PD45128163 Search Results

D45128841G5-A80

Contextual Info: PRELIMINARY DATA SHEET / - N E C ^ MOS INTEGRATED CIRCUIT _ / /¿ P D 4 5 1 2 8 4 4 1 ,4 5 1 2 8 8 4 1 , 4 5 1 2 8 1 6 3 128 M-bit Synchronous DRAM

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-458CA727 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE ★ Description The MC-458CA727LF is a 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64M

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT P D 4 5 1 2 8 4 4 1 - A 7 5 ,4 5 1 2 8 8 4 1 -A 7 5 , 4 5 1 2 8 1 6 3 -A 7 5 128M-bit Synchronous DRAM, 133MHz 4-bank, LVTTL Description The ,uPD45128441-A75, 45128841-A75 and 45128163-A75 are high-speed 134,217,728-bit synchronous dynamic

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CD64KS, 4516CD64ES 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-4516CD64KS, 4516CD64ES is a 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128 M SDRAM: ,PD45128163 are assembled.

thermometer lm35 with 7segment

Abstract: v850e2 dSMC rb40 bridge bridge rb60 kawasaki r142 DW7000 SD16CS BT31 ME200
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PD23C64020

Abstract: PD45D128442 4M84 PD45D128842 256M5 0443 IC PD23C64000AL 45V16A PD264 A80L
Contextual Info: IC Memory CD-ROM IC Memory CD-ROM X13769XJ2V0CD00 04-1 IC Memory Dynamic RAM • Synchronous DRAM: SDR Single Data Rate , 256M bits (x4 bits organization) Density (bits) Organization (words × bits × banks) Part number 256M★ 16M×4×4 µ PD45256441 Speed

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /JPD4512 8 4 4 1 ,4 5 1 2 8 8 4 1 ,4 5 1 2 8 1 6 3 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ^¡PD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-458CA726 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE ★ Description The MC-458CA726F and MC-458CA726LFA are 8,388,608 words by 72 bits synchronous dynamic RAM module on

4516CD

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CD641ES 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-4516CD641 ES is a 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128M SDRAM: ,PD45128163 are assembled.

Contextual Info: DATA SHEET M F f * / MOS INTEGRATED CIRCUIT / MC-458CB641 ES 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The M C -4 5 8 C B 6 4 1 E S is a 8 ,3 8 8 ,6 0 8 w o rd s by 64 bits syn ch ro n o u s d yn a m ic RAM m odule (S m all O utlin e DIM M ) on

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CD64KS 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description ★ The MC-4516CD64KS is a 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128 M SDRAM: ,PD45128163 are assembled.

30A120

Abstract: D45128 ATEN 1327
Contextual Info: PRELIMINARY DATA SHEET N E C ^ MOS INTEGRATED CIRCUIT _ / /¿ P D 4 5 1 2 8 4 4 1 ,4 5 1 2 8 8 4 1 , 4 5 1 2 8 1 6 3 128 M-bit Synchronous DRAM 4-bank, LVTTL Description The /¿PD45128441, 45128841, 45128163 are high-speed 134,217,728 bit synchronous dynamic random-access

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CA721 ESA 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-458CA721 ESA is a 8,388,608 words by 72 bits synchronous dynamic RAM module (Small Outline DIMM) on which 5 pieces of 128M SDRAM: ,PD45128163 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CD64S 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-4516CD64S is a 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128 M SDRAM: ,PD45128163 are assembled.

Contextual Info: DATA SHEET M F f * / MOS INTEGRATED CIRCUIT / MC-458CB641 ES 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-458CB641ES is a 8,388,608 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 4 pieces of 128M SDRAM: ^¡PD45128163 are assembled.

d45128163

Abstract: D45128163G5
Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-458CB647 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE ★ Description The MC-458CB647LF is a 8,388,608 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 64M

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4, 2,097,152 x 16 x 4 word x bit x bank , respectively.

SAW30

Abstract: V850E2 STB236 DW7000 m8512 p3098 TLR124 PD703111 dSMC U16794JJ3V0AN
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

A80L

Abstract: PC100 4M84 2M164 upd432836 uPD432836AL 0443 IC 512k*8 sram 450 mil uPD432836L PC133-333
Contextual Info: CD-ROM用ICメモリ CD-ROM X13769XJ2V0CD00 04−1 IC メモリ ダイナミックRAM • シンクロナスDRAM：SDR（シングル・データ・レート），256Mビット（x４ビット構成） 容量 構成 品 名 （ビット） （ワード

C-458C

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB646 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE ★ Description The MC-458CB646F and MC-458CB646LFA are 8,388,608 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 64M SDRAM: ,uPD4564841 are assembled, and the MC-458CB646EFB is a 8,388,608 words by 64

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CD641 ES 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-4516CD641ES is a 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128M SDRAM: ,PD45128163 are assembled.

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT //PD45128441,45128841,45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4, 2,097,152 x 16 x 4 word x bit x bank , respectively.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CA721LS 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-458CA721 LS is a 8,388,608 words by 72 bits synchronous dynamic RAM module (Small Outline DIMM) on which 7 pieces of 64M SDRAM: ,uPD4564841 and 1 piece of 128M SDRAM: ,PD45128163 are assembled.

8668 rc

Abstract: 16MX8X4 PD45128441G5 32Mx4x4 NEC SINGAPORE 4701 NEC
Contextual Info: SEMICONDUCTORS, SINGAPORE Sept. 2000 TRQ-00-09-343 128M SDRAM RELIABILITY REPORT This report contains reliability data on the following CMOS Synchronous DRAM products fabricated and assembled at the NEC facilities in Singapore. µ PD45128441/841/163G5 Rev. E