 □ 37993 T - 3 7 - tsr^ 2C3906 DIE NO. — PNP LINE SOURCE — DMB155 This die provides performance similar to that of the following device types:

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

611 motorola

Abstract: MMT3903 MMT3904 MMT3905 MMT3906
Contextual Info: motorola sc 34 -c d i o d e s / o p t o ï 6367255 MOTOROLA SC ßF|b3t,7SSS DIODES/OPTO 34C GOBflSab t, 38226 M ICR O -T (continued) D 7 " " 3 / -'7 " 7 MMT3903,04 — n pn GENERAL PURPOSE TRANSISTORS • designed for general purpose switching and amplifier

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

wiring diagram audio amplifier ic 6283

Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor

BF681

Abstract: BF272 BF272A BC116 KT361G BF679 BFR38 KT361E BF509 LOW-POWER SILICON PNP
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 30 ~~~~~ +~~~~~~~EFC BFR38 BFR38 BF516 BF272A BF272A BF272S BF970A BF970A MPS4248 MPS4248 IMBT3905 2SA523A 2N2904 2N2906 PN2904 SF220 NthAmerSemi Semelab NthAmerSemi SGS•Ates NthAmerSemi