PS3904 Search Results

LTZM

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon M PS3904 COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Symbol Value Unit C ollector-Em itter Voltage VCEO 40 Vdc C ollector-Base Voltage VCBO 60 Vdc E m itter-Base Voltage Rating v EBO 6.0

PS6521

Abstract: MPS6 PS6520
Contextual Info: M AXIM UM RATINGS Symbol Rating NPN PNP Unit V CEO C o llector-B ase V o lta g e M P S 652 0, M PS6521 M PS 6 52 3 v CBO Em itter-B ase V o lta g e v EBO 4.0 Vdc C o lle c to r C u rre n t — C o n tin u o u s ic 100 m Adc Total D evice D issip a tio n Cw T^ = 2 5 T

Contextual Info: M AXIM UM RATINGS Symbol Value Unit C o lle cto r-E m itte r Voltage Rating VCEO 20 Vdc C ollector-Base Voltage VCBO 30 Vdc Em itter-Base Voltage vebo 5.0 Vdc lc 100 m A dc Symbol M ax Unit PD 225 mW 1.8 m W /DC RflJA 556 °C/W PD 300 mW 2.4 mW/°C RflJA 417

motorola an569 thermal

Abstract: AN569
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA G eneral Purpose T ransistor BCW 33LT1 N P N Silico n COLLECTOR 3 2 EMITTER C A S E 318-08, ST Y L E 6 S O T - 23 T O -2 3 6 A B MAXIMUM RATINGS Rating Sym bol Value Unit Collector- Emitter Voltage VC EO 20 Vdc Collector-Base Voltage

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

transistor bsw 67

Abstract: transistor BD139 PH 71 BC547 BSR512 BCY883 BSW 68 transistor BC548 Transistor 2N2219A Transistor BSX45 PHILIPS PN2222A
Contextual Info: Concise Catalogue 1996 P hilip s Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors GENERAL-PURPOSE LOW-FREQUENCY BIPOLAR TRANSISTORS ratings type num ber P,o. max. mW hpE @ min./max. (V) 'c max. (mA) BC107

MPS3904

Abstract: BCW71L BCW72L
Contextual Info: MOTORCLA SC " 12E O I XSTRS/R F Sym bol Value Unit ' Collector-Emitter Voltage VCEO 45 Vdc Collector-Base Voltage Vc b o 50 Vdc Emitter-Base Voltage Vebo 5.0 Vdc ic 100 mAdc Sym bol M ax Unit PD 225 mW 1.8 mVW’C Rdja .556 °C/W Po “ 300 mW 2.4 m W /X Ra j a

Contextual Info: 1EE D I M A X I M U M R A T IN G S Sym bol Value Unit Collector-Emitter Voltage VCEO 20 Vdc Collector-Base Voltage VCBO 30 Vdc Vebo 5.0 Vdc Rating Emitter-Base Voltage ic Collector Current — Continuous MOTOROLA SC mAdc . 100 Sym bol M ax PD 225 mW 1.8 m w rc

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

MJ2955 equivalent

Abstract: MPS3640 equivalent 276-2043 MPS918 equivalent 276-2027 2N3053 equivalent MJE34 pnp 2SB22 2N3055 equivalent 2N3819 equivalent
Contextual Info: TRANSISTORS BIPOLAR Direct Commercial Equivalent C atalog N um ber M at. Appli. Polarity Pow er Diss. fT Typ ica l @ 25° c: M Hz Free Air v EBO V v CBO VCEQ V V >C Max hFE Max 5>v c e : V 'C B O at max mA VCB Case style 276-2001 ÏN 1 3 0 4 G s NPN 150m W

ph 4148

Abstract: f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Conversion List CONVERSION LIST FROM LEADED TO SMD TYPE LEADED SMD LEADED SMD B A 2 43 BA T18 BA W 62 BAW 56 B A 3 14 B A S 17 BA W 62 BAW 56W B A 4 80 BA T17 B A X 12 BAS29 BA481 BA T17 B A X 12 BA S31

Contextual Info: MOTOROLA O rder this docum ent by MMBT3416LT3/D SEMICONDUCTOR TECHNICAL DATA G e n e r a l P u rp o s e A m p lifie r M M BT3416LT3 NPN Silicon COLLECTOR 3 BASE V n* J 2 2 EMITTER CASE 3 1 8 -0 8 , STYLE 6 S O T -2 3 T O —236AB MAXIMUM RATINGS Rating Sym bol

MPS3904 transistor

Abstract: MPS3904
Contextual Info: • bbS a' îBl □ 0 2 7 T tì3 3D1 H A P X N AMER P H I L I P S / D I S C R E T E PS3904 b'îE J> SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistors in plastic TO-92 envelopes, prim arily intended fo r industrial applications e.g. Telecom . Q UICK REFERENCE D A T A

Contextual Info: M AXIM UM R A TIN G S Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Vdc Rating VEB0 6.0 Collector Current — Continuous 'C 100 mAdc Total Device Dissipation a T a = 25°C Derate above 25°C Pd 625 5.0 mW m w rc