MTP10N10 Search Results

AN569

Abstract: MTP10N10EL
Contextual Info: MTP10N10EL Preferred Device Power MOSFET 10 Amps, 100 Volts, Logic Level N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for

Contextual Info: MTP10N10E Preferred Device Power MOSFET 10 Amps, 100 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers drain−to−source diodes with fast recovery times. Designed for

Contextual Info: MOTOROLA Order this document by MTP10N10EL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP10N10EL Logic Level TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high

MTP10N10ELG

Abstract: AN569 MTP10N10EL
Contextual Info: MTP10N10EL Preferred Device Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

2N3904

Abstract: AN569 MTP10N10E
Contextual Info: MOTOROLA Order this document by MTP10N10E/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTP10N10E TMOS IV Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced “E” series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and commutation

MTP10N10E

Abstract: 2N3904 AN569
Contextual Info: MTP10N10E Preferred Device Power MOSFET 10 Amps, 100 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers drain–to–source diodes with fast recovery times. Designed for

Contextual Info: MTP10N10EL Preferred Device Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

MTP10N10M

Abstract: Current Mirror FET Motorola 3-326 transistor mosfet current mirror sensefet 25CC AN569 MC33034 MC34129 MM614
Contextual Info: MOTOROLA SC XSTRS/R F bêt D • fc,3b7254 DGTft 72G 771 « f lO T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP10N10M Advance Information P o w e r Field E ffe c t T ra n s is to r N-Channel Enhancement-Mode Silicon Gate w ith Current Sensing Capability

drive motor 10A with transistor P channel MOSFET

Abstract: IL 741 10A motor drive mosfet H bridge tl 741 50 Amp 100 volt fet 741 amp current to voltage converter using 741 ups high power FET Transistor data sheet AN569
Contextual Info: MTP10N10EL Preferred Device Power MOSFET 10 Amps, 100 Volts, Logic Level N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

539 MOTOROLA transistor

Abstract: AN569 MTP10N10EL mosfet transistor 400 volts.100 amperes motorola TL 741
Contextual Info: MOTOROLA Order this document by MTP10N10EL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Logic Level TMOS E-FET. Power Field Effect Transistor Designer's MTP10N10EL Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high

K 741 MOSFET

Abstract: MTP10N10ELG
Contextual Info: MTP10N10EL Preferred Device Power MOSFET 10 A, 100 V, Logic Level N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

UC3842B application

Abstract: uc3842b equivalent UC3843B UC3843 UCx84x 384xB
Contextual Info: UC3842B, UC3843B, UC2842B, UC2843B High Performance Current Mode Controllers The UC3842B, UC3843B series are high performance fixed frequency current mode controllers. They are specifically designed for Off−Line and DC−DC converter applications offering the designer a

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local

UC28450

Abstract: off-line flyback regulator uc3845 DC/DC converter UC3845
Contextual Info: UC3844, 45 UC2844, 45 MOTOROLA SEMICONDUCTOR mmmmmmmmmm TECHNICAL DATA HIGH PERFORMANCE CURRENT MODE CONTROLLER Advance Information High Performance Current Mode Controller The UC3844, UC3845 series are high perform ance fixed frequency current mode controllers. They are specifically designed for Off-Line and DC-to-DC c on­

Contextual Info: UC3842B, UC3843B, UC2842B, UC2843B High Performance Current Mode Controllers The UC3842B, UC3843B series are high performance fixed frequency current mode controllers. They are specifically designed for Off−Line and DC−DC converter applications offering the designer a

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2616F1D

Contextual Info: Order this document by MC34129/D MC34129 MC33129 High Performance Current Mode Controllers The MC34129/MC33129 are high performance current mode switching regulators specifically designed for use in low power digital telephone applications. These integrated circuits feature a unique internal fault timer

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

Contextual Info: Order this document by UC3844/D UC3844, 45 UC2844, 45 Advance Information High Performance Current Mode Controllers The UC3844, UC3845 series are high performance fixed frequency current mode controllers. They are specifically designed for Off–Line and dc–to–dc converter applications offering the designer a cost effective

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

mgb20n40cl

Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V
Contextual Info: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to

2616P-A100

Abstract: 685 35K 2616PA100 MC33129D 2616P EE 35 bobbin
Contextual Info: MC34129 MC33129 High Performance Current Mode Controllers The MC34129/MC33129 are high performance current mode switching regulators specifically designed for use in low power digital telephone applications. These integrated circuits feature a unique internal fault timer

2616F1D

Abstract: Ferroxcube 3C8 813E187-3C8 MTP10N10M 2n20l TL431AD MC34129P 813E187 AN976 MC1455
Contextual Info: Order this document by MC34129/D MC34129 MC33129 High Performance Current Mode Controllers The MC34129/MC33129 are high performance current mode switching regulators specifically designed for use in low power digital telephone applications. These integrated circuits feature a unique internal fault timer