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    IRF151 Price and Stock

    Rochester Electronics LLC IRF151

    N-CHANNEL POWER MOSFET
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    DigiKey IRF151 Bulk
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    New Jersey Semiconductor Products, Inc. IRF151

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    Bristol Electronics IRF151 8,495 1
    • 1 $13.2
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    • 100 $12.1836
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    Harris Semiconductor IRF151

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    Bristol Electronics IRF151 26
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    Rochester Electronics IRF151 272 1
    • 1 $1.63
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    Fairchild Semiconductor Corporation IRF151

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    Bristol Electronics IRF151 2 1
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    Quest Components IRF151 1
    • 1 $12
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    International Rectifier IRF151

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    Bristol Electronics IRF151 1
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    Quest Components IRF151 1
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    Rochester Electronics IRF151 204 1
    • 1 $1.63
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    • 100 $1.53
    • 1000 $1.39
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    Find more IRF151 price and stock on Findchips.com

    IRF151 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF151 Intersil 33A and 40A, 60V and 100V, 0.055 and 0.08 ?, N-Channel Power MOSFETs Original PDF
    IRF151 Fairchild Semiconductor N-Channel Power MOSFETs, 40 A, 60 V/100 V Scan PDF
    IRF151 FCI POWER MOSFETs Scan PDF
    IRF151 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF151 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF151 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. Scan PDF
    IRF151 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF151 International Rectifier TO-39 / TO-3 N-Channel HEXFET Power MOSFETs Scan PDF
    IRF151 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRF151 IXYS High Voltage Power MOSFETs Scan PDF
    IRF151 IXYS (IRF150 - IRF153) HIGH VOLTAGE POWER MOSFET DIE Scan PDF
    IRF151 IXYS High Voltage Power MOSFETs Scan PDF
    IRF151 Motorola European Master Selection Guide 1986 Scan PDF
    IRF151 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    IRF151 Motorola Switchmode Datasheet Scan PDF
    IRF151 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF151 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF151 Unknown FET Data Book Scan PDF
    IRF151 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF151 Unknown Basic Transistor and Cross Reference Specification Scan PDF

    IRF151 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF150

    Abstract: MOSFET IRF150 12V 40A voltage regulators IRF152
    Text: IRF150, IRF151, IRF152, IRF153 S E M I C O N D U C T O R 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 33A and 40A, 60V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF150, IRF151, IRF152, IRF153 TA17421. IRF150 MOSFET IRF150 12V 40A voltage regulators IRF152

    SN75447

    Abstract: IRF151 SN75374 SN75374D SN75374DR SN75374N TLC555
    Text: SN75374 QUADRUPLE MOSFET DRIVER SLRS028A − SEPTEMBER 1988 − REVISED NOVEMBER 2004 D Quadruple Circuits Capable of Driving D D D D OR N PACKAGE TOP VIEW High-Capacitance Loads at High Speeds Output Supply Voltage Range From 5 V to 24 V Low Standby Power Dissipation


    Original     		PDF SN75374 SLRS028A SN75374 SN75447 IRF151 SN75374D SN75374DR SN75374N TLC555

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    SN75447

    Abstract: IRF151 SN75374 TLC555 SLRS028
    Text: SN75374 QUADRUPLE MOSFET DRIVER SLRS028 – SEPTEMBER 1988 • • • • D OR N PACKAGE TOP VIEW Quadruple Circuits Capable of Driving High-Capacitance Loads at High Speeds Output Supply Voltage Range From 5 V to 24 V Low Standby Power Dissipation VCC3 Supply Maximizes Output Source


    Original     		PDF SN75374 SLRS028 SN75374 SN75447 IRF151 TLC555 SLRS028

    TLC555P

    Abstract: SN75447 IRF151 SN75372 SN75374
    Text: SN75372 DUAL MOSFET DRIVER SLLS025A – JULY 1986 • • • Dual Circuits Capable of Driving High-Capacitance Loads at High Speeds Output Supply Voltage Range up to 24 V Low Standby Power Dissipation D OR P PACKAGE TOP VIEW 1A E 2A GND description The SN75372 is a dual NAND gate interface


    Original     		PDF SN75372 SLLS025A SN75372 TLC555P SN75447 IRF151 SN75374

    IRF150 To220 package

    Abstract: irf150 to220 IRFP240 xg32 ULTRA FAST RECOVERY RECTIFIERS to-220 irf64d to-3p 1500V IRF122 IRF123 IRF131
    Text: FREDERICK COMPONENTS MIE 3> • 37n4ñS Q0D01b3 5 M F C I A CORTON CO M PA N Y C POWER MOSFETs P ART-N O IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF232


    OCR Scan     		PDF Q0D01b3 IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF150 To220 package irf150 to220 IRFP240 xg32 ULTRA FAST RECOVERY RECTIFIERS to-220 irf64d to-3p 1500V

    MOSFET IRF150

    Abstract: IRF150 MOSFET HA711
    Text: HE 0 I 4055452 DGtnObb 5 | T-39-13 Data Sheet No. PD-9.305G I N T E R N A T IO N A L R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IOR IRF15Ü IRF151 IRF15S -Channel IRF153 Features: 100 Volt, 0.055 Ohm H EXFET The HEXFET technology is the key to International


    OCR Scan     		PDF T-39-13 IRF15Ü IRF151 IRF15S IRF153 MOSFET IRF150 IRF150 MOSFET HA711

    Untitled

    Abstract: No abstract text available
    Text: rZ 7 ^TÆ, SGS-THOMSON Mffi iLlI gre©iO(gS IRF151 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 221 x221 mils Al A u /C r/N i/A u


    OCR Scan     		PDF IRF151

    IRF150

    Abstract: irf 151 IRF152 irf 150 IRF151
    Text: r z 7 SGS-THOMSON * JÆ. M g @ii[L[I ¥(MM(gS IRF 150 -151 IRF 152-153 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS RDS(on Id IRF150 100 V 0.055 n 40 A IRF151 60 V 0.055 n 40 A IRF152 100 V 0.08 « 33 A IRF153 60 V 0.08 fi 33 A • 60-100 VOLTS - FOR DC/DC CONVERTERS


    OCR Scan     		PDF IRF150 IRF151 IRF152 IRF153 irf 151 irf 150

    IRF162

    Abstract: IRF152 IRF161 IRF163 IRF150 1RF16 circuits of IRF150 MOSFET IRF150 IRF151 IRF153
    Text: Standard Power MOSFETs File Number 1»24 IRF150, IRF151, IRF152, IRF153 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 33 A and 40 A, 60 V - 100 V rDs on = 0.055 Ct and 0.08 Ci N -C H A N N E L E N H A N C E M E N T M O D E


    OCR Scan     		PDF IRF150, IRF151, IRF152, IRF153 IRF152 IRF153 75BVDSS IRF162 IRF161 IRF163 IRF150 1RF16 circuits of IRF150 MOSFET IRF150 IRF151

    IRF151

    Abstract: No abstract text available
    Text: 3QE D £Ÿ 7 • 7=12^537 QQ3G1SÖ 7 ■ H " . -<3 SCS-THOMSON S G S-THOMSON ■[LH^MKgS “ IRF151 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 221 x221 mils METALLIZATION: Top Al Back A u /C r/N i/A u BACKSIDE THICKNESS: 6100 A


    OCR Scan     		PDF IRF151 56x43 18x18 IRF151ECTRICAL

    TRANSISTORS 132 GD

    Abstract: IRF150 kiv-8 IRF151 circuits of IRF150
    Text: IRF150, IRF151, IRF152, IRF153 Semiconductor 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 33A and 40A, 60V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRF150, IRF151, IRF152, IRF153 TA17421. RF152, RF153 TRANSISTORS 132 GD IRF150 kiv-8 IRF151 circuits of IRF150

    irf113

    Abstract: IRF111 IRFI30 1RF48 IRF224 IRF48 1RF220 1RF9Z32 IR 310A IRF035
    Text: - 250 - m € tt € Ta=25<1C f t Vds Vgs I d P d or * /CH * /CH 4- Vdg If 1RF9Z32 IRF48 IRF034 IRFQ35 1RF044 IRF045 1RF120 IRF121 IRF122 IRF123 IRFI30 IRF131 IRF132 IRFI33 IRF14Û IRF141 IRFI42 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223


    OCR Scan     		PDF 1RF9Z32 O-220AB 1RF48 IRF034 irf222 irf223 irf224 O-204AA irf225 irf113 IRF111 IRFI30 IRF48 1RF220 IR 310A IRF035

    IRF150

    Abstract: IRF150 MOSFET MOSFET IRF150 IRF-150
    Text: IRF150, IRF151, IRF152, IRF153 HARRIS S E M I C O N D U C T O R 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 33A and 40A, 60V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRF150, IRF151, IRF152, IRF153 TA17421. RF152, IRF150 IRF150 MOSFET MOSFET IRF150 IRF-150

    blf544b

    Abstract: IRF224 IRF48 IRF9110 usb pre amplifier circuit diagram IRF035 irf113 IRF034 IRF123 blf245
    Text: - 250 - m € tt € f Ta=25<1C t Vds Vg s or 4- Vdg Id If 1RF9Z32 IRF48 IRF034 IRFQ35 1RF044 IRF045 1RF120 IRF121 IRF122 IRF123 IRFI30 IRF131 IRF132 IRFI33 IRF14Û IRF141 IRFI42 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF224 IRF225


    OCR Scan     		PDF 1RF9Z32 O-220AB 1RF48 IRF034 OT-268 BIF548 OT-262 IRF9Z10 O-220 blf544b IRF224 IRF48 IRF9110 usb pre amplifier circuit diagram IRF035 irf113 IRF123 blf245

    IRF150

    Abstract: irf 151 irf 150 IRF152
    Text: rrr scs-Thomson • ‘li, . IRF 150 - 151 IRF 152 - 153 M Â IQ J Ë lïïM IK ë S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^D S on *D IRF150 100 V 0.055 a 40 A IRF151 60 V 0.055 Q 40 A IRF152 100 V 0.08 S2 33 A IRF153 60 V 0.08 ß


    OCR Scan     		PDF IRF150 IRF151 IRF152 IRF153 SC-0338 SC-0339 SC-02/ irf 151 irf 150

    power 22D

    Abstract: irf64d IRF740 IRFP240 IRFP450 bridge IRF350 IRF120 IRF122 IRF123 IRF130
    Text: FRED ERICK COMPONENTS MIE 3> • 37n4ñS Q0D01b3 5 M FCI A CORTON COM PANY C POWER MOSFETs P ART-N O IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF232 IRF233


    OCR Scan     		PDF QDD01b3 IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 power 22D irf64d IRF740 IRFP240 IRFP450 bridge IRF350

    LD20A

    Abstract: iRF151
    Text: JOE T> _ • 7 ^ 5^537 OOaqTMq 1 ■ C T SGS-THOMSON ^7# RjflO g H[L[l(g¥lS®iD®i T i w K o T IRF 150 -151 IRF 152-153 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDss IRF150 100 V ^DS(on 0.055 a •d 40 A IRF151 60 V 0.055 fi 40 A IRF152


    OCR Scan     		PDF IRF150 IRF151 IRF152 IRF153 D021753 T-39-13 LD20A

    IRF150

    Abstract: R01E MOSFET IRF150 7S001 IRF151 IRF152 IRF153 IRF162 IRF160
    Text: OÏ 3875081 D Ë J 3075001 UG1Û27M 5 | “~ G E SOLID ST A TE _ 01E - — -File Number 18274 . , D Standard Power MOSFETs IRF150, IRF151, |RF152, IRF153


    OCR Scan     		PDF 7S001 IRF150, IRF151, RF152, IRF153 IRF152 IRF153 IRF150 R01E MOSFET IRF150 IRF151 IRF162 IRF160

    IRF150

    Abstract: IRF151 IRF150 MOSFET MOSFET IRF150 IRF150-152 IRF150 "on semiconductor"
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF150 IRF151 IRF152 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TM O S Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid


    OCR Scan     		PDF IRF150 IRF151 IRF152 IRF151. IRF150 MOSFET MOSFET IRF150 IRF150-152 IRF150 "on semiconductor"

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON i L[lOT ROD(gi IRF151 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 221 x221 mils Al A u/C r/N i/A u 6100 A 16 ± 2 mils


    OCR Scan     		PDF IRF151

    MTM20N08

    Abstract: MTM35N06 IRF141 IRF143 MTM10N06 MTM55N10 MTM35N05 MTM60N05 IRF150 MTM10N08
    Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 rDS(on) Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08


    OCR Scan     		PDF O-204AA IRF150* MTM55N10 MTM8N08 MTM8P08* MTM10N08 MTM12P08* MTM12N08 MTM20N08 MTM25N08Â MTM35N06 IRF141 IRF143 MTM10N06 MTM55N10 MTM35N05 MTM60N05 IRF150

    irf9110

    Abstract: SOT-123 IRF224 irf113 1rf48 BUZ10 BUZ63 IRF9122 irfl33 IRF034
    Text: - 250 - Ta=25<1C f m € tt € t Vd s or 4- V d g Vg s (V) (V) If l: * /CH * /CH (A) (W) V g s th) 1DSS Jg s s Pd Id max (nA) Vg s (V) C m A) Vd s (V) (V) (V) Id (mA) ff] % ft 1± Ciss (max) *typ V g s ( 0 ) (V) *typ (A) Id (A) 140* -25 TO-220AB 190* 25 TO-220AB


    OCR Scan     		PDF 1RF9Z32 O-220AB 1RF48 IRF034 BUZ171 O-220ftB irf120 to-204aa irf9110 SOT-123 IRF224 irf113 BUZ10 BUZ63 IRF9122 irfl33

    BUZ171

    Abstract: TO-236-AA buz90 BUZ80A BUZ84A BUZ10 BUZ11 buzh F133 251C
    Text: - 272 - f m % *± m * Vd s or £ t V £ Vg s Vd g V (V) %i fê (Ta=25,C ) ÎD Pd * /CH * /CH (A) (W) (nA) Vg s th) Id s s ÎGSS Vg s (V) (UA) Vd s (V) min max (V) (V) % 14 (Ta=25,C ) b(on) Ciss gfs Vg s (V) (Q> Id (A) Vg s (V) *typ (A) *typ (S) 3.0 1.0 6.0


    OCR Scan     		PDF BSI07A O-226kk BS170 O-226AA BSS123 O-236AA O-220AB BUZ171 O-220ftB irf120 TO-236-AA buz90 BUZ80A BUZ84A BUZ10 BUZ11 buzh F133 251C