SBS004M
Abstract: marking SA
Text: Ordering number : ENN6907 SBS004M Schottky Barrier Diode SBS004M 15V, 1A Rectifier Applications • Package Dimensions High frequency rectification switching regulators, converters, choppers . unit : mm 1305 0.15 1 2.1 3 1.6 • 0.3 Low forward voltage (IF=0.5A, VF max=0.35V)
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ENN6907
SBS004M
SBS004M]
SBS004M
marking SA
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SBS004
Abstract: 62722
Text: Ordering number:ENN6272 Schottky Barrier Diode SBS004 15V, 1A Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1293 [SBS004] 2.9 · Low forward voltage (IF=0.5A, VF max=0.35V) (IF=1.0A, VF max=0.4V).
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ENN6272
SBS004
SBS004]
SBS004applied
SBS004
62722
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN6907 SBS004M Schottky Barrier Diode SBS004M 15V, 1A Rectifier Applications • Package Dimensions High frequency rectification switching regulators, converters, choppers . unit : mm 1305 0.15 1 2.1 3 1.6 • 0.3 Low forward voltage (IF=0.5A, VF max=0.35V)
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ENN6907
SBS004M
SBS004M]
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MCH3307
Abstract: SBS004 ENN8235 2171A
Text: CPH5838 Ordering number : ENN8235 CPH5838 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converters. Composite type with a P-Channel Sillicon MOSFET MCH3307 and a Schottky Barrier Diode (SBS004)
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CPH5838
ENN8235
MCH3307)
SBS004)
MCH3307
SBS004
ENN8235
2171A
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CPH5811
Abstract: MCH3406 SBS004 2171A marking QM
Text: CPH5811 Ordering number : ENN8234 CPH5811 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • Composite type with an N-Channel Sillicon MOSFET MCH3406 and a Schottky Barrier Diode (SBS004) contained in one package facilitating high-density mounting.
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CPH5811
ENN8234
MCH3406)
SBS004)
CPH5811
MCH3406
SBS004
2171A
marking QM
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Untitled
Abstract: No abstract text available
Text: CPH5701 PNP Epitaxial Planar Silicon Transistor DC-DC Converters Schottky Barrier Diode TENTATIVE Features • Composite type with transistors and Schottky Barrier Diode contained in package, facilitating high-density mounting. • The CPH5701 houses two chips,each being equivalent to the CPH3106/SBS004,in one package.
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CPH5701
CPH5701
CPH3106/SBS004
CPH5701-applied
100mASee
600mm
100mA
Duty10%
100mA
20IB1
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CPH5807
Abstract: MCH3309 SBS004
Text: CPH5807 Ordering number : EN7751B CPH5807 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • • • Composite type with a P-Channel Silicon MOSFET MCH3309 and a Schottky Barrier Diode (SBS004) contained in
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CPH5807
EN7751B
MCH3309)
SBS004)
CPH5807
MCH3309
SBS004
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MCH3406
Abstract: SBS004 CPH5811 2171A 4863s
Text: CPH5811 注文コード No. N 8 2 3 4 三洋半導体データシート N CPH5811 MOSFET : N チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード DC / DC コンバータ用 特長 ・N チャネル MOS 形電界効果トランジスタ MCH3406 とショットキバリアダイオード(SBS004)を 1 パッケージに
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CPH5811
MCH3406)
SBS004)
600mm2
22805PE
TB-00001212
IT00624
IT00623
MCH3406
SBS004
CPH5811
2171A
4863s
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TA-3102
Abstract: N6907 SBS004M
Text: 注文コード No. N 6 9 0 7 SBS004M No. N6907 21001 新 SBS004M ショットキバリアダイオード 15V, 1A 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。 特長 ・順電圧が小さい
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SBS004M
N6907
35VIF
100mA,
600mm2
IT02958
IT02957
IT02959
IT02960
TA-3102
N6907
SBS004M
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CPH5803
Abstract: MCH3405 SBS004M EN693
Text: CPH5803 Ordering number : EN6935B SANYO Semiconductors DATA SHEET CPH5803 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-Channel Sillicon MOSFET MCH3405 and a Schottky Barrier Diode (SBS004M)
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CPH5803
EN6935B
MCH3405)
SBS004M)
CPH5803
MCH3405
SBS004M
EN693
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CPH5807
Abstract: MCH3309 SBS004
Text: CPH5807 Ordering number : ENN7751 CPH5807 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • • • Composite type with a P-Channel Silicon MOSFET MCH3309 and a Schottky Barrier Diode (SBS004) contained in
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CPH5807
ENN7751
MCH3309)
SBS004)
CPH5807
MCH3309
SBS004
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CPH5821
Abstract: MCH3312 SBS004 marking qx
Text: CPH5821 Ordering number : ENN7701 CPH5821 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS004)
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CPH5821
ENN7701
MCH3312)
SBS004)
CPH5821
MCH3312
SBS004
marking qx
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CPH5808
Abstract: MCH3409 SBS004 77705
Text: CPH5808 Ordering number : ENN7770 CPH5808 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • • • Composite type with a N-Channel Silicon MOSFET MCH3409 and a Schottky Barrier Diode (SBS004) contained
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CPH5808
ENN7770
MCH3409)
SBS004)
CPH5808
MCH3409
SBS004
77705
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SEC 540
Abstract: SBS004
Text: SBS004 SPICE Parameter DIODE model : Diode Parameter IS N BV IBV RS ISR NR Value 29.0 u 1.01 20.0 1.00 m 84.0 m 24.0 u 1.20 Unit A V A ohm A Parameter CJO VJ M FC TT EG XTI TRS Value Unit 210.0 p F 0.54 V 0.52 0.50 4.00 n sec 540 m eV 2.00 3.20 m ohm/degree
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SBS004
SEC 540
SBS004
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62722
Abstract: SBS004 TA-2121
Text: 注文コード No. N 6 2 7 2 SBS004 No. 6 2 7 2 三洋半導体ニューズ 62599 新 SBS004 ショットキバリアダイオード 15V, 1A 整流素子 用途 ・スイッチングレギュレータ・コンバータ・チョッパ等の高周波回路整流用。
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SBS004
100mA,
600mm2
Duty10%
IT00624
IT00623
IT00622
IT00625
IT00626
62722
SBS004
TA-2121
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TA-3101
Abstract: No abstract text available
Text: CPH5803 Ordering number : ENN6935A CPH5803 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-Channel Sillicon MOSFET MCH3405 and a Schottky Barrier Diode (SBS004M)
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ENN6935A
CPH5803
MCH3405)
SBS004M)
TA-3101
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marking QJ
Abstract: CPH5808 MCH3409 SBS004
Text: CPH5808 Ordering number : ENN7770 CPH5808 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • • • Composite type with a N-Channel Silicon MOSFET MCH3409 and a Schottky Barrier Diode (SBS004) contained
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CPH5808
ENN7770
MCH3409)
SBS004)
marking QJ
CPH5808
MCH3409
SBS004
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F0511
Abstract: DS04-27232-3E MB39A102 VT100
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27232-3E ASSP For Power Management Applications DC/DC Converter for DSC/Camcorder 4-ch DC/DC Converter IC MB39A102 • DESCRIPTION The MB39A102 is a 4-channel DC/DC converter IC using pulse width modulation (PWM). This IC is ideal for up
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DS04-27232-3E
MB39A102
MB39A102
TSSOP-30P/BCC-32P
F0511
F0511
DS04-27232-3E
VT100
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SBS804
Abstract: ENN6595 SBS004
Text: Ordering number : ENN6595 SBS804 Schottky Barrier Diode SBS804 15V, 1A Rectifier Applications • Package Dimensions High frequency rectification switching regulators, converters, choppers . unit : mm 1294 [SBS804] • 0.6 2.8 0.05 2 0.95 0.4 0.7 4 0.15 3
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ENN6595
SBS804
SBS804]
SBS804
SBS004.
ENN6595
SBS004
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2SJ560
Abstract: CPH6801 SBS004 TA2492
Text: Ordering number:EN6419 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH6801 DC/DC Converter Applications Package Dimensions unit:mm 2172 [CPH6801] 5 4 0.6 6 0.2 0.15 2.9 2.8 0.05 0.6 • The CPH6801 consists of a P-channel MOSFET that features low ON resistance, ultrahigh-speed switching, and low-voltage drive, and a shottky barrier
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EN6419
CPH6801
CPH6801]
CPH6801
2SJ560
SBS004,
SBS004
TA2492
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on line ups circuit diagrams
Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Text: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm
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EP51E
CPH6605
MCH6613
ECH8609
CPH3424
CPH3427
K3614
FW343
FW356
FW360
on line ups circuit diagrams
2SK3850
242M
SSFP package
K3492
3ln03
MCH3435
CPH5612
three phase on line ups circuit diagrams
TN6R04
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SBS004M
Abstract: marking SA
Text: Ordering number : ENN6907 Schottky Barrier Diode SBS004M 15V, 1A Rectifier Package Dimensions unit : mm 1305 Applications • High frequency rectification switching regulators, converters, choppers . [S B S 004M ] Features • Low forward voltage (If =0.5A , V f m ax=0.35V)
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ENN6907
SBS004M
SBS004M]
SBS004M
marking SA
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN6272 Schottky Barrier Diode SBS004 IS A 0 O I 15V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Package Dimensions unit:mm 1293 [SBS004] Features • Low forward voltage (Ip=0.5A, Vp max=0.35V)
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ENN6272
SBS004
SBS004]
SBS004applied
rroo623
IT00024
QEH313
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CPH5802
Abstract: No abstract text available
Text: Ordering number : ENN6899 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5802 DC / DC Converter Applications Package Dimensions Features • Composite type with a P-Channel Sillicon MOSFET M CH3306 and a Schottky Barrier Diode (SBS004)
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ENN6899
CPH5802
CH3306)
SBS004)
CPH5802]
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