S0902 Search Results

SC522-M

Abstract: 60407 2SC520A 2SA499-M sc522 2SC512M 2SC519A m50801 SA512 2SC520A-M
Contextual Info: 1 .R lrfr O * » » * * ft VcBO m % # m % * m it m % VcEO % « V kbo T a = 25’C ) le Pc & Inui T, MAX (T c= 2512) MIN TYP VCR (V ) MS0801-60403 2 SA499-M F N P M S080I-60403 2SA50Ö-M I 'N P S0902—60581 2 S A 503-M P N P M S0902—60582 2 S A 5 1 0 -M

Contextual Info: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC

si4838

Contextual Info: Si4838DY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 25 0.004 at VGS = 2.5 V 20 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated

si7272

Contextual Info: New Product Si7272DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0093 at VGS = 10 V 25 0.0124 at VGS = 4.5 V 25 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • PWM Optimized

SI4430B

Abstract: si4430bd
Contextual Info: Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) 24 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested

Si4368DY

Abstract: Si4368DY-T1-E3
Contextual Info: Si4368DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.0032 at VGS = 10 V 25 0.0036 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Available • Extremely Low Qgd WFET Technology for

Si7489DP

Abstract: Si7489DP-T1-E3 Si7489DP-T1-GE3
Contextual Info: Si7489DP Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.041 at VGS = - 10 V - 28 0.047 at VGS = - 4.5 V - 28 VDS (V) - 100 Qg (Typ.) 54 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Si4866DY

Abstract: Si4866DY-T1-E3
Contextual Info: Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 17 0.008 at VGS = 2.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs

Si4430BDY

Abstract: Si4430BDY-T1-E3 Si4430BDY-T1-GE3
Contextual Info: Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) 24 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested

Si7852DP

Abstract: Si7852DP-T1-E3
Contextual Info: Si7852DP Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) ID (A) 0.0165 at VGS = 10 V 12.5 0.022 at VGS = 6 V 10.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®

Si7460DP-T1-GE3

Abstract: Si7460DP Si7460DP-T1-E3
Contextual Info: Si7460DP Vishay Siliconix N-Channel 60-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.0096 at VGS = 10 V 18 0.012 at VGS = 4.5 V 16 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs

Si4888DY

Abstract: Si4888DY-T1-E3 Si4888DY-T1-GE3
Contextual Info: Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.007 at VGS = 10 V 16 0.010 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Si7960DP

Contextual Info: Si7960DP Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 9.7 0.025 at VGS = 4.5 V 8.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®

Si7456DP-T1-E3

Abstract: Si7456DP Si7456DP-T1-GE3
Contextual Info: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC

Contextual Info: Si7148DP Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 75 0.011 at VGS = 10 V 28 0.0145 at VGS = 4.5 V 28 Qg (Typ.) 33 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Si4100DY

Abstract: Si4100DY-T1-E3 Si4100DY-T1-GE3 si4100
Contextual Info: Si4100DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.063 at VGS = 10 V 6.8 0.084 at VGS = 6 V 5.8 VDS (V) 100 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested

Contextual Info: Si4404DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0065 at VGS = 10 V 23 0.008 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: Si4864DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0035 at VGS = 4.5 V 25 0.0047 at VGS = 2.5 V 20 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated

SI7998DP-T1-GE3

Abstract: si7998dp si7998
Contextual Info: New Product Si7998DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0093 at VGS = 10 V 25 0.0124 at VGS = 4.5 V 25 0.0053 at VGS = 10 V 30 0.007 at VGS = 4.5 V 30 VDS (V) Channel-1 30 Channel-2 30 Qg (Typ.)

Si7445DP-T1-E3

Contextual Info: Si7445DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0077 at VGS = - 4.5 V - 19 0.0094 at VGS = - 2.5 V - 17 0.0125 at VGS = - 1.8 V - 15 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: Si4892DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.012 at VGS = 10 V 12.4 0.020 at VGS = 4.5 V 9.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • High Efficiency PWM Optimized

eaton el 198

Abstract: ITE circuit breakers "cross reference" WESTINGHOUSE motor life line westinghouse ITE circuit breakers wiring diagram STAR DELTA motor sequential starter Project Report of smoke alarm using IC 555 doc ITE/Gould relay j13 MTBF fit IGBT 1200 UNITROL 1000
Contextual Info: Electrical Sector Solutions Volume 3 Power Distribution and Control Assemblies Volume 3: Power Distribution and Control Assemblies Eaton Corporation Electrical Sector 1111 Superior Ave. Cleveland, OH 44114 United States 877-ETN-CARE 877-386-2273 Eaton.com

Contextual Info: Si4561DY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P-Channel - 40 ID (A)a RDS(on) (Ω) 0.0355 at VGS = 10 V 6.8 0.0425 at VGS = 4.5 V 6.2 0.035 at VGS = - 10 V - 7.2 0.047 at VGS = - 4.5 V - 6.2 Qg (Typ.)

Contextual Info: Si7956DP Vishay Siliconix Dual N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.105 at VGS = 10 V 4.1 0.115 at VGS = 6 V 3.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Low On-Resistance in New Low Thermal