2N2894 Search Results

m 60 n 03 g10

Contextual Info: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60

Contextual Info: M aximum R atings Type No. E lectrical C haracteristics Ta=25"C, Unless O ttw w iM SpacHted hFE e Min Max 15 20 0.36 0.005 15 35 0.36 0.025 10 20 30 'ceo (V) Min CEO PD (V) Min (W) 0Tc=25°c 2N869 25 18 0.36 0.01 2N995 20 15 2N2696 25 25 2N2894 2N2906 2N2906A

2N5057

Abstract: JAN2N706A 2n5456
Contextual Info: TRANSISTORS—SMALL SIGNAL NPN HIGH SPEED SATURATED SWITCHING TRANSISTORS BY ASCENDING VcEO METAL PACKAGE (toff ) ns @ IQ 2N834 M AX mA @ *C MIN - M A X mA TC 25°C MHz pF Ta 25°C mA MIN M AX mW W Package Complement 0.25 @ 10 350 4.0 300 1.0 TO-18 2N2894A

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D • bhS3T31 QD2fllDfl 311 P h ilip s S e m ic o n d u c to rs 2N2894A D a ta sheet statu s Preliminary specification d a te o f issue December 1990 Silicon switching transistor QUICK REFERENCE DATA PARAMETER SYMBOL MIN. CONDITIONS

Contextual Info: m 2N2894A \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2894A is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 200 mA lc V 12 V cb P diss 1.2 W @ Tc = 25°C Tj -65 to +200 °C T -65 to +200 °C stg 146 °C/W 0JC CHARACTERISTICS

"Dual PNP Transistor"

Abstract: 2N2894 2N2894DCSM
Contextual Info: 2N2894DCSM DUAL HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm inches 3 1 4 4.32 ± 0.13 (0.170 ± 0.005) 2.54 ± 0.13 (0.10 ± 0.005) 2 A 6 5 FEATURES 1.40 ± 0.15

ic 4078

Abstract: IC 4078 DATASHEET 2N2894ACSM 2N2894A
Contextual Info: 2N2894ACSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL PNP

2N2894A

Contextual Info: 2N2894A Bipolar PNP UHF/Microwave Transisitor 2.00 Transistors U. 1 of 1 Home Part Number: 2N2894A Online Store 2N2894A Diodes Bipo lar PNP UHF / M icro w av e Trans is it o r Transistors Enter code INTER3 at

2N2894AC1

Abstract: LE17 MIL-PRF19500 QR217 marking l3d sot23
Contextual Info: HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available

2N2894

Abstract: 12v switching transistor 2n2894 transistor 2N2894A 036w
Contextual Info: 2N2894 PNP SILICON TRANSISTOR MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) FEATURES 4.95 (0.195) 4.52 (0.178) • SILICON PNP TRANSISTOR 5.33 (0.210) 4.32 (0.170) • HIGH SPEED, LOW SATURATION SWITCH 12.7 (0.500) min. APPLICATIONS:

Contextual Info: 2N2894ACSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL PNP

2N2894A

Abstract: 2N2894ACSM
Contextual Info: 2N2894ACSM HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.

Contextual Info: 2N2894 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)12 I(C) Max. (A)200m Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.150

2SA1402E

Abstract: 2SC2224 2SA1371E
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 30 i:;:'''', .U(U 2SA1407E 2SA1407F 2N2894 KF3509 2N3209 2N3209L PZT3906 RXT3906 RXT3906 2SA1404D 2SA1404E 2SA1404F 2SA1541 2SA1476 2SA964 2SC2224 BFN19 ~~~J~A 35 40 2SA795 MJ373B 2N6424 MJ3739 2N6425

2N4423

Contextual Info: TYPE 2N4423 P-N-P SILICON TRANSISTOR B U L L E T I N N O . D L -S 6 8 9 1 2 4 , A U G U S T 1 9 6 6 - R E V I S E D M A Y 1 9 6 6 SILECTf TRANSISTOR FOR HIGH-SPEED SWITCHING APPLICATIONS • Electrically Similar to the 2N2894 • Rugged, One-Piece Construction with Standard TO-18 100-mil Pin Circle

2N3409

Abstract: 2N2538 2N2539 2N3303 2N3723 2N27S 2N3426 2N4873 2N3444 2N2501
Contextual Info: 8134693 40 S E M I CO A HIGH SPEED LOGIC SW ITCHES C ont’d Electrical Characteristics @ 25°C Maximum Ratings Type NPN PNP 2N3059 2N5187 2N706B/46 2N2894 2N3011 2N3261 2N4873 2N2501 2N3508 2N3829 2N703 2N560 2N2538 2N2539 2N2540 2N2787 PD Ambient mW VCB

PW 2N

Abstract: 2N2894 2n320 2N3209
Contextual Info: 2N2894 2N3209 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and 2N3209 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case, intended for high speed, low saturation switching applications up to 100 mA. Products approved to CECC 50004-022/023

2N2894A

Abstract: 1455
Contextual Info: 2N2894A Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 12V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

2N2894

Abstract: 2N2894DCSM
Contextual Info: 2N2894DCSM DUAL HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm inches 3 1 4 4.32 ± 0.13 (0.170 ± 0.005) 2.54 ± 0.13 (0.10 ± 0.005) 2 A 6 5 FEATURES 1.40 ± 0.15

2n2894

Abstract: 3209
Contextual Info: SGS-THOMSON Rfl0» [iyiM !0 gi 2N2894 2N3209 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and 2N3209 are silicon planar epitax­ ial PNP transistors in JedecTO-18 metal case, in­ tended for high speed, low saturation switching ap­ plications up to 100 mA.

2N2696

Abstract: 2N2894 2N2906 2N2906A 2N2907 2N2907A 2N3250 2N3250A 2N3251 2N3496
Contextual Info: 1 TO-18 Metal-Can Package Translate*« PNP Maximum Ratings Type No. 2N2696 2N2894 2N2906 Vcbo (V) Min ^CEO ^EBO (V) Min (V) Min 25 25 12 60 12 40 Pd (W) Tc=25°c 0.36 4 5 0.36 0.4 Electrical Characteristics (Ta=25*C, Unless Otherwise Specified) 'cm (A)

2N2894A

Abstract: C 2OO transistor
Contextual Info: 2N2894A SILICON NPN TRANSISTOR DESCRIPTION: The 2N 2894A is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO - 52 MAXIMUM RATINGS Ie 200 mA Vc b 12 V Pd is s 1.2 W @ Te ! 25°C Tj -65 to +200 °C Ts t g -65 to +200 °C 146 0C/W

Contextual Info: 2N2894A Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 12V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440