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    PTVA035002EV Price and Stock

    MACOM PTVA035002EV-V1-R0

    RF MOSFET LDMOS 50V H-36275-4
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    DigiKey PTVA035002EV-V1-R0 50
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    Mouser Electronics PTVA035002EV-V1-R0
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    Richardson RFPD PTVA035002EV-V1-R0 1
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    Infineon Technologies AG PTVA035002EVV1XWSA1

    RF MOSFET LDMOS H-36275-4
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    DigiKey PTVA035002EVV1XWSA1 Tray
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    MACOM PTVA035002EV-V1-R250

    RF MOSFET LDMOS 50V H-36275-4
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    DigiKey PTVA035002EV-V1-R250 Reel 250
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    Mouser Electronics PTVA035002EV-V1-R250
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    Richardson RFPD PTVA035002EV-V1-R250 1
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    PTVA035002EV Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTVA035002EV-V1-R0 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-36275-4 Original PDF
    PTVA035002EVV1R0XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-36275-4 Original PDF
    PTVA035002EV-V1-R250 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF LDMOS FET 500W, 390 - 450MHZ Original PDF
    PTVA035002EVV1XWSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF

    PTVA035002EV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LM7805ACH-ND

    Abstract: TL174 tl173 PTVA035002EV V1
    Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features


    Original     		PDF PTVA035002EV PTVA035002EV H-36275-4 a035002 50stances. LM7805ACH-ND TL174 tl173 PTVA035002EV V1

    ATC100B4R3CW500X

    Abstract: PTVA035002EV V1
    Text: PTVA035002EV Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down


    Original     		PDF PTVA035002EV PTVA035002EV a035002 ATC100B4R3CW500X PTVA035002EV V1

    TL244

    Abstract: CW 7805 LM7805ACH-ND tl173 TL235 TL138 TL251 TL148 TL170 tl134
    Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features


    Original     		PDF PTVA035002EV PTVA035002EV H-36275-4 TL244 CW 7805 LM7805ACH-ND tl173 TL235 TL138 TL251 TL148 TL170 tl134

    PTFB090901EA

    Abstract: No abstract text available
    Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original     		PDF PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF