SFH205 Search Results

SFH205

Abstract: VTD205 photodiode 011
Contextual Info: Alternate Source/ Second Source Photodiodes VTD205 SFH205 INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 60 TO-92 TYPE (ROUND LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Large area planar silicon photodiode in a cast epoxy

Contextual Info: VTD205KH Alternate Source/ Second Source Photodiodes SFH205K INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 60 TO-92 TYPE (ROUND LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Large area planar silicon photodiode in a waterclear,

SFH2030F

Abstract: SFH505A KOM2033A SFH2030 ha1900 SFH-2030F SFH200 SFH203
Contextual Info: Photodiodes Part Number Package Outline SFH205 SFH206 Package Type Plastic. daylight filter, solder tabs Plastic. dayligh t filter. solder tabs Dark Cur­ rent Half Angl« VB» 1 0V nA Photo­ sensitivity JUB50 mn 0.5mW/ cm2 nA Radiant Senat ive Area mm* Peak

850 nm LED

Abstract: SFH205 VTD205 741 application current source
Contextual Info: Alternate Source/ Second Source Photodiodes VTD205 SFH205 IN D U STRY EQUIVALENT P A C K A G E DIMENSIONS inch (mm) 1 C A S E 60 PRODUCT DESCRIPTION T O -9 2 T Y P E (ROUND LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) Large area planar silicon photodiode in

VTD205K

Abstract: to-92 type MO-63132 pt 100 to92 SFH205K
Contextual Info: VTD205K Alternate Source/ Second Source Photodiodes SFH205K INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 60 TO-92 TYPE (ROUND LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Large area planar silicon photodiode in a waterclear,

IR LD271

Abstract: BP103 TP20 BP104 SFH20
Contextual Info: LD271 111LEADS LD271L SIEMENS GaAs INFRARED EMITTER Maximum Ratings FEATURES • T1% 5 mm Package • Lightly Diffused Gray Plastic Lens • • • • • LD271L, 1" Leads Long Term Stability Medium Wide Beam, 50° High Power Matches Photodiodes SFH205 or BP104

VTD205H

Contextual Info: VTD205H Alternate Source/ Second Source Photodiodes SFH205 INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 60 TO-92 TYPE (ROUND LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Large area planar silicon photodiode in a cast epoxy

Contextual Info: VTD205KH Alternate Source/ Second Source Photodiodes SFH205K INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 60 TO-92 TYPE (ROUND LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Large area planar silicon photodiode in a waterclear,

SFH205

Contextual Info: Alternate Source/ Second Source Photodiodes VTD205H SFH205 INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 60 TO-92 TYPE (ROUND LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Large area planar silicon photodiode in a cast epoxy

Contextual Info: Alternate Source/ Second Source Photodiodes VTD205H SFH205 INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 60 TO-92 TYPE (ROUND LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Large area planar silicon photodiode in a cast epoxy

0F016

Abstract: lp800
Contextual Info: SFH205FA Silicon PIN Photodiode Daylight Filter Dimensions in inches mm 1336 (34) 1.258(32) .157 , .031(0.8) l 4 . 0 f •016|(0 4) r •■I 'j J268 (6.91 ”^\020x. 024^0.5x0.6) 012X.016 (0.3x04) Surface Not Flat GE006651 FEATURES • Especially suitable for applications of

Contextual Info: VTD205KH Alternate Source/ Second Source Photodiodes SFH205K INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 60 TO-92 TYPE (ROUND LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Large area planar silicon photodiode in a waterclear,

Contextual Info: Alternate Source/ Second Source Photodiodes VTD205 SFH205 IN D U STRY EQUIVALENT P ACKA G E DIM ENSIONS inch (mm) C A S E GO PRODUCT DESCRIPTION T O -9 2 T Y P E (ROUND LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) Large area planar silicon photodiode in a cast epoxy sidelooker, sim ila r in

BP104 siemens

Abstract: TP20 ld271 SFH205 jas 210
Contextual Info: SIEMENS LD271 LD271L 1 " LEADS G a A s INFRARED EMITTER * High Power * Matches Photodiodes SFH205 or BP104 or Phototransistors BP103B Characteristics TA=25°C * Lightly Diffused Gray Plastic Lens * LD271L, 1 " Leads • Long Term Stability * Medium Beam, ±25°

LT1360/1/2

Contextual Info: LT1360 50MHz, 800V/µs Op Amp U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 50MHz Gain Bandwidth 800V/µs Slew Rate 5mA Maximum Supply Current 9nV/√Hz Input Noise Voltage Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads

8PX43

Abstract: SFH415T GKDb L81a SFH402-2 SFH910 SFH485 SFH462 sfh481-3 LD275
Contextual Info: Infrared Emitters Radiant Intensity Package Outline Part Number Package TVP» Half Angle Surga Currant Features Page A SFH420 SMTTOPLED ±60" SFH421 SMTTOPLED ± 60 ° 2.5-5 too GaAs, 950 nm. On tape and reel. 7-25 4-8 100 GaAIAs, 880 nm. On tape and reel.

TSHA3400

Abstract: "Photo Interrupter" sharp 306 transistor Infrared emitter TELEFUNKEN infrared "Photo Interrupter" 380 transistor LTR-536AD LTE-302-M LTE5238A
Contextual Info: CROSS REFFERENCE GUIDE HOfŒYWELL LITON Infrared Emitter SHARP LITON Infrared Emitter SEP8505/8525 LET-209 GL480 LTE-306 SEP8506/8526 LTE-302-M G L360/380 LTE-4206 GL537 LTE-3270 Photo Transistor SEP8405/8425 LTR-209 GL527 LTE-3271T SEP8406/8426 LTR-301 GL538

Phototransistor TIL81

Abstract: TIL81 Transistor BPX25 til100 Phototransistor bpx25 phototransistor Infrared phototransistor TO18 Phototransistor zm110 phototransistor and applications MRD300
Contextual Info: SILICON PLANAR PHOTOTRANSISTORS GENERAL APPLICATIONS OF FERRANTI PHOTOTRANSISTORS Alarm Systems, Process Control, Edge and Position Sensing, Optical Character Recognition, Tape Readers, Card Readers, Electronic Flash C ontrol, etc. ZM100 SERIES TO-18 HERMETIC ZM100/110, BPX25/29

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

IR TIL81

Abstract: TIL81 Phototransistor TIL81 2 pin phototransistor diode TIL81 TIL100 PHOTOTRANSISTOR 3 PIN bpx25 phototransistor application circuit Phototransistor bpx25 phototransistor
Contextual Info: BPW41D INFRA-RED PHOTODETECTOR The B P W 4 1 D is a large: area, silicon p.i.n. photodiode having a low junction capacitance and consequently capable of fast response times. The active chip is packaged in a plastic moulding which contains a near infra-red transmissive filter such that the device is sensitive to infra-red radiation only, and

Phototransistor TIL81

Abstract: TIL81 Phototransistor TIL100 Phototransistor bpx25 Phototransistor zm110 Phototransistor TIL100 FERRANTI ELECTRONICS Infra-red bpx25 mrd300 equivalent
Contextual Info: COMPETITOR CROSS REFERENCE LIST The following cross-reference list has been compiled as a guide for design engineers and purchasing agents and indicates the nearest Ferranti equivalent to a variety of competitive manufacturer's devices. In some cases there will be minor differences in electrical characteristics and/or package details and

1360 marking

Abstract: lt1360 SFH205 LT1354 LT1359 LT1360CN8 LT1363 ltc 1360 marking 909 amp
Contextual Info: LT1360 50MHz, 800V/µs Op Amp U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 50MHz Gain Bandwidth 800V/µs Slew Rate 5mA Maximum Supply Current 9nV/√Hz Input Noise Voltage Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads

Contextual Info: D IM O T D ^ L G U L I N S ! Final Electrical Specifications LT1319 Infrared Receiver Building Block Ç A B JXÊ ^T FL i nTECHNOLOGY August 1994 F€flTUR€S DCSCRIPTIOn • ■ ■ ■ The LT1319 is a general purpose building block that contains all the circuitry necessary to transform modu­

TCA4401

Abstract: CD 4049 BP TCA440 IC CD 4027 diode zener BZX 61 C 10 tda4050 LD57C diode BAY61 receiver tca440 BAY61
Contextual Info: Remote Control Appnote 34 1. Simple Infrared Remote Control with Low Current Consumption gate 1 drops below the minimum H-level threshold and thus the oscillation is interrupted. The time constant of R1C1-circuit is dimensioned for a burst length of 1 ms. The 1 nF capacitor,