2N15 Search Results

2N718

Abstract: SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613
Contextual Info: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for

2N1566

Contextual Info: TYPE 2N1566 N-P-N SILICON TRANSISTOR B U L L E T I N N O . D L -S 731 1 9 5 8 , M A R C H 1 97 3 FOR G E N E R A L PURPOSE A M P L IF IE R APPLICATIO N S • V B R C E O • ■ - 6 0 V Mi n • hpE - . - 60 to 200 mechanical data •absolute maximum ratings at 2 5 °C free-air temperature (unless otherwise noted)

2N3615

Abstract: 2n3614 2n3618 2N3612 2N3611 2N3616 2N3613 2N1542 Germanium Power 2N3617
Contextual Info: germanium power transistors 148 -~- - . T03/ See Pg. 147 for outline d PNP ALLOY TRANSISTORS 3.0 Amp BREAKDOWN VOLTAGES CUTOFF CURRENT h FE TYPE NUMBER @ @ VCB VCE VEB VCE Ic (A) Min. Max. VCB rnA 2N1539 2N1539A 2N1540 2N1540A 2N1541 2N1541A

2N1674

Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

Delco

Abstract: delco ic 180T2A 2SC1777 2N1556 2N5034 2N5035 180T2C MOTOROLA 2N1539 1405 Motorola
Contextual Info: POWER SILICON NPN Ic Item Number Part Number I C 5 10 20 25081 25081 SK3272 25015 2N5034 2N5034 2N5034 2N5035 .v :g~~~ 25 30 40514 B0197 B0197 B0243 B0291 B0291 B0291 151-05 ~~~:g~ 35 40 40542 2N6374 2SC2491 2SC2198 25016 25050 2N1512 40627 :g~~j 45 50 -

SCR GE C5u

Abstract: SCR C103 specification of IC 2N1597 scr c108 7N870 GE scr C5u scr C203 2N2346 SCR C106Y1 2N2322-29
Contextual Info: C3 GE TYPE 2N 877-81"1 JEDEC C1 03 C203 - 2N5060-64 C5 30-200 30 400 2N2322-29 C6 07 - 2N 2344-48 25-400 25-200 - C106 C107 C108 - - - 50 400 15-600 1 *« K . 15-600 2N1595-99,A ELECTRICAL SPECIFICATIONS 30-200 VOLTAGE RANGE ? 5 400 FORWARD CONDUCTION •t r m s :i Max. RM S on-state current (A

rca 2n2147

Abstract: 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 714 BFX69A BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 CX904 CX904 2SC943 2SC943 2SC943 KT503B BCW90B BCW90B 2N731 Manufacturer

2N1595

Abstract: 2N1599 2N1596
Contextual Info: COMSET SEMICONDUCTORS 2N1595 thru 2N1599 SILICON THYRISTOR Industrial-type, low-current silicon controlled rectifiers in a three-lead package ideal for printed-circuit applications. Current handling capability of 1.6 amperes at junction temperetures to 125°C

Contextual Info: 2N1526/33 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)24 I(C) Max. (A)10m Absolute Max. Power Diss. (W)80m Maximum Operating Temp (øC)100’ I(CBO) Max. (A)16uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

2N2243

Abstract: 2n2405
Contextual Info: Medium Power Amplifiers and Switches TYPE PO LA ­ CASE NO. RITY 2N1566 2N1613 2N1613A 2N1613B 2N1711 2N1711A 2N1711B 2N1889 2N1890 2N1893 2N1973 2N1974 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B

2N3555

Abstract: 2N4110 2n2344 2N1595 2n2009 2N6332 2N3005 2N4212 2N3003 2n6335
Contextual Info: SOLID SILICON CONTROLLED RECTIFIERS ON STATE CURRENT piv CASE — =£!!L 275mA 280mA 350mA 390mA 500mA 1.0A 1.3A TO-18 TO-18 TO-18 TO-18 TO-5 TO-18 TO-5 TO-5 TO-5 2N4212 2N2009 2N2322 2N2322A 2N2344 2N3027 2N3030 2N3555 2N4213 2N2010 2N1595 2N1595A 2N2028

MCR50S-2

Abstract: 2SF521 2N4152 cl07f
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 15 20 C203F 2SF521 BT149F BT149F 2N1930 NMB12S 2N409S 2N1595A S051E C205F <!N<!u1u MCR22-2 MCRSOS-2 CSF 2N2323A 2N2345 ID200 2N4213 2N2323 MCR190S-2 ~~~l~~ 25 30 2N6237 Tll0S-05 Tll07•05 DRA2A 2NS333

2N158

Contextual Info: 2N158 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N158 Availability Online Store Diodes

80N40

Abstract: 2N1546
Contextual Info: 2N1546 Ge PNP Power BJT 39.87 Transistors Transistors Bipolar Ge PNP Power Bipola. Page 1 of 1 Enter Your Part # Home Part Number: 2N1546 Online Store 2N1546 Diodes Ge PNP Pow er BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

MP2143

Abstract: AD162 2S8474 ad139 2N352 2N353 2N669 2N554 2N2282 2n555
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 10 >= NKT302A 2S8463 2S8474 PTC194 2N352 2N352 2N353 2N353 2N296 SK3052 ~~~~~A 15 20 2N256 NKT453 2N555 2N157 2N157A CK315 CK415 MN28 ~~f:16 25 30 NKT452 2N554 NKT415 NKT451 2N589 2N2061 2N2062 2N2063 ~~~~64

TO36 package

Abstract: 2N2076 pnp germanium to36 TO36 TO41 dtg1210a 2N2076A 2N1560 2N1970 germanium
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 - 25 30 >= 40 45 50 60 See Index See Index See Index See Index Germanium See Index See Index See Index See Index Germanium 15 15 15 15 15 15 15 15 15 15 ~~n~7 ~elnClex ~~ 2N1557A MP1557 2N2078 2N2078A

ASZ1017

Abstract: PTC155 MP1540 2N1532 2n2211 2N242 MP1542 MP280 germanium
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 - 10 20 25 30 MP1540 2N1540 MP1532 CDT1320 MP1537 2N297 2N297A CDT1311 ~~~~~~ COT1111A 40051 40421 40421 40421 MP1547 2N1547 2N1547A ~~~~r 35 40 MP1533 2N1531 2N463 2N1531A 2Nl182 2Nl159 2N3213 MP1538 ~~~~3~A

Contextual Info: 2N1507 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)

2N2992

Abstract: 23028 2N3016 JANTX2N3440
Contextual Info: Microsemi NPN Transistors Part Num ber NPN 2N4311 2N4305 2N4309 2N2222A 2N1506 2N1613A 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010 2N5092 2N5095 2N5097 2N5098 2N5099 2N3500 2N3501 2N3866 JAN2N3866 JANTX2N3866 JANTXV2N3866 2N1700 2N3016 2N2102 2N2102A 2N2102S

2N1595

Abstract: 2n1599 2N1595 MOTOROLA 2N1596
Contextual Info: 2N1595 thru S ilic o n Controlled Rectifiers 2N1599 Reverse Blocking Triode Thyristors These devices are glassivated planar construction designed for gating operation in mA/fiA signal or detection circuits. • Low-Level Gate Characteristics — Iq t = 10 mA Max @ 25°C

2n1596

Abstract: 2N1595 2N2325 2N1599 2N2322 2N2323 2N2324 CS18B CS18BZ 2N1595A
Contextual Info: SCRs Continued IT (AMPS) 1.0 o 1.6 @ TC ( C) 90 90 70 70 70 ITSM (AMPS) 10 10 15 15 15 CASE TO-18 TO-39 VRRM (VOLTS) 25 2N2322 50 2N1595 2N1595A 2N2323 100 2N1596 2N1596A 2N2324 150 200 2N2325 CS18B CS18BZ 2N1597 2N1597A 250 2N2326 2N2327 300 2N1598 2N1598A

2n2301

Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
Contextual Info: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74

transistor 5cw

Abstract: FSC-5961 2N1556A transistor 5cw 66 331a transistor 2N1553A 2N1554A transistor 5cw 33
Contextual Info: Ml I- S - l 9500/33JA EL A M EN D M EN T -2 29 January 197U SUPERSEDING A M EN D -1 15 June 1971 M ILITA R Y SPECIFICATIO N SEM ICO NDU CTO R DEVICE, TRANSISTOR, PNP, G ERM AN IU M TYPES 2N1553A through 2N1556A This amendment forms a part o f M ilitary S p ecification MIL-S-19i>00/331A (EL)

OC 74 germanium transistor

Abstract: 2N1500 pnp germanium transistor NEW JERSEY SEMICONDUCTOR uz
Contextual Info: oKr» 1 TT _c_i QKnn/1 W/ 16t/U 1 .Tuna 1967 SUPERSEDING MIL -S-19500/125B 3 Mav 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, SWITCHING TYPE 2N1500 This specification is m andatory for use by all D epart­ m ents and Agencies of the Department of Defense.