PZT3906 Search Results

MMBT3906

Contextual Info: 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A

Contextual Info: Product specification PZT3906 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 -0.2 6.50 ● Collector Current: IC= -200mA +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● Collector Power Dissipation: PC=1W +0.2 0.90-0.2 +0.1 3.00-0.1 ● Complementary NPN Type Available PZT3904

model of 2n3906

Abstract: pr66 MMBT3906 2n3906 sot23 2N3906 MMBT3906 spice 2N3906 die 2n3906 equivalent 728p MMPQ3906
Contextual Info: 2N3906 MMBT3906 C E C B TO-92 SOT-23 E PZT3906 MMPQ3906 E B Mark: 2A B E SOIC-16 B E B E C B C C C C C C C C E C B SOT-223 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Sourced

smd transistor kn

Abstract: PZT3906
Contextual Info: •I bbSBTBl OQELDOb 6fl3 H A P X PZT3906 b?E T> N AUER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a microminiature SMD envelope SOT-223 . Designed prim arily fo r high-speed, saturated switching applications in industrial service.

Contextual Info: PZT3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking PZT3906 PZT3906 SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS

pzt3904

Abstract: SMD Transistor 070 R
Contextual Info: PZT3904 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking PZT3904 PZT3904 SILICON EPITAXIAL PLANAR NPN TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS PZT3906 APPLICATIONS

MMBT3906

Abstract: model of 2n3906 2N3906 MMBT3906 spice 2n3906 2a E5 sot223 MMBT3906 SOT-23
Contextual Info: 2N 39061 MMBT3906 I MMPQ39061 PZT3906 Discrete POW ER & Signal Technologies National Semi conduct or MMBT3906 2N3906 SOT-23 B M a rk : 2A PZT3906 MMPQ3906 SOT-223 SOIC-16 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch­

PZT3906

Contextual Info: PZT3906 PZT3906 SOT-223 TRANSISTOR PNP FEATURES Power dissipation PCM: 1 1. BASE W (Tamb=25℃) 2. COLLECTOR 3. EMITTER Collector current A ICM: -0.2 Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

2SA1402E

Abstract: 2SC2224 2SA1371E
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 30 i:;:'''', .U(U 2SA1407E 2SA1407F 2N2894 KF3509 2N3209 2N3209L PZT3906 RXT3906 RXT3906 2SA1404D 2SA1404E 2SA1404F 2SA1541 2SA1476 2SA964 2SC2224 BFN19 ~~~J~A 35 40 2SA795 MJ373B 2N6424 MJ3739 2N6425

BP317

Abstract: PZT3904 PZT3906
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZT3906 PNP switching transistor Product specification Supersedes data of 1997 May 27 1999 Apr 14 Philips Semiconductors Product specification PNP switching transistor PZT3906 FEATURES PINNING • Low current max. 100 mA

3906 TRANSISTOR npn

Abstract: 1N916 PZT3904 PZT3906 VPS05163
Contextual Info: PZT3906 PNP Silicon Switching Transistor
High DC current gain: 0.1mA to 100mA 4
Low collector-emitter saturation voltage
Complementary type: PZT3904 NPN 3 2 1 Type Marking PZT3906 ZT 3906 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings

MMBT3906 SOT-23

Contextual Info: • S ^M S C Q N O U C T C H R - 2N3906 MMBT3906 SOT-23 B Mark: 2A MMPQ3906 PZT3906 PNP General Purpose Amplifier This device is designed for general purpose am plifier and switching applications at collector currents of 10 |^A to 100 mA. Sourced from Process 66.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZT3906 SOT-223 TRANSISTOR PNP FEATURES Power dissipation PCM: 1 1. BASE W (Tamb=25℃) 2. COLLECTOR 3. EMITTER Collector current ICM: -0.2 A Collector-base voltage

Contextual Info: • t.tS3^31 DDEbOOb fifl3 N AUER PHILIPS/DISCRETE APX PZT3906 b?E ]> J V. SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a microminiature SMD envelope SOT-223 . Designed primarily fo r high-speed, saturated switching applications in industrial service.

2n3906 2a

Abstract: TR 3906 PNP SM SOT-23 EBC 2n3906 sot23 2N3906 2N3906TAR 2N3906BU 2N3906 EBC 2N3906 SOT 23 2A 3906
Contextual Info: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Features • This device is designed for general purpose amplifier and switching applications at collector currents of 10 A to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 Absolute Maximum Ratings*

1N916

Abstract: PZT3904 PZT3906 VPS05163
Contextual Info: PZT3904 NPN Silicon Switching Transistor
High DC current gain: 0.1mA to 100mA 4
Low collector-emitter saturation voltage
Complementary type: PZT3906 PNP 3 2 1 Type Marking PZT3904 ZT 3904 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings

PZT3906T1

Contextual Info: PZT3906T1 Preferred Device General Purpose Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO - 40 Vdc Collector - Base Voltage VCBO - 40 Vdc Emitter - Base Voltage VEBO - 5.0 Vdc IC - 200 mAdc Symbol Max Unit

Contextual Info: 2N3906 / MMBT3906 F A IR C H IL D S E M IC O N D U C T O R tm 2N3906 ' BE # TO-92 SOT-23 / PZT3906 C MMBT3906 B Mark: 2A PZT3906 B SOT-223 PNP General Purpose Amplifier This device is designed for general purpose am plifier and switching applications at collector currents of 10 ¡iA to 100 mA. Sourced

transistor bel 187

Abstract: bel 187 transistor of bel 187 transistor configuration bel 187 transistor BEL 187 transistor current gain 2N3906BU fairchild 2N3906BU 2N3906RA 2N3906 pnp transistor 2n 3906
Contextual Info: MMBT3906 PZT3906 C C E E C B C TO-92 E SOT-23 B B SOT-223 Mark: 2A PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

transistor SMD 3906

Abstract: transistor 3906 smd P008B SMD Transistor 070 R 3906 SOT-223 transistor 3906 SMD component PZT3904 PZT3906 SMD Transistor 65 S 50 transistor pnp 3906
Contextual Info: PZT3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking PZT3906 3906 SILICON EPITAXIAL PLANAR PNP TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS PZT3904 APPLICATIONS

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors SOT-223 PZT3906 TRANSISTOR PNP FEATURES  Low Voltage and Low Current  Complementary to PZT3904  General Purpose Amplifier and Switch Application 1. BASE 2. COLLECTOR

Contextual Info: Transistors IC SMD Type PNP General Purpose Amplifier PZT3906 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 -0.2 6.50 ● Collector Current: IC= -200mA +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● Collector Power Dissipation: PC=1W +0.2 0.90-0.2 +0.1 3.00-0.1

Contextual Info: Product specification PZT3904 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 6.50 ● Collector Power Dissipation: PC=1W ● Collector Current: IC= 200mA +0.1 3.00-0.1 +0.15 1.65-0.15 • Features Unit: mm +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 ● Complementary PNP Type Available PZT3906

FLC 100

Abstract: 728p cny 76 200U 2N3906 MMBT3906 MMPQ3906 PZT3906 SOIC-16
Contextual Info: 2N39061 MMBT39061 MMPQ39061 PZT3906 & Discrete POWER & Signal Technologies National Semiconductor” MMBT3906 2N3906 SOT-23 B Mark: 2A MMPQ3906 PZT3906 SOT-223 SOIC-16 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch­