NE21800 Search Results

NE21800 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
NE21800		NEC	60 GHz, low noise X-band GaAs MESFET		Scan	PDF	189.16KB	5

NE21800 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK281 Abstract: 203l2 NE218 NE21889 NE21800 Contextual Info: NEC/ L427414 OOOlblH Q 1SE D CALIFORNIA NEC T - 3 ,h lS LOW NOISE X-BAND G aAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V E R Y H IG H fmax: 60 G H z The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure	OCR Scan	Lj457414 NE21800 NE21889 NE218 NE21800) 2SK281 203l2 NE21889	PDF
2SK281 Abstract: sl2109 Contextual Info: N E C / 15E D CALIFORNIA SEC • b427414 QOOlblS 0 T - 3 t- 2 C LOW NOISE X-BAND GaAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V ER Y H IG H fmax: 60 GHz The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure	OCR Scan	b427414 NE21800 NE21889 NE218 NE21800) NE21889) 2SK281 sl2109	PDF
Contextual Info: NE21800 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V)5.0 V(BR)GSS (V) I(D) Max. (A)120m P(D) Max. (W)500m Maximum Operating Temp (øC)175õ I(DSS) Min. (A) I(DSS) Max. (A) @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) g(fs) Min. (S) Trans. conduct.	Original	NE21800	PDF

Catalog Datasheet

Type

Document Tags

PDF

2SK281

Abstract: 203l2 NE218 NE21889 NE21800
Contextual Info: NEC/ L427414 OOOlblH Q 1SE D CALIFORNIA NEC T - 3 ,h lS LOW NOISE X-BAND G aAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V E R Y H IG H fmax: 60 G H z The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure

OCR Scan

Lj457414 NE21800 NE21889 NE218 NE21800) 2SK281 203l2 NE21889

PDF

2SK281

Abstract: sl2109
Contextual Info: N E C / 15E D CALIFORNIA SEC • b427414 QOOlblS 0 T - 3 t- 2 C LOW NOISE X-BAND GaAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V ER Y H IG H fmax: 60 GHz The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure

OCR Scan

b427414 NE21800 NE21889 NE218 NE21800) NE21889) 2SK281 sl2109

PDF

Contextual Info: NE21800 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V)5.0 V(BR)GSS (V) I(D) Max. (A)120m P(D) Max. (W)500m Maximum Operating Temp (øC)175õ I(DSS) Min. (A) I(DSS) Max. (A) @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) g(fs) Min. (S) Trans. conduct.

Original

NE21800

PDF