PN109L Search Results

Contextual Info: Panasonic Phototransistors PN109L Silicon NPN Phototransistor For optical control systems • Features • H igh sensitivity : I Ce l = 3-5 mA (min.) (at L = 100 lx) • Built-in filter to cutoff visible light for reducing am bient light noise • Peak sensitivity w avelength matched with infrared light emitting

PT-103

Abstract: PH110 PT108A pt77 PH114 PH109 PN101 PN101F PT-101 PT-102
Contextual Info: - 288- I 1'J PT108A FH109 PH110 rn n ^ PH1161L PT8L PN101 PN101F PN102F PN102 PN106 PN107 PN108 PN107F PN108F PN10SCL PN109CL PN109F PN109L PN 110 PN111W PN115 PN116 PN120S PN121S PN123S PN126S PN127 PN147 £ tfc B & it & II min mA 'S 0.2 10 0.2 0.04 0.04

PN109L

Abstract: PNZ109L K50010
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ109L (PN109L) Silicon planar type For optical control systems • Features  High sensitivity: IL = 3.5 mA (min.)  Built-in filter to cutoff visible light for reducing ambient light noise

phototransistor visible light

Abstract: PN109L
Contextual Info: Panasonic Phototransistors PN109L Silicon NPN Phototransistor For optical control system s • F eatures • High sensitivity : I C e l = 3 - 5 mA (min.) (at L = 100 lx) • Built-in filter to cutoff visible light for reducing ambient light noise • Peak sensitivity wavelength matched with infrared light emitting

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ109L (PN109L) Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens • Features M Di ain sc te on na tin nc ue e/ d 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ109L (PN109L) Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens • Features 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Built-in filter to cutoff visible light for reducing ambient light noise

PN109L

Abstract: PNZ109L
Contextual Info: Phototransistors PNZ109L PN109L Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting

PN109L

Abstract: PNZ109L
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ109L (PN109L) Silicon planar type For optical control systems • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

PN109L

Abstract: PNZ109L
Contextual Info: Phototransistors PNZ109L PN109L Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens • Features 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Built-in filter to cutoff visible light for reducing ambient light noise

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

transistor 30021

Abstract: PNA4602M
Contextual Info: Photo Detectors/Photo S3 • PIN Photodiodes for AF, CD, VD, Optical Communications, Control and Space Transmission Flat (Clear) 2 divisions Flat (Visible light cut) 2 divisions Flat (Visible light cut) 2 divisions Flat (Visible light cut) PSD Flat (Visible light

1k88

Abstract: PN3634 1R88 6N3P PNA4602M
Contextual Info: I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control II A p tr.tl e min. typ. lyp. typ. ( m A) (nm) (ns) (deg) PN3104 Flat (Clear) PSD 30 2 2 2 940 8 a 65 PN3106(N) Flat (Clear) PSD 30 2 13 940 5 u Flat (Clear) 2 PN3206

PN126S

Abstract: ON1503 PN7103
Contextual Info: Photo Detectors/Photo Couplers • PIN Photodiodes for AF, CD, VD, Optical ■ Phototransistors Communications and Control A p tr.ti II Appli­ Package VB Id min. typ. typ. cations Type No. Construciton No. (V) max. (nA) (nm) (ns) PN312C(N) Flat (Clear) 2 division 037 30 20 10 900 10

bt35f

Abstract: mf03 c PNA4602M
Contextual Info: Photo Detectors/Photo Couplers I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control Appli­ cations Type No. PN334 Flat (Clear) 2 division Flat (Clear) PSD Flat (Clear) PSD Flat (Clear) 2 division Flat (Viable light cut) 2 division

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

PNZ335

Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Contextual Info: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)