983A5F Search Results
983A5F Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PJN1N60D TO-92 600V N-Channel Enhancement Mode MOSFET FEATURES • 0.5A, 600V, RDS ON =15Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS |
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PJN1N60D 2002/95/EC MIL-STD-750 1N60D 700ppm, 1000ppm 100ppm. | |
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Contextual Info: PJ04N03D 25V N-Channel Enhancement Mode Field Effect Transistor TO-252 FEATURES • RDS ON ,VGS@10V,I DS@30A=4mΩ • RDS(ON),VGS@5.0V,I DS@24A=6mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers |
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PJ04N03D O-252 2002/95/EC O-252 MIL-STD-750 04N03D 983A5F 2009-REV | |
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Contextual Info: PJP24N10 / PJF24N10 TO-220AB / ITO-220AB 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ TO-220AB ITO-220AB • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current |
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PJP24N10 PJF24N10 O-220AB ITO-220AB O-220AB 2002/95/EC ITO-220AB MIL-STD-750 | |
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Contextual Info: PJB24N10 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Designed for AC Adapter, High-Frequency Switch |
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PJB24N10 2002/95/EC O-263 MIL-STD-750 B24N10 O-263 800PCS/REEL 983A5F 2010-REV |