PJ04N03D Search Results

PJ04N03D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: PJ04N03D 25V N-Channel Enhancement Mode Field Effect Transistor TO-252 FEATURES • RDS ON ,VGS@10V,I DS@30A=4mΩ • RDS(ON),VGS@5.0V,I DS@24A=6mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers	Original	PJ04N03D O-252 2002/95/EC O-252 MIL-STD-750 04N03D 983A5F 2009-REV	PDF
DS24A Abstract: 04N03D PJ04N03d Contextual Info: PJ04N03D 25V N-Channel Enhancement Mode Field Effect Transistor TO-252 FEATURES • RDS ON ,VGS@10V,I DS@30A=4mΩ • RDS(ON),VGS@5.0V,I DS@24A=6mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers	Original	PJ04N03D O-252 2002/95/EC O-252 MIL-STD-750 04N03D 2009-REV DS24A 04N03D PJ04N03d	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: PJ04N03D 25V N-Channel Enhancement Mode Field Effect Transistor TO-252 FEATURES • RDS ON ,VGS@10V,I DS@30A=4mΩ • RDS(ON),VGS@5.0V,I DS@24A=6mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers

Original

PJ04N03D O-252 2002/95/EC O-252 MIL-STD-750 04N03D 983A5F 2009-REV

PDF

DS24A

Abstract: 04N03D PJ04N03d
Contextual Info: PJ04N03D 25V N-Channel Enhancement Mode Field Effect Transistor TO-252 FEATURES • RDS ON ,VGS@10V,I DS@30A=4mΩ • RDS(ON),VGS@5.0V,I DS@24A=6mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers

Original

PJ04N03D O-252 2002/95/EC O-252 MIL-STD-750 04N03D 2009-REV DS24A 04N03D PJ04N03d

PDF