Untitled
Abstract: No abstract text available
Text: H ig h p e r f o r m a n c e 256K X8/128K X16 5 V C M O S F la s h E E P R O M « II A S29F200 A 2 5 6 K X 8 / 1 2 8 K X 1 6 C M O S Flash EEPROM Preliminary information Features • S ector a rc h ite c tu re - One 16K; tw o 8K; one 32K; and three 64K byte sectors
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8/128K
AS29F200T-120TI
AS29F200B-5SSC
AS29F200B-70SC
AS29F200B-70SI
AS29F200B-90SC
AS29F200B-90SI
AS29F200B-120SC
AS29F200B-120SI
AS29F200T-S5SC
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Untitled
Abstract: No abstract text available
Text: Preliminary information Features • O r g a n iz a t io n : 5 1 2 K x 8 o r 2 5 6 K x 16 • L o w p o w e r c o n s u m p tio n • S e c to r a r c h ite c tu r e - 3 S m A m a x im u m re a d c u rre n t - 60 m A m a x im u m p ro g r a m c u rre n t - O n e 16K; tw o 8K; o n e 32K; a n d seven 64K b y te sectors
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OCR Scan
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PDF
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S29F4O0T-55TC
S29F4Q
-150T3
S29F400T-
9F400B
-150SI
S29F400T
-150SI
AS29F400B-5
S29F400T-5
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intel 29F
Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568
Text: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C AS7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256
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628127H
T7164
712S6
DT71Q08
1S61C64AH
LS61C2S6AH
IS61LV3216
S61C512
IS61C64
S61LV256
intel 29F
T7164
28F Intel
LV6416
4c4007
5B810
32kxS
62832
dram cross reference
T5C2568
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Untitled
Abstract: No abstract text available
Text: Hiyli P e r f o r m a n c i 1 •■ AS29F400 A S I 2 K x 8 / 2 S6 K X I 6 SV C M O S F l a s h F F P R O M S I 2 K x 8 / 2 5 6 K x l 6 CMOS Flush FFPROM Prelim inary inform ation Features • Organization: 512KX8 or 256KX16 • Sector architecture • L o w p o w e r c o n s u m p tio n
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OCR Scan
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PDF
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AS29F400
512KX8
256KX16
ip9F400T-1SOTC
AS29F400T-ISOU
AS29F400B-55SC
AS29F400B*
AS29F400B-70SI
AS29F400B-90SC
AS29F400B-90SI
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Untitled
Abstract: No abstract text available
Text: Preliminary information •■ S29F200 I I 5V 256KX8/128Kx 16 CMOS Flash EEPROM Features • Organization: 256Kx8 or 128K xl6 • Sector architecture - One 16K; two 8K; one 32K; and three 64K byte sectors - Boot code sector architecture—T top or B (bottom)
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OCR Scan
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PDF
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AS29F200
256KX8/128Kx
256Kx8
AS29F200B-70TC
AS29F200B-70TI
AS29F200T-70TC
AS29F200T-70TI
AS29F200B-70SC
AS29F200B-70SI
AS29F200T-70SC
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29f200-90
Abstract: 29F200 flash tcp 8111 D370 344c1 es 3880 fm AS29F200T
Text: H igh Performance 256K x8/128 « I6 X S29F200 Kl SV CMOS Flash FFPROM 2 M e g a b i t 5 V CMOS i-lash EEPROM Preliminary information Features • O rg a n iza tio n : 25 6 K x 8 o r 1 2 8 K x l 6 • Sector a rch itectu re - O n e 1 6K ; tw o 8K ; o n e 3 2 K ; a n d th r e e 6 4 K b y te s e c to rs
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OCR Scan
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PDF
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AS29F200
256Kx8/128
128Kxl6
29f200-90
29F200 flash
tcp 8111
D370
344c1
es 3880 fm
AS29F200T
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Untitled
Abstract: No abstract text available
Text: H i j j h P i - r f o r m a i K <.• L BB SV C M O S I la s h 1 I P R O M 2 A S 2 l> I ' 2 0 0 A S6K X 8/IZ8K x I6 6 K x 8 / I 2 8 K x 1 6 C M O S Jf /.isii I'I P K O M Preliminary information Features • Organization: 256KX8 or 128KX16 • Sector architecture
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OCR Scan
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PDF
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256KX8
128KX16
e-120TC
-120TI
S29F200B
-55SC
S29F200B-70SC
-90SC
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Untitled
Abstract: No abstract text available
Text: High Performance 512KX8 / 2 5 6 KX16 5V CMOS Flash EEPROM •■ | | AS29F400 II 5 Ï2 K X 8 /2 5 6 K X 1 6 CMOS Flash EEPROM Preliminary information Features • O rg a n iza tio n : 5 1 2 K X 8 o r 2 5 6 K x l 6 • L o w p o w e r c o n s u m p tio n
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OCR Scan
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PDF
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512KX8
AS29F400
-90SI
-120SI
S29F400B
-150SC
29F400B
-150SI
29F400T-70SC
S29F400T
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29f200-90
Abstract: AS29F200T
Text: Preliminary information Features • O r g a n iz a tio n : 2 5 6 K x 8 o r 1 2 8 K X 1 6 • L o w p o w e r c o n s u m p t io n • S e c to r a rc h ite c tu re - O ne 16K; tw o 8K; one 32K ; and three 64K byte sectors - Boot code sector architecture— T top or B (b o ttom )
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29F400-70
Abstract: 29f400 programming 29F400 9F400 29F400-90
Text: H ig h P erfo rm a n ce 512KX8/256KX16 5 V CMOS Flash EEPROM - A S29F400 II J ill r 5 1 2 K x 8 / 2 5 6 K x l 6 CMOS Flash EEPROM Preliminary information Features • O rganization: 5 1 2 K X 8 or 2 5 6 K x l 6 • Sector architecture - One 16K; two 8K; one 32K; and seven 64K byte sectors
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OCR Scan
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PDF
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AS29F400
512KX8/256KX16
S12KX8/256KX16
512KX8
256Kxl6
cycl9F400T-70TI
AS29F400T-90TC
AS29F400T-90TI
AS29F400T-120TC
AS29F400T-120TI
29F400-70
29f400
programming 29F400
9F400
29F400-90
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29F400-70
Abstract: programming 29F400 29f400 256KX16 AS29F400T-70S1 T00344 XX11110 JS2617 29F400-90
Text: A H i y l i P c r f o r n i a i H i' S I2K X 8/2S 6K X SV CM O S •■ I6 Flash F.FPR O M A S29F400 Î I 2 K X 8 / 2 5 6 K X 16 C M O S F l u s h F E P R O M Preliminary information Features • Organization: 512KX8 or 256KX16 • Sector architecture • Low pow er consum ption
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OCR Scan
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PDF
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AS29F400
512KX8
256KX16
wr-120TC
AS29F400T-150TC
AS29F400T-70TI
AS29F400T-90TI
AS29F400T-I20TI
AS29F400T-I50T1
AS29F400B-55SC
29F400-70
programming 29F400
29f400
256KX16
AS29F400T-70S1
T00344
XX11110
JS2617
29F400-90
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.5555b
Abstract: 29f200-90 29F200 flash AS29F200T
Text: Preliminary information Features • O rgan izatio n : 2 5 6 K x 8 o r 1 2 8 K X 1 6 • L o w p o w e r co n su m p tio n • S ecto r arch itectu re - 4 0 mA m axim um read current - One 16K; tw o 8K; one 3 2K; and three 64K byte sectors - 6 0 mA m axim um program current
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-120SI
-40009-A
.5555b
29f200-90
29F200 flash
AS29F200T
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Untitled
Abstract: No abstract text available
Text: H ig h P e r f o r m a n c e •■ S29F200 II 256KX8/128x I6 SV CM OS Flash FFPROM 2 M e g a b it 5V CM OS Flash EEPROM Preliminary information Features • O r g a n iz a tio n : 2 S 6 K x 8 o r 1 2 8 K x l 6 • L o w p o w e r c o n s u m p ti o n - 35 mA m a x im u m read c u rre n t
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AS29F200
256KX8/128x
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car ecu microprocessors
Abstract: 29f200-90 AS29F200T
Text: Hij>h Pi'rfornijMi i aa \S29I 200 A ¿ ' ¡ 6 k x 8 / l 2K K x l 6 SV CMOS Tl.isli H P ROM 2S6 K X 8 / I 2« Kx 16 CMOS Mush l-l.PKOM Preliminary information Features • O r g a n iz a tio n : 2 5 6 K x 8 o r 1 2 8 K x 16 • L o w p o w e r c o n s u m p tio n
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\S29I
9F200B-90SI
S29F200T-90SC
529F2U0T-90SI
AS29F2
529F20GT
AS29F200B-55SC
A529F200B-12U
B-120TI
-120TC
car ecu microprocessors
29f200-90
AS29F200T
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.5555b
Abstract: 29F200 29f200 70 ALG 2-72 29f200-90 165555H AS29F200T 6kX8 bit memory array
Text: A Hi” h IVrfnrm am r ¿ 5 6 k x 8 / I Z 8 K x 16 SV C M O S I la sh HB K IP R O M ASZ9I-200 Z ^ K x X / I 2 8 K x 1 6 C M O S ¡'l a s h I I P K O M Preliminary information Features • Organization: 256KX8 or 128KX16 • Sector architecture - O ne 16K; tw o 8K; on e 32K; and three 64K byte sectors
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OCR Scan
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t-200
256KX8
128KX16
55/70/90/120ns
AS29F200B-70TI
AS29F200B-90TC
AS29F200B-90T1
AS29F200T-70TC
AS29F200T-70TI
AS29F200T-907C
.5555b
29F200
29f200 70
ALG 2-72
29f200-90
165555H
AS29F200T
6kX8 bit memory array
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.5555b
Abstract: 29F200 29F200 flash AS29 29f200 70 08000h-OFFFFh 29F200-55 29f200-90 AS29F200T
Text: H ig h p e r f o r m a n c e 2 S 6 K X 8 /1 2 8 K X 16 5V CM OS Flash EEPROM a | S29F200 A 2 5 6 K X 8 /1 2 8 K X 1 6 CMOS Flash EEPROM Preliminaiy information Features • O r g a n iz a t io n : 2 5 6 K X 8 o r 1 2 8 K X 1 6 • S e c to r a r c h ite c tu r e
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OCR Scan
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PDF
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AS29F200
2S6KX8/128KX16
256KX8/128KX16
256KX8
128KX16
endur-90TÃ
AS29F200T-70TC
AS29F200T-70TI
AS29F200T-90TC
AS29F200T-90T1
.5555b
29F200
29F200 flash
AS29
29f200 70
08000h-OFFFFh
29F200-55
29f200-90
AS29F200T
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