SFH416 Search Results

Contextual Info: bGE D • ö23SbD5 OQMbbtn 112 « S I E G T ^/-// SIEMENS SFH414 SFH415 SFH416 SIEMENS AKT IENGESELLSCHAF GaAs INFRARED EMITTER Package Dimensions in Inches mm SFH 414/415 S u rface n o l flat 2 1 7 (5 5 ) .0 2O1 (5 1) 10 189(4 8) 024 (0 6 ) ! I 016 (0 4;

SFH415 applications

Contextual Info: SFH 415 SFH 416 SIEMENS GaAs Infrared Emitter Dimensions in inches mm C t»p Position .217(5.5) .024(0.6) .016(0.4) .100(2.54) sp a ri a^ng T (1.ÔL, (12p .071(14 .047 T A. Cathode (Diode) ' Collector (Transistor) Approx. weight 0.4g CoHector SFH416 FEATURES

SFH414

Abstract: S415S
Contextual Info: SIEMENS SFH414 SFH415 SFH416 Ò aAs INFRARED EMITTER Package Dimensions in Inches mm SFH 414/415 Chip Position 232(5 9) SFH 416 Surface not flat Crup Position 232(5.9) . FEATU RES • Half Angle SFH414: ±11° SFH415: ± ir SFH416: ±28° • T13/4 Package

TP20

Abstract: FH-41
Contextual Info: SFH415 SFH416 SIEMENS GaAs INFRARED EMITTER FEA TU R ES • Half Angle S F H 41 5: ±17° S FH 416: +28° • T 13/« Package • Highly Efficient GaAs LEDs • Good Linearity lE=f (lF at High Currents • Radiation in the Near Infrared Range • High Reliability

siemens SFH nm

Abstract: sfh418 SFH414
Contextual Info: SIEMENS C M P N T S t OPTO 44E D ASBbBEb OODSMfib 5 SIEMENS ISIEX S FH 414 S FH 415 S FH 416 GaAs Infrared Emitter ' - H l - II Package Dimensions in Inches mrh SFH 414/415 CWp Petition ,016(0.4) ( .1*9(4*) .165 (4¿) _ l ra i (M ) .016(0.4)-} .100 <2*54>

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Wesentliche Merkmale Features • GaAs-IR-Lumineszenzdioden, hergestellt im Schmelzepitaxieverfahren • Gute Linearität /e = /[/p ] bei hohen Strömen • Sehr hoher Wirkungsgrad

8PX43

Abstract: SFH415T GKDb L81a SFH402-2 SFH910 SFH485 SFH462 sfh481-3 LD275
Contextual Info: Infrared Emitters Radiant Intensity Package Outline Part Number Package TVP» Half Angle Surga Currant Features Page A SFH420 SMTTOPLED ±60" SFH421 SMTTOPLED ± 60 ° 2.5-5 too GaAs, 950 nm. On tape and reel. 7-25 4-8 100 GaAIAs, 880 nm. On tape and reel.

TSHA3400

Abstract: "Photo Interrupter" sharp 306 transistor Infrared emitter TELEFUNKEN infrared "Photo Interrupter" 380 transistor LTR-536AD LTE-302-M LTE5238A
Contextual Info: CROSS REFFERENCE GUIDE HOfŒYWELL LITON Infrared Emitter SHARP LITON Infrared Emitter SEP8505/8525 LET-209 GL480 LTE-306 SEP8506/8526 LTE-302-M G L360/380 LTE-4206 GL537 LTE-3270 Photo Transistor SEP8405/8425 LTR-209 GL527 LTE-3271T SEP8406/8426 LTR-301 GL538

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH415 SFH 416 Cathode Approx. weight 0.2 g Area not flat Collector Transistor < o Approx. weight 0.4 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH415 SFH 416 Area not flat o Cathode Diode Collector (Transistor) CO (O (O o X 0) GEX06630 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale

SFH415T

Abstract: SFH415U Q62703-Q1546 SFH415-T sfh 487-2 Q62703-Q1762
Contextual Info: IR-Lumineszenzdioden Gehäuse/Package Infrared Emitters h Type deg. Bestellnummer Ordering code mW/sr 1.3 im SMT-Gehäuse /-peak = 950 nm VF = 1,3 V ( / F = 100 mA) ♦ 8 1.3 in SMT-package (>ipeak = 950 nm) VF = 1.3 V ( / F = 100 mA) SFH420 SFH420-N ±60

TP20

Contextual Info: SIEMENS S FH 415 SFH 416 GaAs INFRARED EMITTER FEATURES • Half Angle SFH415: ±17“ SFH 416: ±28° • T13/4 Package • Highly Efficient GaAs LEDs • Good Linearity lE=f(lF at High Currants • Radiation In the Near Infrared Range • High Pulse Handling Capability

SFH400-2

Abstract: LD275-2 IR remote control SFH205 sfh910 LD274-3 LD275-3 SFH402-2 LD242-3 Gaa 725
Contextual Info: Infrared Emitters Radiant tntenarty Package Outline r r n 0 r = ~ i p t— !ï-" à i h Part Number Package Type Surge Current HaH Angle mA (t< 10|ie ) A Fealuree Paga SFH420 SMTTOPLED ±60“ 2.5-5 100 GaAs, 950 nm. On tape and reel. 7-25 SFB421 SMTTOPLED