RFL1N15 Search Results

Contextual Info: y *“ * RFL1N12, RFL1N15 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Description Features 1A, 120V and 150V Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

5Q07

Abstract: RFP mosfets RFL1N12 RFL1N15 RFP2N12 RFP2N15 rfp1n12 ta9196 TA921
Contextual Info: Standard Power MOSFETs RFL1N12, RFL1N15, RFP2N12, RFP2N15 File N um ber 1444 N-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 Amperes 120 V — 150 V ro s o n : 1.75fi and 1.90 Features: • SOA is power-dissipation lim ited m Nanosecond sw itching speeds

AN7254

Abstract: AN7260 RFL1N12L RFL1N15L
Contextual Info: [ /Title RFL1N 12L, RFL1N1 5L /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, Logic Level, N-Channel Power MOSFETs, TO205AF) RFL1N12L, RFL1N15L Semiconductor 1A, 120V and 150V, 1.900 Ohm,

2N15

Abstract: RFL1N12 RFL1N15 RFP2N12 RFP2N15 RFP-zn rfp1n12
Contextual Info: G E SOLID STATE ' DE I3Û7SGA1 GDlfllOl M T □! 0! § SOLID STATE Standard Power MOSFETs " 01E .18101 d T ' 3 ? “0 9 RFL1N12, RFL1N15, RFP2N12, RFP2N15 File Number 1444 N-Channel Enhancement-Mode

fl911

Contextual Info: RFL1N12L RFL1N15L HARRIS August 1991 N-Channel Logic Level Power Field-Effect Transistors L2FET Package F e a tu re s TO-20SAF BOTTOM VIEW • 1 A, 1 2 0V and 150V • r DS(O N ) = 1 -9 ^ • Design O p tim ized for 5V G ate Drives GATE SOURCE • Can be Driven D irectly from Q M O S, N M O S, T T L Circuits

Contextual Info: RFL1N12, RFL1N15 HARRIS S E M I C O N D U C T O R 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1 A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

L52C

Contextual Info: RFL1N12 RFL1N15 2 H a rris N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 Features Package T O -2 0 5 A F • 1A, 120V and 150V • ros on) = 1.9fi GATE SOURCE • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

Contextual Info: RFL1N12, RFL1N15 S E M I C O N D U C T O R 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

RFP2N15L

Abstract: RFL1N12L RFL1N15L RFP2N12L TA9529 TA9528 rfp1n12
Contextual Info: Logic-Level Power MOSFETs RFL1N12L, RFL1N15L, RFP2N12L, RFP2N15L File Number N-Channel Logic Level Power Field-Effect Transistors L2 FET o 1 and 2 A, 120 V and 150 V rDs(on): 1.750 and 1.90 Feature*: • Design optimized for 5 volt gate drive ■ Can be driven directly from Q-MOS, N-MOS, TTL Circuits

RFL1N15

Abstract: AN7254 AN7260 RFL1N12 TB334
Contextual Info: RFL1N12, RFL1N15 Semiconductor 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

RFP2N12L

Abstract: RFL1N12L RFL1N15L RFP2N15L rfp1n12
Contextual Info: 387SÓ81 G E S O L I D S T A T e 'd Ï » F | 3 ö 7 S D f l l DDlfl4Sfl 3 l ~ D Logic-Level Power MOSFETs RFL1N12L, RFL1N15L, RFP2N12L, RFP2N15L File Number 1513 N-Channe Logic Level Power Field-Effect Transistors L2 FET)

buz11

Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
Contextual Info: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Contextual Info: W vys S RFL1N12L, RFL 1N15L S e m ico n d ucto r 7 1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 1A, 120V and 150V RFL1N12L TO -205AF RFL1N12L These are N-Channel enhancem ent mode silicon gate power field effect transistors specifically designed for use

field-effect transistors

Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
Contextual Info: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .

2N6901

Abstract: 2N6903 THOMSON DISTRIBUTOR RFL1N10L RFL2N05L RFM15N05L 2n6902 RFD14N05LSM RFD16N05L RFP14N05L
Contextual Info: _ THOMSON/ 5SE D DISTRIBUTOR • TDEtifi73 0G0S713 TCS< 4EB Power MOSFETs Logic Level - L2FETs — N-Channel Types N. Package Q Maximum Ratings BVpsS V >d s (A) 'DS(ON) O HMS e AS (mj) 50 2 4 15 14 16 25 50 0.75 0.60 0.14 0.100 0.047 0.047 0.22*

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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