MPS6520 Search Results

2n2222 to-92

Abstract: 2N4970 MPS3393 2N2219 transistor PN2218 2n2222 to92 2N4954 FR 9024 MMBT3704 PN2219
Contextual Info: NATL SEMICOND DISCRETE H2E D M T -Z l-ai t,SD1130 0D37772 3 • NPN General Purpose Transistors by Ascending Vceo (continued) Part Type MPS3393 MPS3394 MPS3395 MPS3396 MPS3397 MPS3398 MPS5172 MPS6515 MPS6520 MPS6521 MPS6522 MPS6560 PE4010 PE8050 PN3565 PN5135

ps6522

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D h h a i ^ l DOEfiDDS 7E1 M PS6522 M P S 6523 APX J V SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P small-signal transistors in plastic TO-92 envelope intended for low-noise applications in audio equipment. Complementary types are MPS6520 and MPS6521.

Contextual Info: MPS 6520 thru’ MPS 6523 COMPLEMENTARY r- SILICON TRANSISTORS MPS6520, MPS6521 NPN and MPS6522, MPS6523 (PNP) are complementary silicon planar epitaxial transistors designed for general purpose amplifier applications and for complementary circuitry. ABSOLUTE MAXIMUM RATINGS

MPS6522

Abstract: mps-6522 MPS6520 MPS6521 MPS6523
Contextual Info: il il u iv ir w wv/<.w COMPLEMENTARY SILICON TRANSISTORS MPS6520, MPS6521 NPN and MPS6522, MPS6523 (PNP) are complementary silicon planar epitaxial transistors designed for general purpose amplifier applications and for complementary circuitry. ABSOLUTE MAXIMUM RATINGS

2N3904

Abstract: MPS6520 10v200
Contextual Info: SAMSUNG SEMICONDUCTOR INC 1_*»E D MPS6520 j ? ci { , 4 1 4 2 0007325 fl | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veto=25V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=250C) r

MPS6522

Abstract: MPS6523 MPS6520 MPS6521
Contextual Info: MPS6522 MPS6523 V PHILIPS INTERNATIONAL SbE D I 711002b 00M25D4 H57 « P H I N - P 2 9 - Z / SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P small-signal transistors in plastic TO-92 envelope intended for low-noise applications in audio equipment. Complementary types are MPS6520 and MPS6521.

MPS6520

Abstract: MPS6521 MPS6523
Contextual Info: MPS6520 MPS6521 PHILIPS INTERNATIONAL S bE D 711DÛSti 0 Q 4 2 5 D 2 bö4 H P H I N SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N small-signal transistors in plastic TO-92 envelope intended for low-noise applications in audio equipment. Complementary types areMPS6522 and MPS6523.

MPS6522

Abstract: MPS6521 MPS6520 MPS6523
Contextual Info: N AMER PHILIPS/DISCRETE b'ìE D • bbS3T31 DOEÔGGS 721 I IAPX MPS6522 MPS6523 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P small-signal transistors in plastic TO-92 envelope intended fo r low-noise applications in audio equipment. Complementary types are MPS6520 and MPS6521.

MPS6523

Abstract: MPS6522 mps65 MPS6520 MPS6521
Contextual Info: MPS6520, MPS6521 NPN SILICON MPS6522, MPS6523 PNP SILIC O N C O M PLEM EN T A R Y A M P L IF IE R T R A N SIST O R S SILIC O N A N N U L A R T R A N SIST O R S . . . designed for general-purpose amplifier applications and for com ­ plementary circuitry.

MPS6522

Abstract: MPS6520 MPS6521 MPS6523
Contextual Info: MPS6520, MPS652.1, MPS6522, MPS6523 continued MPS6S20, MPS6521 (NPN) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit b v Ce o 25 — — Vdc bvebo 4.0 — Vdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage

Contextual Info: SAMSUNG SEMICONDUCTOR INC l^E 0 MPS6520 £ 7^134142 0 G Q 7 3 2 5 Ô | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veto=25V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) \ Characteristic

Contextual Info: FAIRCHILD SE MICONDUCTOR MPS6520/FTSG6S20 MPS6521/FTS06521 FAIRCHILD A Schlumberger Company NPN Small Signal General Purpose Amplifiers „p_ « V ceo . . . 25 V Min hFE . . . 100 (Min) (MPS/FTS06520), 1S0 (Min) (MPS/FTS06521) @ 100 pA e H fe . . . 200-400 (MPS/FTS06520), 300-600 (MPS/FTS06521)

MPSA52

Abstract: MPS6521 300TYP MPS6520 MPS6522 400TYP
Contextual Info: DataSheat MPS6520 MPS6521 C G IK K I1 Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 NPN SI LI CON TRANSISTOR Manufacturers of World Class Discrete Semiconductors JEDEC TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPS6520, MPS6521 typ es a re NPN S i l i c o n

MPS6520

Abstract: MPS6521 MPS6522 MPS6523 MPS 6520
Contextual Info: MPS 6520 thru’ MPS 6523 COMPLEMENTARY SILICON TRANSISTORS MPS6520, MPS6521 NPN and MPS6522, MPS6523 (PNP) are complementary silicon planar epitaxial transistors designed for general purpose amplifier applications and for complementary circuitry. ABSOLUTE MAXIMUM RATINGS

MPS6521

Abstract: MPS6523 MPS6520 mps-6521 mps6521 motorola
Contextual Info: MAXIMUM RATINGS Rating Symbol NPN PNP Unit C o lle cto r-E m itte r V o ltage MPS6520, MPS6521 MPS6523 v CEO Collector-Base Voltage MPS6520, MPS6521 MPS6523 VCBO Em itter-Base V o ltage vebo 4.0 Vdc C o lle ctor C u rrent — C o n tin u o u s 'c 100 m A dc

MPS6521

Abstract: MPS6520 MPS6523
Contextual Info: N AUER PHI LIP S/DISCRETE bTE D b b 5 3 ^ 3 1 00EÔ003 I «ÌST MPS6520 MPS6521 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N small-signal transistors in plastic T O -92 envelope intended f o r low-noise applica tio n s in audio equipm ent. C om plem entary typ e s areM PS 6522 and M PS6523.

25V7K

Abstract: 2N5220 MPS6512 MPS6513 MPS6514 MPS6515 MPS6520 MPS6521 MPS6530 MPS6531
Contextual Info: ROHM CO MOE LTD 7 ß 5 f l [m D DÜG32Ö0 I RHM 1 nasa mm* s * 7 ^ 7•-Ol . General Purpose Amplifiers and Switches Type 2N5220 MPS6512 MPS6513 MPS6514 MPS6515 MPS6520 MPS6521 Package BV cbo Bg.1 Min. TO-92 20V (EBC) TO-92 40V (EBC) TO-92 40V (EBC) TO-92

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: NPN TRANSISTORS T O -9 2 /T O -2 2 6 A A ‘2N ’ and ‘T F DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain *cao V C E fu t », Ic Device Max. Type mA) v V (8 R )C 6 0 V * (BR)EBO Max. (V) (V) (V) (nA) @ v CB (V) hFE hfE @ lc Min. Max. (m A)

MPS3709

Abstract: MPS3563 MPS3646 MPS3693 MPS3704 MPS3705 MPS3706 MPS3707 MPS3708 MPS3710
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. ^CBO (V) Min V CEO V ESO (V) Min (V) Min Electrical Characteristics (Ta=25°C, U nless Otherwise Specified) PD *c (W) (A) @Tc=25°c 'cBO ^CB (mA) 0 (V ) Max MPS3563 30 12 2 0.625 0.05 0.05 MPS3646

Contextual Info: I Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LÈAD CODE v CBO v CBO v CEO v EBO 'CBO (V) (V) (V) a v CE @ <c h F:E (V) (V) *CES (mA) VC E (S /IT) 'C (V) (mA) *hfe(1kHZ) MIN *VCES MIN MIN *ICEV MIN MAX Cob (pF) *C ,b MAX h NF

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2N915

Abstract: 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392
Contextual Info: 3M MOTORO LA SC { D I O D E S / O P T O 6367255 MOTOROLA SC »E | L3b?aSS 0 0 3 7 ^ 5 CD I O D E S / O P T O 34 C 37992 SILICON SM ALL-SIGNAL TRANSISTOR DICE continued) 2C3904 DIE NO. — NPN LINE SOURCE — DMB105 This die provides performance similar to that of the following device types:

Contextual Info: N AMER P H I L I P S / D I S C R E T E D BSE • T~-2’7~0I bl3S3T31 D O l b n a S ■ Small Signal Devices GENERAL PURPOSE AND SWITCHING TRANSISTORS - NPN TYPES TYPE PKG . bvc eo - te . • ^ /- : *T r >c - i _-iiiln : 2N1613 2N1711 2N1893 2N2218 2N2219