Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MRF7S35120HS Search Results

    SF Impression Pixel

    MRF7S35120HS Price and Stock

    NXP Semiconductors MRF7S35120HSR3

    Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical MRF7S35120HSR3 105 1
    • 1 $177.12
    • 10 $177.12
    • 100 $177.12
    • 1000 $177.12
    • 10000 $177.12
    		Buy Now

    MRF7S35120HS Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF7S35120HSR3 Freescale Semiconductor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Original PDF
    MRF7S35120HSR5 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, MOSFET RF N-CH 120W NI-780S Original PDF

    MRF7S35120HS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 3, 6/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.


    Original     		PDF MRF7S35120HS MRF7S35120HSR3

    ATC100B3R3

    Abstract: AN1955 MRF7S35120HSR3 Header MTTF
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 3, 6/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.


    Original     		PDF MRF7S35120HS MRF7S35120HSR3 ATC100B3R3 AN1955 MRF7S35120HSR3 Header MTTF

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF7S35120HSR3 CRCW120651R0FKEA 32V500
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 1, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.


    Original     		PDF MRF7S35120HS MRF7S35120HSR3 A114 A115 AN1955 C101 JESD22 MRF7S35120HSR3 CRCW120651R0FKEA 32V500

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF7S35120HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 2, 11/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.


    Original     		PDF MRF7S35120HS MRF7S35120HSR3 A114 A115 AN1955 C101 JESD22 MRF7S35120HSR3

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original     		PDF te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H

    BA 7891 NG

    Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
    Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进


    Original     		PDF PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104

    MRF8P9040N

    Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial


    Original     		PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    6 pin TRANSISTOR SMD CODE CAA

    Abstract: TEA6721 BF991 spice model
    Text: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、


    Original     		PDF