357MHZ Search Results

Contextual Info: MR16R0824 6/8/C/G AN1 RAMBUS MODULE SERIAL PRESENCE DETECT RIMM SPD Specification based on 128M RDRAM(B-die, 32s banks) Version 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 128M RDRAM (A-die) SPD Specification 1.02 version.

K7D803671B-HC33

Abstract: K7D803671B-HC30 K7D801871B-HC35 K7D801871B-HC37 K7D803671B K7D803671B-HC25 K7D803671B-HC35 K7D803671B-HC37
Contextual Info: K7D803671B K7D801871B 256Kx36 & 512Kx18 SRAM Document Title 8M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 -Initial document. July. 2000 Advance Rev. 0.1 -ZQ tolerance changed from 10% to 15% Aug. 2000 Advance Rev. 0.2

circuit of rowa television

Abstract: toshiba b54
Contextual Info: TOSHIBA TH M R2E2Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 18-BIT 64M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2E2Z is a 33,554,432-word by 18-bit direct rambus dynamic RAM module consisting of 2 TC59RM818MB Direct Rambus DRAMs on a printed circuit board.

Contextual Info: THMR2N16-6/-7/-8 TOSHIBA TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 268,435,456-WORD BY 16-BIT 512M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2N16 is a 268,435,456-word by 16-bit direct rambus dynamic RAM module consisting of 16 TC59RM816MB and Direct Rambus DRAMs on a printed circuit board.

Contextual Info: TOSHIBA TH M R2 E4Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 18-BIT 128M Bytes Direct Rambus D RAM MODULE DESCRIPTION The THMR2E4Z is a 67,108,864-word by 18-bit direct rambus dynamic RAM module consisting of 4 TC59RM818MB Direct Rambus DRAMs on a printed circuit board.

S 357

Abstract: GS815018AB-250 GS815018AB-300 GS815018AB-333 GS815018AB-357
Contextual Info: Product Preview GS815018/36AB-357/333/300/250 119-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 250 MHz–357 MHz 2.5 V VDD HSTL I/O Features Functional Description • Register-Register Late Write mode, Pipelined Read mode

Contextual Info: Product Preview GS815018/36AB-357/333/300/250 119-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 250 MHz–357 MHz 2.5 V VDD 1.5 V or 1.8 V HSTL I/O Features Functional Description • Register-Register Late Write mode, Pipelined Read mode

GS8150V36AB-300I

Abstract: GS8150V36AB-250I GS8150V36AGB-357 8150VXXA
Contextual Info: GS8150V36AB-357/333/300/250 119-Bump BGA Commercial Temp Industrial Temp 512K x 36 18Mb Register-Register Late Write SRAM 250 MHz–357 MHz 1.8 V VDD 1.5 V or 1.8 V HSTL I/O Features Functional Description • Register-Register Late Write mode, Pipelined Read mode

64H40

Abstract: circuit of rowa television CM05
Contextual Info: TOSHIBA TH M R2 N8Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 134,217,728-WORD BY 16-BIT 256M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2N8Z is a 134,217,728-word by 16-bit direct rambus dynamic RAM module consisting of 8 TC59RM816MB Direct Rambus DRAMs on a printed circuit board.

DGA4

Abstract: loqb 47KQ B23A B85A Toshiba Rambus IC
Contextual Info: TOSHIBA THMR2N2Z-6/-7/-8 T O SH IBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 33,554,432-W ORD BY 16-BIT 64M Bytes Direct Rambus D R A M M O D U LE DESCRIPTION The THMR2N2Z is a 33,554,432-word by 16-bit direct rambus dynamic RAM module consisting of 2

Contextual Info: GS815018/36AB-357/333/300/250 119-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 250 MHz–357 MHz 2.5 V VDD 1.5 V or 1.8 V HSTL I/O Features Functional Description • • • • • • • • • •

cmos book

Contextual Info: 2 5 6 M /2 8 8 M -b it b a s e d R IM M HYMR2xxx16 18 H with 256/288Mb RDRAMs PRELIMINARY O v e rv ie w K e y T im in g P a ra m e te rs /P a rt N u m b e rs T h e R a m b u s R I M M m o d u le is a g e n e ra l p u r p o s e T h e f o llo w in g t a b le lis ts th e f r e q u e n c y a n d la te n c y b in s

Contextual Info: MR18R0824 6/8/C/G BN1 RAMBUS MODULE SERIAL PRESENCE DETECT RIMM SPD Specification based on 144M RDRAM(B-die, 32s banks) Verion 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 144M RDRAM (A-die) SPD Specification 1.02 version.

357mhz

Contextual Info: MR18R1624 6/8/C/G MN0 RAMBUS MODULE SERIAL PRESENCE DETECT RIMM SPD Specification based on 288M RDRAM(M-die, 32s banks) Version 1.1a November 2000 Change History Version 1.1 (Oct. ′00) Based on the Direct RambusTM SPD Specification 1.1. Version 1.1a (Nov. ′00)

Contextual Info: GS815018/36AB-357/333/300/250 119-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 250 MHz–357 MHz 2.5 V VDD 1.5 V or 1.8 V HSTL I/O Features Functional Description • Register-Register Late Write mode, Pipelined Read mode

Contextual Info: KMMR16R84 6/8/C/G AC1 RAMBUS MODULE SERIAL PRESENCE DETECT SPD Specification For 128M RDRAM(2nd Gen.) based RIMM REV. 1.03 February 2000 Revision History Revision 1.0 (June ′99) It is based on the RAMBUS SPD Specification 1.0 version. Revision 1.01 (Oct. ′99)

Contextual Info: KMMR18R84 6/8/C/G AC1 RAMBUS MODULE SERIAL PRESENCE DETECT SPD Specification For 144M RDRAM(2nd Gen.) based RIMM REV. 1.03 February 2000 Revision History Revision 1.0 (June ′99) It is based on the RAMBUS SPD Specification 1.0 version. Revision 1.01 (Oct. ′99)

A23 851 diode

Abstract: B92 diode A79 marking code transistor marking A21 marking .A55 marking code ADH a74 marking code A84 diode b78 board 9535H
Contextual Info: TM RIMM Module with 256/288Mb RDRAMs Preliminary Revision History * Rev. 0.95 Date : 2001.07.23 1. Page2, 7, 8, 10, 12 : Add 2D RIMM part Rev. 0.95 / July.01 1 TM RIMM Module with 256/288Mb RDRAMs Preliminary Overview Key Timing Parameters/Part Numbers The‘Rambus RIMMTM module is a general purpose

GS8150V18AB-250

Abstract: GS8150V18AB-300 GS8150V18AB-333 GS8150V18AB-357
Contextual Info: GS8150V18/36AB-357/333/300/250 119-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 250 MHz–357 MHz 1.8 V VDD 1.5 V or 1.8 V HSTL I/O Features Functional Description • Register-Register Late Write mode, Pipelined Read mode

Contextual Info: MR16R0824 8 AM0 RAMBUS MODULE SERIAL PRESENCE DETECT Mirrored RIMM SPD Specification based on 128M RDRAM(A-die, 32s banks) Version 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 128M RDRAM (A-die) Normal RIMM SPD Specification 1.02 version.

672047

Abstract: 1472181 RF-12A 35278 435013 AB-190 AN-181 BUF600 OPA660 low-pass Passive filter design
Contextual Info: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132

sda 2087 N

Abstract: trac 40800 dram memory module 1993 marking code b35 HME DRAM 1616 marking B44
Contextual Info: Direct Rambus RIMM with 128/144Mbit RDRAMs Preliminary Overview Key Timing Parameters/Part Numbers The Rambus RIMMTM module is a general purpose highperformance memory subsystem suitable for use in a broad range of applications including computer memory, personal

a40 5pin

Abstract: 64mx16 THMRL LDQB 5pin
Contextual Info: TO SHIBA THMR1N8E-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 16-BIT 128M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR1N8E is a 67,108,864-word by 16-bit direct rambus dynamic RAM module consisting of TC59RM716MB Direct Rambus DRAMs on a printed circuit board.

Contextual Info: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 374.0MHz Part No: MP03699 Model: TB0530A Rev No: 1 A. MAXIMUM RATING: 1. Operating Temperature: -40°C ~ +85°C