NE1280 Search Results

NE1280100

Abstract: NE1280200 NE1280400 ca 9088 PT 14-106
Contextual Info: NE1280100 NE1280200 NE1280400 KA-BAND MEDIUM POWER HETERO-JUNCTION FET OUTLINE DIMENSIONS Units in µm FEATURES NE1280100 • HIGH FREQUENCY OPERATION: Up to 40 GHz • HIGH POWER OUT: Up to 1/2 Watt D • HIGH LINEAR GAIN: Over 10 dB at 18.7 GHz • HIGH EFFICIENCY: Up to 23% PAE

PT 14-106

Contextual Info: NE1280100 NE1280200 NE1280400 KA-BAND MEDIUM POWER HETERO-JUNCTION FET OUTLINE DIMENSIONS Units in µm FEATURES NE1280100 • HIGH FREQUENCY OPERATION: Up to 40 GHz • HIGH POWER OUT: Up to 1/2 Watt D • HIGH LINEAR GAIN: Over 10 dB at 18.7 GHz • HIGH EFFICIENCY: Up to 23% PAE

Contextual Info: NE1280100 NE1280200 NE1280400 KA-BAND MEDIUM POWER HETERO-JUNCTION FET OUTLINE DIMENSIONS Units in jam FEATURES NE1280100 • HIGH FREQUENCY OPERATION: Up to 40 GHz • HIGH POWER OUT: Up to 1/2 Watt • HIGH LINEAR GAIN: Over 10 dB at 18.7 GHz • HIGH EFFICIENCY: Up to 23% PAE

Contextual Info: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE1280 SERIES K-BAND MEDIUM POWER AMPLIFIE N-CHANNEL HJ-FET CHIPS DESCRIPTION CHIP DIMENSIONS unit: jum The NE1280 series is medium power HJ-FET chips which offer high output power and high gain for telecom

NE1280400

Contextual Info: PRELIMINARY DATA SHEET NE1280100 NE1280200 NE1280400 KA-BAND MEDIUM POWER HETERO-JUNCTION FET OUTLINE DIMENSIONS Units in^tm FEATURES NE1280100 • HIGH FREQUENCY OPERATION: Up to 40 GHz • HIGH POWER OUT: Up to 1/2 Watt • HIGH LINEAR GAIN: Over 10 dB at 18.7 GHz

kaba

Abstract: NE1280100 NE1280200 NE1280400
Contextual Info: NE1280100 NE1280200 NE1280400 KA-BAND MEDIUM POWER HETERO-JUNCTION FET OUTLINE DIMENSIONS Units in µm FEATURES NE1280100 • HIGH FREQUENCY OPERATION: Up to 40 GHz • HIGH POWER OUT: Up to 1/2 Watt D • HIGH LINEAR GAIN: Over 10 dB at 18.7 GHz • HIGH EFFICIENCY: Up to 23% PAE

NE9004

Abstract: NE850R5 9002 NE85001 NE9000 NE9001 ne900
Contextual Info: Typical Linear Gain vs. Frequency Unmatched Driver Devices 24.0 Linear Gain dB 21.0 NE850R5 18.0 NE9001/9002 NE9000 15.0 12.0 NE1280 NE85001 9.0 6.0 NE9004 3.0 0.3 10.0 1.0 30.0 Frequency (GHz) EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS

transistor NEC D 582

Contextual Info: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE1280 SERIES K-BAND MEDIUM POWER AMPLIFIE N-CHANNEL HJ-FET CHIPS DESCRIPTION CHIP DIMENSIONS unit: firn The NE1280 series is medium power HJ-FET chips which offer high output power and high gain for telecom

Contextual Info: NE1280100 NE1280200 NE1280400 KA-BAND MEDIUM POWER HETERO-JUNCTION FET OUTLINE DIMENSIONS Units in µm FEATURES NE1280100 • HIGH FREQUENCY OPERATION: Up to 40 GHz • HIGH POWER OUT: Up to 1/2 Watt D • HIGH LINEAR GAIN: Over 10 dB at 18.7 GHz • HIGH EFFICIENCY: Up to 23% PAE

xm 85-8-0

Abstract: NE1280 PT 14-106
Contextual Info: KA-BAND MEDIUM POWER HETERO-JUNCTION FET FEATURES NE1280100 NE1280200 NE1280400 OUTLINE DIMENSIONS Units in nm NE1280100 • HIGH FREQUENCY OPERATION: Up to 40 GHz • HIGH POWER OUT: Up to 1/2 Watt • HIGH LINEAR GAIN: Over 10 dB at 18.7 GHz • HIGH EFFICIENCY: Up to 23% PAE

NE1280100

Abstract: NE1280200 NE1280400
Contextual Info: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE1280 SERIES K-BAND MEDIUM POWER AMPLIFIE N-CHANNEL HJ-FET CHIPS CHIP DIMENSIONS unit: µm DESCRIPTION The NE1280 series is medium power HJ-FET chips which offer high output power and high gain for telecom

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

2SK2396

Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
Contextual Info: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数

uPD16305

Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
Contextual Info: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.

lg crt monitor circuit diagram

Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

ne900075

Abstract: NE9000
Contextual Info: X and Ku-Band Internally Matched GaAs Devices Typical Specifications @ Tc = 25°C Uiwartty Linear Power Added PidB Gain Efficiency1 V d s dBm (dB) (% ) (V) Pmt P out e w w m tf Dootm^ni (A) IMS (dBc) (V) (A) Package Style NEZ1414-2E 14 to 14.5 34.0 7,5 27

MICROPROCESSOR Z80

Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

uPC2581

Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8

ne6500278

Abstract: NEZ1414 NES2527B-30 NE1280100 NE6501077 NE85001 NE850R5 NES1821B-30 NES1821P-50
Contextual Info: Power GaAs FET Selection Graph Devices by Power by Frequency 49.0 NEZ4450-15D/15DL NES1821P-50 47.0 NES1821B-30 NEZ5964-15D/15DL NES2527B-30 NEZ6472-15D/15DL 45.0 NEZ3642-15D/15DL NEZ7785-15D/15DL 43.0 NEZ7177-8D/8DL 41.0 NEZ3642-8D NEZ4450-8D/8DL NEZ7785-8D/8DL

uPD72002-11

Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
Contextual Info: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。

uPD3599

Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

UAA 1006

Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Contextual Info: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH

sc5 s dc 6v relay

Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997

NEM0899F01-30

Contextual Info: Discrete Power Devices Selection Guide, 2-2 Power Devices Selection Guide US BAND INTERNALLY MATCHED GaAs DEVICES Typical Specifications @ Ta = 25'C » r u-v w i JL ct Ruawini i Part Number Frequency Range PidB GHz (dBm) Linearity Linear Power Added