MR18R1624 Search Results

DRAM material declaration

Contextual Info: MR16R1624 8/G EG0 MR18R1624(8/G)EG0 Change History Version 0.1 (December 2003) - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004

SAMSUNG MR18R162GMN0

Abstract: A76 MARKING CODE MR18R162GMN0-CK8
Contextual Info: MR16R1624 6/8/C/G MN0 MR18R1624(6/8/C/G)MN0 Change History Version 0.9 (January 2000) - Preliminary * First copy. * Based on the 1.02ver 128/144Mbit RDRAMs base RIMM Datasheet Version 1.0 (October 2000) - Preliminary * Based on the 1.0ver Rambus 256/288Mb RDRAMs base RIMM datasheet

357mhz

Contextual Info: MR18R1624 6/8/C/G MN0 RAMBUS MODULE SERIAL PRESENCE DETECT RIMM SPD Specification based on 288M RDRAM(M-die, 32s banks) Version 1.1a November 2000 Change History Version 1.1 (Oct. ′00) Based on the Direct RambusTM SPD Specification 1.1. Version 1.1a (Nov. ′00)

b58 468

Abstract: B58 608
Contextual Info: MR16R1624 8/G EG0 MR18R1624(8/G)EG0 Change History Version 0.1 (December 2003) - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004

B58 608

Abstract: marking code B38
Contextual Info: MR16R1624 8/G EG0 MR18R1624(8/G)EG0 Preliminary Change History Version 0.1 (December 2003) - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet Page 0 Version 0.1 Dec. 2003 MR16R1624(8/G)EG0 MR18R1624(8/G)EG0

marking a86

Abstract: transistor MN1 DATA SHEET transistor MN1
Contextual Info: MR16R1624 6/8 MN1 MR18R1624(6/8)MN1 Change History Version 1.1 (March 2000) * First copy. * Based on the 1.02ver 128/144Mbit RDRAMs base RIMM Datasheet -Only 4/6/8d RIMM are using 6layer PCB. Page 0 Version 1.1 Mar. 2001 MR16R1624(6/8)MN1 MR18R1624(6/8)MN1

MR18R162GMN0-CK8

Contextual Info: Preliminary MR18R1624 6/8/C/G MN0 TM 4/6/8/12/16d RIMM Module with 288Mb RDRAMs Revision History Version 0.9 (January 2000) - Preliminary - First copy. - Be derived from the 1.02ver 128/144Mbit RDRAM Datasheet Page 0 Rev.0.9 Jan. 2000 Preliminary MR18R1624(6/8/C/G)MN0

Contextual Info: MR18R1624 6/8 MN1 RAMBUS MODULE SERIAL PRESENCE DETECT RIMM SPD Specification based on 288M RDRAM(M-die, 32s banks) Version 1.11 January 2001 Change History Version 1.1 (Oct. ′00) Based on the Direct RambusTM SPD Specification 1.1. Version 1.1a (Nov. ′00)

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

RISC-Processor s3c2410

Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH

Contextual Info: MR16R1622 4/8/G AF0 MR18R1622(4/8/G)AF0(1) Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RDRAMs base RIMM Datasheet Version 1.2 (February 2002) * Add 1066-35 binning Version 1.3 (April 2002) * Add 800-40 and 1066-32 binning

MR16R1624AF0-CM8

Abstract: PC800 K4R571669A-FCK8 K4R571669A-FCM8 K4R881869A-FCK8 K4R881869A-FCM8 MR16R1622AF0-CM8 MR16R1628AF0-CM8 MR16R162GAF0-CK8 MR16R1628AF0-CK8
Contextual Info: B • d - r - d" Technical Notification ♦ RDRAM Product planning Team a .m.2002 K4R571669A-FCM8/ K4R881869A-FCM8 vs. K4R571669A-FCK8/ K4R881869A-FCK8 The only differnce between xxx-FCK8 and xxx-FCM8 is tRCD parameter value. xxx-FCM8's tRCD is 7 clks while xxx-FCK8's tRCD is 9 clks.

MR16R1622

Abstract: MR18R1624AF1-CN9 MR18R1624AF1-CT9 MR18R1628AF1-CT9
Contextual Info: MR16R1622 4/8/G AF0 MR18R1622(4/8/G)AF0(1) Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RDRAMs RIMM Datasheet Version 1.2 (February 2002) * Add 1066-35 binning Version 1.3 (April 2002) * Add 800-40 and 1066-32 binning

K5W1G

Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
Contextual Info: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION

Contextual Info: MR16R1622 4/8/G AF0 MR18R1622(4/8/G)AF0(1) Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RDRAMs base RIMM Datasheet Version 1.2 (February 2002) * Add 1066-35 binning Version 1.3 (April 2002) * Add 800-40 and 1066-32 binning