NE76084S Search Results

0544S

Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET NE76084S NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V d s = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz 24 HIGH ASSOCIATED GAIN G a = 9 dB TYP at f = 12 GHz 21 CO L g = 0.3 ^m , W g = 280 jam

yx 861

Abstract: yx 801 BUH 508 VAUC GT 1083 NE76084-T1 NE76083A NE76084S L to Ku Band Low Noise GaAs MESFET x band GaAs MESFET 261
Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET NE76084S NOISE FIGURE ANO ASSOCIATED GAIN vs FREQUENCY Vos = 3 V, Id s • 10 mA FEATURES LOW NOISE FIGURE NF * 1,6 d8 TYP a! f = 12 GHz HIGH ASSOCIATED GAIN G a = 9 0 0 TYP at f • 12 GHz LG • 0.3 ¿im. W g = 280 S LOW COST METAL/CERAMIC PACKAGE

IC DS 1242

Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, Ids = 10 mA FEATURES • NE76084S LOW NOISE FIGURE NF = 1.6 dB TYP at f= 12 GHz • HIGH ASSOCIATED GAIN Ga = 9 dB TYP at f = 12 GHz • Lg = 0.3 [im, Wg = 280 \im

NE76084

Abstract: marking code t1a NE76084-T1 C10535E NE76084-SL NE76084-T1A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

LORB

Abstract: NE2720 NE334S01
Contextual Info: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18

NE76084-T1

Abstract: NE76083A NE76084S 4439 gm
Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz 4 • HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz • ION IMPLANTATION • AVAILABLE IN TAPE & REEL

Contextual Info: LOW NOISE LTO Ku BAND GaAs MESFET FEATURES NE76084 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, I ds = 10 mA LOW NOISE FIGURE NF - 1.6 dB TYP at f - 12 GHz HIGH ASSOCIATED GAIN G a = 9 dB TYP at f = 12 GHz m 33 , L g = 0.3 jim, Wg = 280 jim <

gs 069 0605

Abstract: NE76084 marking code t1a nec 2571 NE76084-T1 C10535E NE76084-SL NE76084-T1A 6-18GHz NEC Ga FET marking V
Contextual Info: DATA SHEET GaAs MES FET NE76084 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES PACKAGE DIMENSIONS Unit: mm • Low noise figure & High associated gain NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz 1.78 ± 0.2 • Gate length: L g = 0.3 µ m

NE76084

Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76084 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz < HIGH ASSOCIATED GAIN Ga = 9 dB TYP at f = 12 GHz • L g = 0.3 im , W g = 280 Jim . LOW COST METAL/CERAMIC PACKAGE

4439 gm

Abstract: NE76083A NE76084S NE76084-T1
Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • LOW COST METAL/CERAMIC PACKAGE • ION IMPLANTATION • AVAILABLE IN TAPE & REEL 21 3.5

Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET NE76084 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, Ids = 10 mA FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP a tf = 12 GHz • HIGH ASSOCIATED GAIN Ga = 9 dB TYP at 1 = 12 GHz • La s 0.3 iim, Wa = 280 |xm