AS7C164 Search Results

intel 29F

Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568
Contextual Info: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C AS7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256

as7c164-25pc

Abstract: 7C164-10
Contextual Info: AS7CNS4 AS7C164L Hitih-Perfornìanitì 8K xS CMOS SRAM & sV^'C KKx8 CMOS SRAM Common I/O IFEATURES Organization: 8,192 words x 8 bits Equal access and cycle times High speed - 10/12/15/20/25 ns address access time - 3/3/4/5/6 ns output enable access time

Contextual Info: AS 7CÌÓ4 OCTOBER 1999 SV 8K*8 C M O S SRAM Features Low power consumption: STANDBY - 11 mW AS7C164 / max CMOS I/O 2.0Ydata retention Easy memory expansion with CE1, CE2, OE inputs TTL-compatible, three-state 1/ O 28-pin JEDBC standard package - 300 mil PDIP and SOJ

Contextual Info: NOVEMBER 2009 AS7C164A 8K X 8 BIT HIGH SPEED CMOS SRAM FEATURES GENERAL DESCRIPTION Fast access time : 12/15 ns Low power consumption: Operating current : 110/100/90/80mA TYP. Standby current : 1mA (TYP.) Single 5V power supply All inputs and outputs TTL compatible

Contextual Info: NOVEMBER 2009 AS7C164A 8K X 8 BIT HIGH SPEED CMOS SRAM FEATURES GENERAL DESCRIPTION Fast access time : 12/15 ns Low power consumption: Operating current : 110/100/90/80mA TYP. Standby current : 1mA (TYP.) Single 5V power supply All inputs and outputs TTL compatible

Contextual Info: High Performance 8Kx8 CMOS SRAM II AS7C164 AS7C164L 8Kx8 CMOS SRAM Common I/O \F E A T U R E S • Organization: 8,192 words x 8 bits • Easy Memory Expansion with CE1, CE2 and OE Options • High Speed: 12/15/20/25 ns Address access time 3,4,5,6 ns Output Enable access time

as7c164

Contextual Info: H ig h P e rfo rm a n ce m 8KX8 RI AS7C164 A S7C I64L CMOS SRAM oa 8Kx8 CMOS SRAM Common I/O Features • Organization: 8,192 words x 8 bits • High speed - 8 / 1 0 / 1 2 / 1 5 / 2 0 ns address access time - 3 / 3 / 3 / 4 / 5 ns output enable access time

AS7C164-20PC

Contextual Info: AS7C164 June 2001 5V 8Kx8 CMOS SRAM Features • Low power consumption: STANDBY - 11 mW AS7C164 / max CMOS I/O • 2.0V data retention • Easy memory expansion with CE1, CE2, OE inputs • TTL-compatible, three-state I/O • 28-pin JEDEC standard package

SRAM 64KX8 5V

Abstract: 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40
Contextual Info: Pagenumber Produci Cross references. Il Ordering information. 13 AS7C164

AS7C164-20PC

Abstract: AS7C164 000DM 7C164-12 7C164-10
Contextual Info: H igh Perform ance AS7C164 AS7C.164L 8Kx8 CMOS SRAM A 8Kx8 CMOS SRAM Common I /O Features • Organization: 8,192 words x 8 bits • H igh speed - 8 / 1 0 / 1 2 / 1 5 / 2 0 ns address access time - 3 / 3 / 3 / 4 / 5 ns output enable access time • Low pow er consum ption

transistor sb 772

Abstract: 9726 28-pin SOJ SRAM 8282 ADDRESS LATCH datasheet CI 9762 AS7C164 AS7C164-10PC AS7C164-12PC AS7C164-8JC AS7C164-20PC
Contextual Info: High Performance 8Kx8 CMOS SRAM AS7C164 AS7C164L 8K×8 CMOS SRAM Common I/O Features • Organization: 8,192 words × 8 bits • High speed - 8/10/12/15/20 ns address access time - 3/3/3/4/5 ns output enable access time • Low power consumption - Active: 633 mW max (10 ns cycle)

Contextual Info: H igh P e rf o rm a n c e 8Kx8 CMOS SRAM II H AS7C164 AS7C164L A 8 K x 8 CM O S SRAM C o m m on I / O • O rganization: 8 ,1 9 2 w o rd s x 8 bits 2.0V data re te n tio n (L version) • H ig h speed Equal access a n d cycle tim es - 8 / 1 0 / 1 2 / 1 5 / 2 0 ns address access tim e

AAA1M304

Abstract: tc514256 UM6164 um6164b DYNAMIC RAM CROSS REFERENCE tc554256 M5M44C256 MB82005 NMB Semiconductor IS61C256A
Contextual Info: Cross Reference & Fast Static RAM Vendor Cypress Fujitsu Hitachi IDT ISSI Micron Mltsubish P/N Alliance P/N Description P/N Alliance P/N CY7C106 AS7C1028 256K x 4 MCM32A32 AS7M32D128 128K module CY7C185 AS7C164 8Kx8 MCM32A64 AS7M32D256 256K module CY7C188

Contextual Info: $6& 0D\  Š 9 .[ &026 65$0 HDWXUHV • Low power consumption: STANDBY - 11 mW AS7C164) / max CMOS I/O • 2.0V data retention • Easy memory expansion with CE1, CE2, OE inputs • TTL-compatible, three-state I/O • 28-pin JEDEC standard package

AS7C164

Contextual Info: $6& 0D\  Š 9 .[ &026 65$0 HDWXUHV • Low power consumption: STANDBY - 11 mW AS7C164) / max CMOS I/O • 2.0V data retention • Easy memory expansion with CE1, CE2, OE inputs • TTL-compatible, three-state I/O • 28-pin JEDEC standard package

DRAM 256 X 1, 18 PDIP

Abstract: 64K X 4 SRAM mmui
Contextual Info: A Contents Fast SRAM Low Voltage Fast SRAM Short Form 1995 AS7C164 8K x 8 3 AS7C256 32K x 8 4 AS7C259 32K x 9 5 AS7C512 64K x 8 6 AS7C1024 128K x 8 300/400 mil 7 AS7C1028 256K x 4 400 mil 8 AS7C3256 32K x 8 3.3V 9 AS7C3512 64K x 8 3.3V 10 AS7C31024 128K x 8

AS7C164

Abstract: AS7C164-12 AS7C164-12JC AS7C164-12PC AS7C164-15 AS7C164-15JC AS7C164-15PC AS7C164-20 AS7C164-20JC AS7C164-20PC
Contextual Info: 2&72% 5#4<<< $6:&497 89#;.[;#&026#65$0 HDWXUHV • Low power consumption: STANDBY - 11 mW (AS7C164) / max CMOS I/O • 2.0V data retention • Easy memory expansion with CE1, CE2, OE inputs • TTL-compatible, three-state I/O • 28-pin JEDEC standard package

Contextual Info: $6& 0D\  Š 9 .[ &026 65$0 HDWXUHV • Low power consumption: STANDBY - 11 mW AS7C164) / max CMOS I/ O • 2.0V data retention • Easy memory expansion with CE1, CE2, OE inputs • TTL-compatible, three-state I/ O • 28-pin JEDEC standard package

TAA103

Contextual Info: A 3 2 K x 8 Fast S R A M Features Logic Block Diagram ♦ High Performance CMOS: tAA=10-35 ns ♦ Fast OE access: t0 E=3-8 ns ♦ Low power - 660 m W @ 100 MHz - 11 mW @ 10 MHz standby - 2.75 mW @ 10 MHz standby: L version ♦ Automatic CE power down ♦ 2V data retention L version

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

Contextual Info: II High-Performance SKxS CMOS SRAM AS7CJ64 AS7CÎ64L 8Kx8 CMOS SRAM Common I/O FEATURES • Organization: 8,192 words x 8 bits Equal access and cycle times • High speed Very fast 3 ns output enable access time - 10/12/15/20/25 ns address access time Easy memory expansion with CE1, CE2, OE inputs

CS16LV40963

Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
Contextual Info: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D

1H08S

Abstract: PI6C2405A-1HW ASM706CUA SOIC-6 microchip ADM809RAR ADM705AN MAX809SEUR T ASM5P2309-1H-16-S K7N163601B MAX810JEUR
Contextual Info: Supervisors Cross Reference Guide Alliance Maxim/Dallas IMP ASM1232LP DS1232LPS-2 IMP1232LP ASM1232LPCMA DS1232LP IMP1232LPCMA ASM1232LPEMA DS1232LP IMP1232LPEMA ASM1232LPN DS1232LP IMP1232LPN Analog Devices Micrel Microchip MIC1232N TC1232CPA - - - - - -

Contextual Info: ÂS7CÏ64 AS7 C IÇ 4L CMOS SHAM 1F E A T U R E S • Organization: 8,192 words x 8 bits • Completely static memory. No clocks or timing strobe required. • Equal access and cycle times • Automatic power-down when de-selected • For high density, a slim 300 mil. 28-pin package