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    PDTC114E Price and Stock

    Nexperia PDTC114ET-QVL

    TRANS PREBIAS NPN 50V TO236AB
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    Nexperia PDTC114ET,235

    TRANS PREBIAS NPN 50V TO236AB
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    Nexperia PDTC114ET-QR

    TRANS PREBIAS NPN 50V TO236AB
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    DigiKey PDTC114ET-QR Reel 15,000 3,000
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    Nexperia PDTC114EQBZ

    TRANS PREBIAS PNP 50V 0.1A 3DFN
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    Nexperia PDTC114EQC-QZ

    TRANS PREBIAS NPN 50V 0.1A 3DFN
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    PDTC114E Datasheets (70)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PDTC114EE NXP Semiconductors PDTC114EE - NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EE ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 150 mW; Resistor ratio: 1 ; VCEO max: 50 V Original PDF
    PDTC114EE Philips Semiconductors NPN Resistor-Equipped Transistor, R1 = 10 kohm, R2 = 10 kohm Original PDF
    PDTC114EE Philips Semiconductors NPN resistor-equipped transistor Original PDF
    PDTC114EE,115 NXP Semiconductors NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EE ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 150 mW; Resistor ratio: 1 ; VCEO max: 50 V; Package: SOT416 (SC-75); Container: Tape reel smd Original PDF
    PDTC114EE,115 NXP Semiconductors PDTC114 - TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, 3 PIN, BIP General Purpose Small Signal Original PDF
    PDTC114EEF Philips Semiconductors NPN Resistor-Equipped Transistor, R1 = 10 kohm, R2 = 10 kohm Original PDF
    PDTC114EEF Philips Semiconductors NPN resistor-equipped transistor Original PDF
    PDTC114EEFTR Philips Semiconductors NPN resistor-equipped transistor Original PDF
    PDTC114EET/R NXP Semiconductors NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EE ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 150 mW; Resistor ratio: 1 ; VCEO max: 50 V Original PDF
    PDTC114EETR Philips Semiconductors NPN resistor-equipped transistor Original PDF
    PDTC114EK NXP Semiconductors PDTC114EK - NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EK ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 250 mW; Resistor ratio: 1 ; VCEO max: 50 V Original PDF
    PDTC114EK Philips Semiconductors NPN Resistor-Equipped Transistor, R1 = 10 kohm, R2 = 10 kohm Original PDF
    PDTC114EK Philips Semiconductors NPN resistor-equipped transistor Original PDF
    PDTC114EK,115 Philips Semiconductors Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SMT3 Original PDF
    PDTC114EK,135 Philips Semiconductors Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SMT3 Original PDF
    PDTC114EKT4 Philips Semiconductors NPN resistor-equipped transistor Original PDF
    PDTC114EKT/R NXP Semiconductors NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EK ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 250 mW; Resistor ratio: 1 ; VCEO max: 50 V Original PDF
    PDTC114EM NXP Semiconductors PDTC114EM - NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm Original PDF
    PDTC114EM Philips Semiconductors NPN Resistor-Equipped Transistor, R1 = 10 kohm, R2 = 10 kohm Original PDF
    PDTC114EM Philips Semiconductors PDTC114E series, NPN resistor-equipped transistors, R1 = 10 kOhm, R2 = 10 kOhm Original PDF

    PDTC114E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PDTC114EU

    Abstract: PDTA114EU PDTA114E
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC114EU NPN resistor-equipped transistor Product specification Supersedes data of 1998 Nov 26 1999 Apr 16 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EU FEATURES


    Original
    PDF M3D102 PDTC114EU MAM134 OT323) SCA63 115002/00/04/pp8 PDTC114EU PDTA114EU PDTA114E

    PDTC114

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC114EK NPN resistor-equipped transistor Product specification Supersedes data of 1997 Jul 04 File under Discrete Semiconductors, SC04 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor


    Original
    PDF M3D114 PDTC114EK SC-59 PDTA114EK. MGA893 PDTC114EK SCA60 115104/1200/02/pp8 PDTC114

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D088 PDTC114ET NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ET FEATURES


    Original
    PDF M3D088 PDTC114ET PDTA114ET. MGA893 PDTC114ET MAM097 SCA60 115104/00/06/pp8

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTC114EMB SO T8 NPN resistor-equipped transistor; R1 = 10 k , R2 = 10 k Rev. 1 — 21 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original
    PDF PDTC114EMB DFN1006B-3 OT883B) PDTA114EMB. AEC-Q101

    TRANSISTOR SMD MARKING CODE rd

    Abstract: TRANSISTOR SMD MARKING CODE SP marking code UL SMD Transistor SMD TRANSISTOR MARKING DE TRANSISTOR SMD CODE PACKAGE SOT23 PDTA114EEF PDTC114EEF SC-89 SMD transistor MARKING CODE 213
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC114EEF NPN resistor-equipped transistor Product specification Supersedes data of 1998 Nov 11 1999 May 31 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EEF FEATURES • Power dissipation comparable to


    Original
    PDF M3D425 PDTC114EEF MAM412 SC-89; OT490) 115002/02/pp8 TRANSISTOR SMD MARKING CODE rd TRANSISTOR SMD MARKING CODE SP marking code UL SMD Transistor SMD TRANSISTOR MARKING DE TRANSISTOR SMD CODE PACKAGE SOT23 PDTA114EEF PDTC114EEF SC-89 SMD transistor MARKING CODE 213

    marking code 10 sot23

    Abstract: PDTC114ET PDTA114ET
    Text: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D088 PDTC114ET NPN resistor-equipped transistor Product specification Supersedes data of 1998 Nov 26 1999 Apr 15 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ET FEATURES


    Original
    PDF M3D088 PDTC114ET MAM097 SCA63 115002/00/07/pp8 marking code 10 sot23 PDTC114ET PDTA114ET

    PDTA114EK

    Abstract: PDTC114EK
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC114EK NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EK FEATURES


    Original
    PDF M3D114 PDTC114EK MAM284 SC-59) SCA60 115104/00/03/pp8 PDTA114EK PDTC114EK

    PDTC114EU,115

    Abstract: No abstract text available
    Text: PDTC114E series NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k Rev. 12 — 21 December 2011 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET family in small Surface-Mounted Device (SMD) plastic packages.


    Original
    PDF PDTC114E PDTC114EE OT416 SC-75 PDTA114EE PDTC114EM OT883 SC-101 PDTA114EM PDTC114ET PDTC114EU,115

    TC114E

    Abstract: PDTC114ES PDTC114EE PDTC114EEF PDTC114EK PDTC114EM PDTC114ET PDTC114EU SC-75 SC-89
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC114E series NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Product data sheet Supersedes data of 2003 Apr 10 2004 Aug 05 NXP Semiconductors Product data sheet NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ


    Original
    PDF PDTC114E R75/10/pp14 TC114E PDTC114ES PDTC114EE PDTC114EEF PDTC114EK PDTC114EM PDTC114ET PDTC114EU SC-75 SC-89

    PDTC114EM

    Abstract: PDTC114E Series
    Text: PDTC114E series NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k Rev. 12 — 21 December 2011 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET family in small Surface-Mounted Device (SMD) plastic packages.


    Original
    PDF PDTC114E PDTC114EE PDTC114EM PDTC114ET PDTC114EU OT416 OT883 OT323 SC-75 SC-101 PDTC114E Series

    TC114E

    Abstract: PDTC114ES PDTC114EE PDTC114EEF PDTC114EK PDTC114EM PDTC114ET PDTC114EU SC-75 SC-89
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC114E series NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Product specification Supersedes data of 2003 Apr 10 2004 Aug 05 Philips Semiconductors Product specification NPN resistor-equipped transistor;


    Original
    PDF PDTC114E SCA76 R75/10/pp14 TC114E PDTC114ES PDTC114EE PDTC114EEF PDTC114EK PDTC114EM PDTC114ET PDTC114EU SC-75 SC-89

    PDTC114ES

    Abstract: PDTA114ES
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114ES NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 18 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ES FEATURES • Built-in bias resistors R1 and R2


    Original
    PDF M3D173 PDTC114ES MAM364 SCA60 115104/00/03/pp8 PDTC114ES PDTA114ES

    PDTC114EE

    Abstract: PDTA114EE SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114EE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Nov 26 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EE FEATURES PINNING • Built-in bias resistors R1 and R2 typ. 10 kΩ each


    Original
    PDF M3D173 PDTC114EE 115002/00/04/pp8 PDTC114EE PDTA114EE SC-75

    T09 marking

    Abstract: T09 sot323
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC114EU NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EU FEATURES


    Original
    PDF M3D102 PDTC114EU OT323 PDTA114EU. MGA893 PDTC114EU SCA60 115104/00/03/pp8 T09 marking T09 sot323

    PDTC114EE

    Abstract: 04833 04-833
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114EE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Jul 31 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EE FEATURES • Built-in bias resistors R1 and R2


    Original
    PDF M3D173 PDTC114EE SC-75 PDTA114EE. MGA893 PDTC114EE MAM346-p, SCA60 115104/00/03/pp8 04833 04-833

    SMD transistor MARKING CODE 43

    Abstract: TRANSISTOR SMD MARKING CODE A1 TRANSISTOR SMD MARKING CODE 42 SMD Transistor A1 TC114E smd TRANSISTOR code marking 36 smd TRANSISTOR code marking 013 Transistor SMD marking code NV smd transistor 023 TRANSISTOR SMD MARKING CODE X D
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC114E series NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Product specification Supersedes data of 1999 May 31 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistor;


    Original
    PDF PDTC114E resistor-equipPDTC114EE PDTC114EU PDTC114EEF SMD transistor MARKING CODE 43 TRANSISTOR SMD MARKING CODE A1 TRANSISTOR SMD MARKING CODE 42 SMD Transistor A1 TC114E smd TRANSISTOR code marking 36 smd TRANSISTOR code marking 013 Transistor SMD marking code NV smd transistor 023 TRANSISTOR SMD MARKING CODE X D

    t8 smd transistor

    Abstract: No abstract text available
    Text: 83B PDTC114EMB SO T8 NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Rev. 1 — 21 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original
    PDF PDTC114EMB DFN1006B-3 OT883B) PDTA114EMB. AEC-Q101 t8 smd transistor

    339 marking code SMD transistor

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC114EEF NPN resistor-equipped transistor Preliminary specification 1998 Nov 11 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC114EEF FEATURES • Power dissipation comparable to


    Original
    PDF M3D425 PDTC114EEF SC-89 OT490) PDTA114EEF. SCA60 115104/00/01/pp8 339 marking code SMD transistor

    transistor t09

    Abstract: PDTC114EU
    Text: Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EU FEATURES • Built-in bias resistors R1 and R2 typ. 10 kO each H • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS 13— B


    OCR Scan
    PDF PDTC114EU OT323) OT323 PDTA114EU. transistor t09 PDTC114EU

    transistor p16

    Abstract: pdtc114et
    Text: Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ET FEATURES • Built-in bias resistors R1 and R2 typ. 10 k£2 each • Sim plification of circuit design • Reduces num ber of com ponents and board space. APPLICATIONS


    OCR Scan
    PDF PDTC114ET PDTA114ET. transistor p16 pdtc114et

    transistor B 892

    Abstract: PDTC114EE
    Text: Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC114EE FEATURES • Built-in bias resistors R1 and R2 typ. 10 k ii each • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS


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    PDF PDTC114EE SC-75 PDTA114EE. PDTC114EE transistor B 892

    114ET

    Abstract: PDTA114E PDTC114E
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 Nov 26 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ET FEATURES • Built-in bias resistors R1 and R2


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    PDF PDTC114ET MAM097 PDTA114ET. 115002/00/07/pp8 114ET PDTA114E PDTC114E

    PDTC114ES

    Abstract: PDTA114ES
    Text: Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ES FEATURES • Built-in bias resistors R1 and R2 typ. 10 kQ each • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space


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    PDF PDTC114ES PDTA114ES. PDTC114ES PDTA114ES

    transistor w 04 59

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EK FEATURES • Built-in bias resistors R1 and R2 typ. 10 k n each • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space


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    PDF PDTC114EK SC-59) SC-59 PDTA114EK. transistor w 04 59