CRCW120651R0FKEA Search Results

Contextual Info: T1G4012036-FS 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 3, 6/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

b0912

Contextual Info: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

Contextual Info: T2G6003028-FS 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •

ATC100B3R3

Abstract: AN1955 MRF7S35120HSR3 Header MTTF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 3, 6/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

ATC600S10

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth

A114

Abstract: A115 AN1955 C101 JESD22 MRF7S35120HSR3 CRCW120651R0FKEA 32V500
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 1, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

ATC600S3R0

Abstract: ATC600S0R3 ATC600S0R2 37C0064
Contextual Info: T1G6003028-FL 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

ATC600S2R7BT250XT

Abstract: ATC600S0R5BT250XT ATC600S1R0BT250XT MRF8P20165WHS ATC600S1R0BT ATC600S0R6BT250XT ATC600S100JT250XT ATC600F0R1BT250XT ATC600S1R5BT250XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth

CRCW060333R0FKEA

Abstract: 70201152 CRCW08054K70FK CRCW0603604RFKEA CRCW08054K70FKEA CRCW08050000Z0EA CRCW06031K62FKEA CRCW08054K99FKEA crcw0603511rfkea CRCW0805330RFK
Contextual Info: 1872-2012.qxp:QuarkCatalogTempNew 9/10/12 2:56 PM Page 1872 INTERCONNECT TEST & MEASUREMENT 23 Thick Film Chip Resistors CRCW Series — Thick Film, Rectangular Chip Resistors RoHS ᭤ Metal Glaze on High Quality Ceramic ᭤ Protective Overglaze ᭤ Solder Contacts on Ni Barrier Layer

ATC600S0R

Contextual Info: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

Contextual Info: T1G6003028-FL 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

Contextual Info: T1G6003028-FL 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • 1 1 Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers 1 1 Product Features1

Contextual Info: T2G6003028-FS 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •

Contextual Info: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • 1 1 Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers 1 1 Product Features1

A114

Abstract: A115 AN1955 C101 JESD22 MRF7S35120HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 2, 11/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

Contextual Info: T2G6003028-FL 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •

Contextual Info: T1G4012036-FL 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

Contextual Info: T2G6003028-FL 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •

Contextual Info: T1G4012036-FS 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers