QSC11X Search Results

L14LOI

Abstract: l14lti QSC11X H23LOI QSD12X QSD72X H23LOB
Contextual Info: MATCHED EMITTER/PHOTOSENSOR PAIRS Phototransistor/LED Pairs QPA1223 L14PX 96 F5DX (95) 20 mA/5V/.250” 7.5 - mA QPC1213 QSC11X (93) QEC12X (91) 20 mA/5V/.250” 5.0 - mA 30 QPD1223 QSD12X (93) QED12X (91) 20 mA/5V/.250” 10.0 - mA 30 QPD5223 QSD72X (93)

QSC11X

Contextual Info: . % oiï^mTÎÎTs PLASTIC SILICON photo transistor QSC112/113/114 PACKAGE DIMENSIONS DESCRIPTION Th e QSC11X is a silicon phototransistor en capsulated in an infrared transparent, black T-1 package. FEATURES • Tight production distribution. ■ Steel lead fram es for im proved reliability in solder

Contextual Info: CîXJ PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS QSC112/113/114 .126 3.20 .106(2.69) — _L L -EMITTER .042 (1.07) J ±.010 (±.25) t .800 (20.3) MIN I I f -COLLECTOR / .050 (1.27)'J REF I II r .203(5.16) .183(4.65) 0.30 (0.76) NOM The QSC11X is a silicon phototransistor encapsulated in

C11351

Contextual Info: ] • PLASTIC SILICON PHOTOTRANSISTOR optoelectronics QSC112/113/114 DESCRIPTION PACKAGE DIMENSIONS The QSC11X is a silicon phototransistor encapsulated in an infrared transparent, black T-1 package. FEATURES Tight production distribution. Steel lead frames for improved reliability in solder

QEC121

Contextual Info: EU AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC121/122 126 3.20 REFERENCE SURFACE T h e Q EC 12X is an 8 8 0 nm AIG aA s LED encapsulated in a clear, purple tinted, plastic T-1 package. FEATURES Tight production Ee distribution. Steel lead fram es for im proved reliability in solder

Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC112/113 PACKAGE DIMENSIONS DESCRIPTION .126 3.20 .106 (2.69) REFERENCE SURFACE r .203 (5.16) .183(4.65) .030 (0.76) NOM _L .042 (1.07) X ±.010 (±.25) CATHODE t .800 (20.3) MIN 1 I .050 (1.27) REF I The QEC11X is a 940 nm GaAs LED encapsulated in a

24CT

Contextual Info: Fa OPTOELECTRONICS AIGaAs INFRARED EMITTING DIODE QEC121/122 PACKAGE DIMENSIONS DESCRIPTION The Q E C 12X is an 88 0 nm AIG aA s LED en capsulated in a clear, purple tinted, plastic T-1 package. FEATURES • Tight production Eedistribution. ■ Steel lead fram es for im proved reliability in solder

Contextual Info: QEC112, QEC113 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 940nm The QEC11X is an 940nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package. ■ Chip material = GaAs ■ Package type: T-1 3 mm ■ Can be used with QSCXXX Photosensor

QEC123

Abstract: QEC121 QEC122
Contextual Info: PLASTIC INFRARED LIGHT EMITTING DIODE QEC121 QEC122 QEC123 PACKAGE DIMENSIONS 0.116 2.95 REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) CATHODE 0.100 (2.54) NOM 0.155 (3.94) SCHEMATIC 0.018 (0.46)

H23LOI

Abstract: H23LOB L14LOI
Contextual Info: EO OPTOELECTRONICS MATCHED EMITTER/PHOTOSENSOR PAIRS Sensor LED Test F a m ily F am ily C o n d itio n s p a g e # I p a g e #) Part Num ber B V ceo (V ) 'C(ON) i f/ v c e / d m in m ax un its m in Phototransistor/LED Pairs QPA1223 L14PX (96) F5DX (95)

QED122

Abstract: QEC121 QEC122 QED121 QED123 diode 465 nm 5 mm tinted radiant energy
Contextual Info: r*T | m m É éiìwiììbA ^ S ü J H i OPTOELECTRONICS AIGaAs INFRARED EMITTING DIODE QEC121/122 PACKAGE DIMENSIONS DESCRIPTION The QEC12X is an 880 nm AIGaAs LED encapsulated in a clear, purple tinted, plastic T-1 package. FEATURES • Tight production Eedistribution.

QSC112

Abstract: QSC113 QSC114
Contextual Info: [•9 PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS QSC112/113/114 DESCRIPTION PACKAGE DIMENSIONS .126 3.20 .106 (2.69) REFERENCE SURFACE. L -EMITTER t J \ FEATURES Tight production distribution. Steel lead fram es for im proved reliability in solder mounting.

ST2130

Abstract: QSC113 QEC11X QSC112 diode 465 nm 5 mm tinted
Contextual Info: fey GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC112/113 DESCRIPTION PACKAGE DIMENSIONS .126 3.20 .106 (2.69) R EFER EN C E SU RFACE Th e QEC11X is a 94 0 nm GaAs LED encapsulated in a clear, peach tinted, plastic T-1 package. r .203 (5.16) .183 (4.65)

H23LOB

Contextual Info: OPTOELECTRONICS P a rt N u m b e r!2 MATCHED EMITTER/PHOTOSENSOR PAIRS Sensor F a m ily Test C o n d itio n s LED F a m ily B V ceo u n its V ) m in mA 30 lc (O N ) I f /V c e <D(1) m in m ax Phototransistor/LED Pairs QPA1223 L14PX F5DX 20 mA/5V/.250”

QEC112

Abstract: QEC113 QEC11X QSCXXX
Contextual Info: QEC112, QEC113 Plastic Infrared Light Emitting Diode Features Description • ■ ■ ■ ■ ■ ■ The QEC11X is an 940 nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package. λ = 940 nm PACKAGE DIMENSIONS Chip material = GaAs Package type: T-1 3 mm

Contextual Info: QEC121, QEC122, QEC123 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 880nm The QEC121, QEC122 and QEC123 are 880nm AlGaAs LED encapsulated in a clear purple tinted, plastic T-1 package. ■ Chip material = AlGaAs ■ Package type: T-1 3mm

Contextual Info: E Q GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC112/113 DESCRIPTION PACKAGE DIMENSIONS .126 3 20 .106 (2.69) R EFER EN C E SU RFACE r .203 (5.16) 183(4.65) .030 (0.76) NOM J .0 4 2 (1 .0 7 ) ± 010 (± 25) I .8 0 0 (2 0 .3 ) MIN * 1 The QEC11X is a 940 nm GaAs LED encapsulated in a

QEC11X

Abstract: QEC112 QEC113 QSC112
Contextual Info: PLASTIC INFRARED LIGHT EMITTING DIODE QEC112 QEC113 PACKAGE DIMENSIONS 0.116 2.95 REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) CATHODE 0.100 (2.54) NOM 0.155 (3.94) SCHEMATIC 0.018 (0.46) SQ. (2X)

ST2130

Contextual Info: [*ö GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC112/113 DESCRIPTION PACKAGE DIMENSIONS 126 3.20 REFERENCE SURFACE 203 (5.16) 183(4.65) CATHODE J .042(1.07) ±.010 (±.25) .050 (1.27) REF t .800 (20.3) MIN >/ * * -ANODE J .018(0.46) SQ ±.003 (±0.08)'

Fairchild 902

Abstract: QEC121 QEC123 QEC122
Contextual Info: QEC121, QEC122, QEC123 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 880nm The QEC121, QEC122 and QEC123 are 880nm AlGaAs LED encapsulated in a clear purple tinted, plastic T-1 package. ■ Chip material = AlGaAs ■ Package type: T-1 3mm

QSCXXX

Abstract: GaAs 850 nm Infrared Emitting Diode QEC112 QEC113 QEC11X QEC113.0059
Contextual Info: QEC112, QEC113 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 940nm The QEC11X is an 940nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package. ■ Chip material = GaAs ■ Package type: T-1 3 mm ■ Can be used with QSCXXX Photosensor

QEC123

Abstract: QEC121 QEC122 QSC112
Contextual Info: PLASTIC INFRARED LIGHT EMITTING DIODE QEC121 QEC122 QEC123 PACKAGE DIMENSIONS 0.116 2.95 REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) CATHODE 0.100 (2.54) NOM 0.155 (3.94) 0.018 (0.46) SQ. (2X)