PN123S Search Results

Contextual Info: Phototransistors PNZ123S PN123S Silicon planar type Unit: mm φ3.0±0.15 3.75±0.3 • Features 12.5 min. • High sensitivity • Low dark current • Fast response: tr = 3 µs (typ.) • Small size (φ3) ceramic package 2.0±0.2 For optical control systems

"Photo Interrupter"

Abstract: OPTICAL INTERRUPTER LN62S PN123S
Contextual Info: Panasonic Phototransistors PN123S Silicon NPN Phototransistor For optical control systems Can be combined with LN62S to form an photo interrupter • Features • High sensitivity • Low dark current • Fast response : tr = 3.5 |^s typ. • Small size (0 3) ceramic package

Contextual Info: Panasonic Phototransistors PN123S Silicon NPN Phototransistor For optical control systems Can be combined with LN62S to form an photo interrupter • Features • H ig h sensitivity • L ow d ark cu rren t • F a st re sp o n se : tr = 3.5 |^s typ. • S m all size (0 3) ceram ic pack ag e

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ123S (PN123S) Silicon planar type Unit: mm φ3.0±0.2 4.1±0.3 • Features 12.5 min. • High sensitivity • Low dark current • Fast response: tr = 3 µs (typ.) • Small size (φ3) ceramic package

PT-103

Abstract: PH110 PT108A pt77 PH114 PH109 PN101 PN101F PT-101 PT-102
Contextual Info: - 288- I 1'J PT108A FH109 PH110 rn n ^ PH1161L PT8L PN101 PN101F PN102F PN102 PN106 PN107 PN108 PN107F PN108F PN10SCL PN109CL PN109F PN109L PN 110 PN111W PN115 PN116 PN120S PN121S PN123S PN126S PN127 PN147 £ tfc B & it & II min mA 'S 0.2 10 0.2 0.04 0.04

"Photo Interrupter" Application Note

Abstract: LN62S PN123S PNZ123S
Contextual Info: Phototransistors PNZ123S PN123S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an photo interrupter Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Low dark current Fast response : tr = 3.5 µs (typ.)

Contextual Info: Phototransistors PNZ123S PN123S Silicon planar type Unit: mm φ3.0±0.2 4.1±0.3 • Features 12.5 min. • High sensitivity • Low dark current • Fast response: tr = 3 µs (typ.) • Small size (φ3) ceramic package 2.0±0.2 For optical control systems

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ123S (PN123S) Silicon planar type Unit: mm φ3.0±0.15 3.75±0.3 • Features 12.5 min. • High sensitivity • Low dark current • Fast response: tr = 3 µs (typ.) • Small size (φ3) ceramic package

PNZ123S

Abstract: PN123S
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ123S (PN123S) Silicon planar type For optical control systems • Features  High sensitivity  Low collector-emitter cutoff current (base open)  Fast response: tr = 3 s (typ.)

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

transistor 30021

Abstract: PNA4602M
Contextual Info: Photo Detectors/Photo S3 • PIN Photodiodes for AF, CD, VD, Optical Communications, Control and Space Transmission Flat (Clear) 2 divisions Flat (Visible light cut) 2 divisions Flat (Visible light cut) 2 divisions Flat (Visible light cut) PSD Flat (Visible light

1k88

Abstract: PN3634 1R88 6N3P PNA4602M
Contextual Info: I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control II A p tr.tl e min. typ. lyp. typ. ( m A) (nm) (ns) (deg) PN3104 Flat (Clear) PSD 30 2 2 2 940 8 a 65 PN3106(N) Flat (Clear) PSD 30 2 13 940 5 u Flat (Clear) 2 PN3206

PN126S

Abstract: ON1503 PN7103
Contextual Info: Photo Detectors/Photo Couplers • PIN Photodiodes for AF, CD, VD, Optical ■ Phototransistors Communications and Control A p tr.ti II Appli­ Package VB Id min. typ. typ. cations Type No. Construciton No. (V) max. (nA) (nm) (ns) PN312C(N) Flat (Clear) 2 division 037 30 20 10 900 10

PN7103

Abstract: pf204 mr03 C302 C5031 PNA4602M ON1501 PN334 PN106 PNA4602
Contextual Info: Photo Detectors/Photo Couplers I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control Appli cations Type No. Flat (Clear) 2 division PF204-3 PN3104 Flat (Clear) PSD PN3106(N) tr.tf typ. (ns) typ 10 PF004-5 22 940 8 Flat (Clear) PSD

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

PNZ335

Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Contextual Info: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)

zjy 2b

Abstract: IT9010 LN62S PN120S PN121S PN123S T-9856 UCA 1400
Contextual Info: PANASONIC INDL/ELEK-CSEMI} 7SC D | bT3SflSM □ O O c!flfll4 fl | _ 6 9 3 2 8 52 P ANASONIC IN D L * ELECTRONIC 72C 0 9 8 8 4 D PN120S PN120S I- H I - G l '> ij u y NPN rhh / S i NPN Phototransistor Optical Control Systems LN62S £<7 Mfrnt>-&T'7i-s h -f Matched