SFH402 Search Results

SFH 717

Abstract: SFH 291
Contextual Info: SIEMENS SFH400 SFH401 SFH402 GaAs INFRARED EMITTER Package Dimensions in Inches mm SFH400 .291 (7.4) .571 114.5) .492(125) » « -20415.2) J T -193(4.9) t o 0100 (2.54) “ ' i 18^ 751 iw? 0.018(0.45) .106 (2.7) Chip Location .220 f5.B) .208(5.3) N : Cathode

BPY 62

Abstract: SFH400
Contextual Info: SIEMENS SFH400 SFH401 SFH402 GaAs Infrared Emitter FEATURES • Half angle - SFH 400, ±6° - SFH 401, ±15° - SFH 402, ±40° • Fabricated In a liquid phase epitaxy process • Cathode is electrically connected to the case • High reliability • Radiant intensity selections

Contextual Info: SIEMENS SFH400 SFH401 SFH402 GaAs INFRARED EMITTER Package Dimensions in Inches mm SF H 400 .291 (7.4) .259 (6.6) .571 M4.5) .492(12.5) ,206 (5.3)' 197 (5.0) - i —E 0.100 _ C athode A T 0 .1 8 9 (4.B) 0.181 (4.6 (2.54) .018(0.45) 106 G lass Lens (2.7)

SFH460

Contextual Info: SIEMENS SFH400 SFH401 SFH402 GaAs INFRARED EMITTER FEATURES • Half Angle - SFH400, ±6° • • Long Lifetime SFH400/401: High Radiant intensity • • • • • • • SFH402: Wide Beam High Pulse Power Radiant Intensity Selections SFH400: Same Package as SFH460

Contextual Info: SIEMENS SFH400 SFH401 SFH402 GaAs INFRARED EMITTER • Half Angle - SFH400, ±6° - SFH401, ±15° - SFH402, ±40° • GaAs Infrared Emitting Diode, Fabricated in a Liquid Phase Epitaxy Process • Emits Radiation in Near Infrared Range • Cathode Electrically Connected to

SFH317-2

Abstract: SFH317-4 SFH501-2 SFH317F-4 sfh309-2 BP103-5 SFH309-3 BPY62-2 SFH317 LPT 80a
Contextual Info: Phototransistors Package Outline Part Typ* H«K Photocurrant Angl« XuSSOmn C ofttdor Emftter Vce-SV » V lreE(niA) SFH320-2 SFH320-3 L fc SFH320F-2 SFH320F-3 16-32 JiA SMTTOP-LED SMTTOPLED, daylight filter ±60” BP103B-4 SFH303-2 SFH303-3 SFH303-4 SFH303F-2

SFH400

Contextual Info: bOE D • 6E35bOS D D H b b n Dbl « S I E G SIEMENS SIEMENS ~{3 SFH480 SFH481 SFH482 AKTIENGESELLSCHAF GaAIAs INFRARED EMITTER Package Dimensions in Inches (mm SFH480 291 (7.4) 259(66) 571 114.5) 492(12 5) ¥ 0100 (2 54) 169(4 8) 181(4 6) 208(53) 197 (5)

CQY78

Abstract: CQY77 CQY78 IV CQY77A DIN5033 BPW33 germanium photodiode PIN phototransistor 600 nm solar cell transistor infrared photodiode germanium
Contextual Info: General IR and Photodetector Information Appnote 37 1. Detectors Radiation-sensitive Components Charge Carrier Generation in a Photodiode Figure 1 shows the basic design of a planar silicon photo-diode with an abrupt pn transition. Due to the differing carrier concentrations, a field region free of mobile carriers, the space charge

8PX43

Abstract: SFH415T GKDb L81a SFH402-2 SFH910 SFH485 SFH462 sfh481-3 LD275
Contextual Info: Infrared Emitters Radiant Intensity Package Outline Part Number Package TVP» Half Angle Surga Currant Features Page A SFH420 SMTTOPLED ±60" SFH421 SMTTOPLED ± 60 ° 2.5-5 too GaAs, 950 nm. On tape and reel. 7-25 4-8 100 GaAIAs, 880 nm. On tape and reel.

SFH482

Abstract: BPX66 SFH480 VN 4302
Contextual Info: SIEMENS SFH480 SFH481 SFH482 GaAIAs INFRARED EMITTER Package Dimensions in Inches mm SFH480 291 (7.4) 259 (6.6) ,571 (14£L .492(12.5) ,2 0 8 (5 .3 ), 197 (5.0) Anode £ 0 . 100 " (2 54)_ 0 .189(4.8) S3.1B1 (4.6) T T T 018^(0 45) .106 (2.7) Glass Lens

SFH 209

Abstract: LM 4812 SFH402 IFT00 BPX66
Contextual Info: SIEMENS SFH480 SFH481 SFH482 GaAIAs INFRARED EMITTER Package Dimensions in Inches mm SFH480 .291 (7.4) .259 (6.6) .571 (14.5) .492(12.5) .209 (5.3) 197 (5.0) Anode W- 0.100 (254) 0 .1 8 9 (4.8) 0.181 (4 6) .018 (0.45) 106 (2 7 ) Glass Lens Chip Location

CQY78

Abstract: cqy77 SF-104 equivalent transistor BPW33 solar cell transistor infrared phototransistor application lux meter photoelectric infra red sensor pair CQY78 IV Infrared phototransistor TO18 phototransistor sensitive to green light
Contextual Info: General IR and Photodetector Information Appnote 37 are separated and a photocurrent flows through an external circuit, also without an additional voltage photovoltaic effect . Carriers occurring in the space charge region are immediately sucked off due to the field prevailing in this layer. The

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

lem 732 733

Abstract: SFH 4813
Contextual Info: SIEMENS SFH480 SFH481 SFH482 GaAIAs INFRARED EMITTER Package Dimensions in Inches mm SRM 90 .291 (7.4) .259 {6.6) .571 m .s \ .208(5.31 .402(12.5) .197(5) .189 (4.8) .181 (4.6) (2541 0.0 1 8 {0.45} .106 (2.7) Chfc Location .220(5.6) J208 (SJ3) N Cathode

SFH400-2

Abstract: LD275-2 IR remote control SFH205 sfh910 LD274-3 LD275-3 SFH402-2 LD242-3 Gaa 725
Contextual Info: Infrared Emitters Radiant tntenarty Package Outline r r n 0 r = ~ i p t— !ï-" à i h Part Number Package Type Surge Current HaH Angle mA (t< 10|ie ) A Fealuree Paga SFH420 SMTTOPLED ±60“ 2.5-5 100 GaAs, 950 nm. On tape and reel. 7-25 SFB421 SMTTOPLED

KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Contextual Info: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN