NE850R5 Search Results

cd 1619 CP AUDIO

Abstract: cd 1691 cp IC cd 1619 CP ic HT 8970 cd 1619 CP of cd 1619 cp ic SL 1626 HT 25-19 5942 nec 8725
Contextual Info: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device

NEC k 3654

Abstract: gl 7445 nec k 813 NE850R599A nec 8725 gm 8562 5942 A 7601 0549
Contextual Info: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device

NE9004

Abstract: NE850R5 9002 NE85001 NE9000 NE9001 ne900
Contextual Info: Typical Linear Gain vs. Frequency Unmatched Driver Devices 24.0 Linear Gain dB 21.0 NE850R5 18.0 NE9001/9002 NE9000 15.0 12.0 NE1280 NE85001 9.0 6.0 NE9004 3.0 0.3 10.0 1.0 30.0 Frequency (GHz) EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS

NE8500100

Abstract: NE850R599
Contextual Info: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE850R599 ABSOLUTE MAXIMUM RATINGS1 FEATURES TC= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 0.5 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.5 dB VDSX Drain to Source Voltage

NEC Microwave Semiconductors

Contextual Info: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE850R599A FEATURES_ OUTLINE DIMENSIONS • HIGH O U T P U T POW ER: 0.5 W Units in mm PACKAGE OUTLINE 99 • HIGH LINEAR GAIN: 9.5 dB • HIG H EFFICIENC Y (PAE): 38% • SU PER IO R IN TER M O D U LA TIO N DISTORTIO N

nec microwave

Abstract: MESFET NE850R599A NEC Microwave Semiconductors NE8500100
Contextual Info: C-BAND MEDIUM POWER GaAs MESFET NE850R599A OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: 0.5 W PACKAGE OUTLINE 99 • HIGH LINEAR GAIN: 9.5 dB 5.2±0.3 • HIGH EFFICIENCY (PAE): 38% 1.0±0.1 • SUPERIOR INTERMODULATION DISTORTION 4.0 MIN BOTH LEADS

NE850R5

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device

63000-000

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device

Contextual Info: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device

nec microwave

Abstract: NEC Microwave Semiconductors
Contextual Info: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE850R599A OUTLINE DIMENSIONS FEATURES HIGH OUTPUT POWER: 0 5 W Units in r PACKAGE OUTLINE 99 HIGH LINEAR GAIN: 9 5 dB -5.2i0.3-*j HIGH EFFICIENCY (PAE : 38% - 1 . 0 ± 0.1 N SUPERIOR INTERMODULATION DISTORTION

850R599

Contextual Info: PRELIMINARY DATASHEET C-BAND MEDIUM POWER GaAs MESFET NE850R599 ABSOLUTE MAXIMUM RATINGS1 FEATURES Tc= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 0.5 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.5 dB V dsx Drain to Source Voltage

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

NE850R5

Abstract: NE850R599
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK2396

Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
Contextual Info: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数

nf025

Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
Contextual Info: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920

lg crt monitor circuit diagram

Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

65004

Abstract: 850R5 NE8500199 NE6500496 NE850R599 marking 101 california 1503
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 96/99 5.2±0.3 MARKING 1.0±0.1 YEAR INDICATOR f 2.2±0.2 4.0 MIN BOTH LEADS 4.3±0.2 MONTH INDICATOR B +.06 0.1 -.02 4.0±0.1 MONTH

ne900075

Abstract: NE9000
Contextual Info: X and Ku-Band Internally Matched GaAs Devices Typical Specifications @ Tc = 25°C Uiwartty Linear Power Added PidB Gain Efficiency1 V d s dBm (dB) (% ) (V) Pmt P out e w w m tf Dootm^ni (A) IMS (dBc) (V) (A) Package Style NEZ1414-2E 14 to 14.5 34.0 7,5 27

MICROPROCESSOR Z80

Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

nec k 813

Abstract: NE850R599A nec 8725
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17

uPC2581

Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8

ne6500278

Abstract: NEZ1414 NES2527B-30 NE1280100 NE6501077 NE85001 NE850R5 NES1821B-30 NES1821P-50
Contextual Info: Power GaAs FET Selection Graph Devices by Power by Frequency 49.0 NEZ4450-15D/15DL NES1821P-50 47.0 NES1821B-30 NEZ5964-15D/15DL NES2527B-30 NEZ6472-15D/15DL 45.0 NEZ3642-15D/15DL NEZ7785-15D/15DL 43.0 NEZ7177-8D/8DL 41.0 NEZ3642-8D NEZ4450-8D/8DL NEZ7785-8D/8DL

uPD72002-11

Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
Contextual Info: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。