MOS20 Search Results
MOS20 Price and Stock
NXP Semiconductors SL2MOS2001DV,118RFID I.CODE MOD MOA2 PLLMC |
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SL2MOS2001DV,118 | Reel |
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Microchip Technology Inc MOS-2033-1+ |
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MOS-2033-1+ | 1,738 |
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MOS20 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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H01N45AContextual Info: HI-SINCERITY Spec. No. : MOS200408 Issued Date : 2004.11.01 Revised Date : 2005.03.10 Page No. : 1/4 MICROELECTRONICS CORP. H01N45A H01N45A Pin Assignment 3-Lead Plastic TO-92 Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: Source N-Channel Power Field Effect Transistor |
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MOS200408 H01N45A H01N45A 183oC 217oC 260oC | |
mosfet y1
Abstract: MOSFET MARK y2 mosfet k 61 y1 TL 434 H3055LJ Y2 MARKING
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MOS200606 H3055LJ H3055LJ O-252 V-10V) 200oC 183oC 217oC 260oC 245oC mosfet y1 MOSFET MARK y2 mosfet k 61 y1 TL 434 Y2 MARKING | |
03n60
Abstract: H03N60 H03N60E H03N60F transistor 100A 3N60
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MOS200602 H03N60 O-220AB 200oC 183oC 217oC 260oC 245oC 10sec 03n60 H03N60E H03N60F transistor 100A 3N60 | |
H2N7002Contextual Info: HI-SINCERITY Spec. No. : MOS200405 Issued Date : 1994.01.25 Revised Date : 2005.09.21 Page No. : 1/5 MICROELECTRONICS CORP. H2N7002 H2N7002 Pin Assignment & Symbol 3 N-Channel MOSFET 60V, 0.2A 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain |
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MOS200405 H2N7002 H2N7002 OT-23 183oC 217oC 260oC | |
H2302NContextual Info: HI-SINCERITY Spec. No. : MOS200836 Issued Date : 2008.03.06 Revised Date : 2008.03.06 Page No. : 1/7 MICROELECTRONICS CORP. H2302N H2302N Pin Assignment & Symbol 3 N-Channel Enhancement-Mode MOSFET 20V, 2.4A 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain |
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MOS200836 H2302N H2302N OT-23 260oC 10sec | |
H2N7002Contextual Info: HI-SINCERITY Spec. No. : MOS200503 Issued Date : 2005.04.01 Revised Date : 2009.10.09 Page No. : 1/5 MICROELECTRONICS CORP. H2N7002 N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. SOT-23 Absolute Maximum Ratings Drain-Source Voltage . 60 V |
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MOS200503 H2N7002 OT-23 183oC 217oC 260oC H2N7002 | |
H02N65
Abstract: H02N60E H02N60F h02n
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MOS200910 H02N65 O-220AB 183oC 217oC 260oC 245oC 10sec H02N60E H02N60F h02n | |
*07n60
Abstract: mosfet 600v 10a to-220ab H07N60 H07N60E H07N60F marking code diode 648
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MOS200604 H07N60 O-220AB 183oC 217oC 260oC 10sec H07N60E, *07n60 mosfet 600v 10a to-220ab H07N60E H07N60F marking code diode 648 | |
rf630
Abstract: HIRF630 HIRF630F
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MOS200401 HIRF630 HIRF630F O-220AB O-220FP 183oC 217oC 260oC HIRF630, rf630 HIRF630F | |
mosfet 2g2
Abstract: H9926CTS H9926TS mark 6A N-channel code TS
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MOS200513 H9926TS H9926CTS V-10V) H9926CTS 183oC 217oC 260oC 245oC mosfet 2g2 mark 6A N-channel code TS | |
40N03
Abstract: 40n0 H40N03E
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MOS200517 H40N03E H40N03E O-220AB o50oC 200oC 183oC 217oC 260oC 245oC 40N03 40n0 | |
H9926CS
Abstract: H9926S
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MOS200508 H9926S H9926CS V-10V) H9926CS 200oC 183oC 217oC 260oC | |
MOSFET MARK y2
Abstract: H01N60S H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1
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MOS200501 H01N60S 200oC 183oC 217oC 260oC 245oC H01N60SI, H01N60SJ MOSFET MARK y2 H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1 | |
H9435SContextual Info: HI-SINCERITY Spec. No. : MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9435S • P-Channel Enhancement-Mode MOSFET -30V, -5.3A 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment Features |
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MOS200509 H9435S H9435S Un150oC 200oC 183oC 217oC 260oC 245oC | |
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Contextual Info: HI-SINCERITY Spec. No. : MOS200810 Issued Date : 2008.12.31 Revised Date : Page No. : 1/6 MICROELECTRONICS GROUP. H3401N H3401N Pin Assignment & Symbol 3 P-Channel Enhancement Mode Field Effect Transistor 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain |
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MOS200810 H3401N H3401N OT-23 183oC 217oC 260oC 10sec | |
02n60
Abstract: all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60 H02N60E
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MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 02n60 all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60E | |
Contextual Info: HI-SINCERITY Spec. No. : MOS200836 Issued Date : 2008.03.06 Revised Date : 2008.03.06 Page No. : 1/6 MICROELECTRONICS CORP. H2301N H2301N Pin Assignment & Symbol P-Channel Enhancement-Mode MOSFET -20V, -2.2A 3 1 3-Lead Plastic SOT-23 Package Code: P Pin 1: Gate 2: Source 3: Drain |
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MOS200836 H2301N H2301N OT-23 183oC 217oC 260oC 10sec | |
Contextual Info: HI-SINCERITY Spec. No. : MOS200808 Issued Date : 2008.11.12 Revised Date :2008,12,30 Page No. : 1/5 MICROELECTRONICS CORP. H4946 Series 8-Lead Plastic DIP-8 Package Code: P N-CHANNEL ENHANCEMENT MODE POWER MOSFET 60V, 5A 8 Features • • RDS(on)<41mΩ@VGS=10V, ID=5.0A |
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MOS200808 H4946 H4946DS 183oC 217oC 260oC H4946DS H4946DP 10sec | |
mosfet 600v 10a to-220ab
Abstract: h10n60 n-CHANNEL POWER MOSFET 600v mosfet vgs 5v RD32 "MOSFET "600V 10A
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MOS200902 H10N60 O-220AB O-220FP) 183oC 217oC 260oC mosfet 600v 10a to-220ab n-CHANNEL POWER MOSFET 600v mosfet vgs 5v RD32 "MOSFET "600V 10A | |
Contextual Info: HI-SINCERITY Spec. No. : MOS200613 Issued Date : 2006.07.01 Revised Date : 2006.07.12 Page No. : 1/4 MICROELECTRONICS CORP. H2302N H2302N Pin Assignment & Symbol 3 N-Channel Enhancement-Mode MOSFET 20V, 2.4A 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain |
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MOS200613 H2302N H2302N OT-23 183oC 217oC 260oC 10sec | |
mosfet y1
Abstract: MOSFET MARK y2 mosfet k 61 y1 y2 marking TL 434 mosfet sn60 ultra low idss H-3055
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MOS200702 H3055MJ H3055MJ O-252 V-10V) 10sec mosfet y1 MOSFET MARK y2 mosfet k 61 y1 y2 marking TL 434 mosfet sn60 ultra low idss H-3055 | |
H12N60F
Abstract: H-10N h12n60 H10N60F mosfet p 30v 60a
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MOS200902 H12N60F O-220FP) H12N60F H10N60F Discre60 183oC 217oC 260oC H-10N h12n60 mosfet p 30v 60a | |
H9435S
Abstract: h4422 H9435 H943
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MOS200907 H4422S H4422S 183oC 217oC 260oC 245oC H9435S h4422 H9435 H943 | |
H2305
Abstract: MOSFET 20V 45A mark tp sot23
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MOS200807 H2305N H2305N OT-23 OT-23 183oC 217oC 260oC 10sec H2305 MOSFET 20V 45A mark tp sot23 |