MFL55 Search Results

Contextual Info: International 1*»] Rectifier Mfl55452 QQISbflE DMM • INR IRFR224 IRFU224 HEXFET Power MOSFET • • • • • • • PD-9.600A bSE D _ INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR224 Straight Lead (IRFU224)

IRFPC40

Abstract: 9511A IRFPC42 TIL 6N 139 SS452 MSS54
Contextual Info: OGGaaaa 5 | IN TE RN AT IO NAL R E C T I F I E R HE D | Data Sheet No. PD-9.511A Mfl55M52 T -S f-/.9 INTERNATIONAL RECTIFIER llORl REPETITIVE AVALANCHE AND dv/dt RATED IRFPC4Q IRFPC42 H E X F F P T R A N S IS T O R S N-CHANNEL POWER MOSFETs TÜ-247AC PACKAGE

Contextual Info: INTERNATIONAL RECTIFIER bSE D B Mfl55 4 5 2 G G 1 7 3 1 4 b35 PD-2.327 htemational ^Rectifier sdsi SCHOTTKY RECTIFIER 60 Amp Major Ratings and Characteristics Description/Features Characteristics SD51. Units lF AV Rectangular 60 A 35/45 V waveform V RRM

g598

Abstract: IRFH250 irfh260 A220 DLP 100-C 22E8 irfh25u 9411a G595
Contextual Info: HE 0 § Mfl554SE INTERNATIONAL 3 | Data Sheet No. PD-9.411A RECTIFIER I“ R INTERNATIONAL RECTIFIER T-39-13 HEXFET TRANSISTORS IRFHS50 N - C H A IN IIM E L M O S F E T s Features: 200 Volt, 0.090 Ohm HEXFET T he HEXFET® technology is the key to International

Contextual Info: INTERNATIONAL RECTIFIER bSE D • Mfl55i<5S 0G170bb ERG ■ INR PD-2.310 International I3»ëIRectifier s o w q o 3 f s o w q o 4 f SCHOTTKY RECTIFIER 5.5 Amp A VRHM 3Q/40 V ■fsm 470 A VF 5Apk,TJ-25°C 0.65 V Ti •40to125 °C • Popular D-PAK outline

Contextual Info: _ _ „ _ • international W Rectifier 4555452 G ü lb S H Üb3 ■ INR international rectifier ^se» s e rie s b4oa BACK TO BACK SCRs Power Modules 40A Features ■ G la s s p assivated junctions for greater reliability ■ Electrically isolated b a se plate 3500V RM S

Contextual Info: INTERNATIONAL RECTIFIER b5E D • MÖ55452 GD17Elb S27 M I N R PD-2.333 3o c p q o so International [?o r JRectifier 3 o c pq io o SCHOTTKY RECTIFIER 30 Amp Major Ratings and Characteristics Description/Features 30CPQ. Units lF AV Rectangular waveform 30

Contextual Info: PD - 9.1448C International IOR Rectifier IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: HE D I 4055452 G O G ^ a a | Data Sheet No. PD-9.513B INTERNATIONAL RECTIFIER _ INTERNATIONAL RECTIFIER I R T -39-23 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFAC30 IRFAC32

Contextual Info: International Tor ; Rectifier 4 fiS 5 4 5 B HEXFET Pow er M O S F E T IN T E R N A T IO N A L R E C T I F I E R • • • • • 0015154 b?5 PD-9.650A IN R IRFI730G Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm

EPS300

Contextual Info: 3 Related Products Tapes Insulating and Splicing Tapes 384 Mastic Sealing Tapes 385 Vinyl Electrical Tapes 386 All-Weather Protection Tapes 388 Specialty Tapes 389 Scotch Filament Tapes 391 Scotchlite Reflective Tapes 391 How to Search this Catalog This digital catalog provides you with two quick ways to find the products

IRFP460

Abstract: IRFP462 C558 c556 C555 C560 C557
Contextual Info: HE D | 4Û55M52 0GGÔÔÜ4 □ | Data Sheet No. PD-9.512A *r~ IN TER NAT IO NA L R E C T I F I E R INTERNATIONAL RECTIFIER Sf-s.tr IO R REPETITIVE AVALANCHE AND dv/dt RATED HEXFEFTRAIVISISTORS IRFP46S N-CHANNEL POWER MQSFETs TO-S47AC PACKAGE 500 Volt, 0.27 Ohm HEXFET

Contextual Info: INTERNATIONAL RECTIFIER 2bE D • T~ M A S S E S 0010751 3 ■ X C 3 R | IN T E R N A T IO N A L . R E C T I F IE R J 1 R23D SERIES 2600-2000 VOLTS RANGE 320 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS J x PA RT \ t NUMBS* : : l

Contextual Info: Data Sheet No. PD-6.085 International I R Rectifier IR 2 1 1 0 L 4 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

IRC530-007

Abstract: IRC530 international rectifier GTO 2A38 IRC630 IRC531 IRF531 IRC530-008 DIODE EG 83A I-10A
Contextual Info: HE D I MflSS4Sa GGDfliGM 3 | Data Sheet No. PD-9.454C T ? tz < / INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXSense —Current; Sense IRC530 C Series

International Rectifier IRF520

Contextual Info: International i«R Rectifier MÔ55452 0 0 m b 4 4 343 m i N R HEXFET Power MOSFET • • • • • • PD-9.313K IRF520 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling

MOSFET IRF150

Abstract: IRF150 MOSFET HA711
Contextual Info: HE 0 I 4055452 DGtnObb 5 | T-39-13 Data Sheet No. PD-9.305G I N T E R N A T IO N A L R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IOR IRF15Ü IRF151 IRF15S -Channel IRF153 Features: 100 Volt, 0.055 Ohm H EXFET The HEXFET technology is the key to International

2G25

Abstract: 10BB S250A DATA SHEET R38B14A
Contextual Info: ^.INTERNATIONAL RECTIFIER IO R in t e r n a t io n a l 73 D | 4Ö5S452 DDDTEfla 1 T ' ^ -2-3 Data Sheet No. PD-2.161 , r e c t if ie r R38B SERIES 1400-800 VOLTS RANGE 1670 AMP AVG HOCKEY PUK DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS PART NUMBER VBRH.' VR " V I

UL1385

Abstract: D243 D244 D245 IRKL1
Contextual Info: MÛ5SMS2 D01b71ô International IS Rectifier SERIES IRK.L131/132 NEW INT-A-pak Power Modules FAST RECOVERY DIODES INTERNATIONAL T17 • INR RECTIFIER bS E Features I Fast recovery time characteristics I Electrically isolated base plate Industrial standard package

IRFC9024

Abstract: CPY302F HEXFET Power MOSFET P-Channel 1000 V N-channel mosfet IRFC024 302F 60V Single N-Channel HEXFET Power MOSFET Scans-007982 HEXFET Characteristics
Contextual Info: INTERNATIONAL RECTIFIER bSE J> m 4055*452 Oülb'ÎD'l Ô7b • INR Data Sheet No. PD-5.015D International [^Rectifier HEXFET Power Module CPY302F 3-Phase Bridges Description/Features Product Summary The CPY302F HEXFET power module is intended for use in driving sub-fractional horsepower DC brushless

Contextual Info: ICS1712 Integrated Circuit Systems, Inc. QuickSaver Charge Controller for Nickel-Cadmium and Nickel-Metal Hydride Batteries_ General Description Features The ICS1712 is a CMOS device designed for the intelligent charge control of either nickel-cadmium NiCd or nickel-metal hydride (NiMH) batteries. The controller uses a pulsed-current charging technique together with voltage slope and/or

Contextual Info: P D 9.1573 International IOR Rectifier IRG4PH50UD PRELIMINARY INSULATED G A TE BIPOLAR TRANSISTOR WITH ULTRAFAST SO FT R EC O VER Y DIODE Features UltraFast CoPack IGBT • UltraFast: O ptim ized for high operating V ces = 1200V frequencies up to 40 kH z in hard switching,

SMD transistor k21

Contextual Info: International US Rectifier HEXFRED PD-2.381 Provisional Data Sheet HFA40HF60 ULTRA FAST, SOFT RECOVERY DIODE Features: — Ultrafast Recovery — Ultra Soft Recovery — Very Low Ir r m — Very Low Qrr — Guaranteed Avalanche — Specified at Operating Conditions

C818

Abstract: st c817 C817 st c816 C814 irgti050u06 c816
Contextual Info: International ÜH Rectifier PD-9.953B IRGTI050U06 "HALF-BRIDGE” IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KH z hard switching, or 1OOKHz resonant •Switching-Loss Rating includes all "tail"