SQ4840EY Search Results
SQ4840EY Price and Stock
Vishay Siliconix SQ4840EY-T1_GE3MOSFET N-CH 40V 20.7A 8SO |
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SQ4840EY-T1_GE3 | Reel |
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Vishay Siliconix SQ4840EY-T1_BE3MOSFET N-CH 40V 20.7A 8SOIC |
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SQ4840EY-T1_BE3 | Cut Tape | 1 |
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Vishay Intertechnologies SQ4840EY-T1_GE3N-Channel 40-V (D-S) 175C Mosfet |Vishay SQ4840EY-T1_GE3 |
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SQ4840EY-T1_GE3 | Reel | 2,500 |
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SQ4840EY-T1_GE3 | 2,500 |
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SQ4840EY-T1_GE3 | 143 Weeks | 2,500 |
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Vishay Intertechnologies SQ4840EY-T1_BE3Mosfet, N-Ch, 40V, 20.7A, Soic; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:20.7A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay SQ4840EY-T1_BE3 |
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SQ4840EY-T1_BE3 | Cut Tape | 2,500 |
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Vishay Huntington SQ4840EY-T1_GE3 |
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SQ4840EY-T1_GE3 | 15,000 |
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SQ4840EY Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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SQ4840EY-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 20.7A | Original | 204.48KB | ||||
SQ4840EY-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 20.7A 8SOIC | Original | 10 |
SQ4840EY Datasheets Context Search
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Contextual Info: SQ4840EY Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 40 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.009 ID (A) Configuration RoHS • Package with Low Thermal Resistance 10 |
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SQ4840EY AEC-Q101 SQ4840EY-T1-GE3 18-Jul-08 | |
Contextual Info: SQ4840EY Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) (Ω) at VGS = 10 V 0.009 • TrenchFET Power MOSFET RDS(on) (Ω) at VGS = 4.5 V 0.012 |
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SQ4840EY 2002/95/EC AEC-Q101 SQ4840EY-T1-GE3 11-Mar-11 | |
Contextual Info: SQ4840EY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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SQ4840EY AN609, 1742m 5128m 1136m 5628m 0894m 6457m 04-Apr-11 | |
SQ4840EY-T1-GE3
Abstract: 68669
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SQ4840EY 2002/95/EC AEC-Q101 SQ4840EY-T1-GE3 18-Jul-08 SQ4840EY-T1-GE3 68669 | |
Contextual Info: SQ4840EY www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V 0.012 ID (A) |
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SQ4840EY AEC-Q101 2002/95/EC SQ4840EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SQ4840EY www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V 0.012 ID (A) |
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SQ4840EY AEC-Q101 2002/95/EC SQ4840EY-T1-GE3 11-Mar-11 | |
SQ4840EYContextual Info: SPICE Device Model SQ4840EY Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SQ4840EY 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SQ4840EY | |
AN609Contextual Info: SQ4840EY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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SQ4840EY AN609, 05-Mar-10 AN609 | |
8 pins 4 mosfetContextual Info: SQ4840EY www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V 0.012 ID (A) |
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SQ4840EY AEC-Q101 2002/95/EC SQ4840EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 8 pins 4 mosfet | |
Contextual Info: SQ4840EY www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V 0.012 ID (A) |
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SQ4840EY AEC-Q101 2002/95/EC SQ4840EY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SQ4840EY-T1-GE3Contextual Info: SQ4840EY Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 40 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.009 ID (A) Configuration RoHS • Package with Low Thermal Resistance 10 |
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SQ4840EY AEC-Q101 SQ4840EY-T1-GE3 18-Jul-08 SQ4840EY-T1-GE3 | |
S10-1596-RevContextual Info: SPICE Device Model SQ4840EY Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SQ4840EY 18-Jul-08 S10-1596-Rev | |
SQ4840EY-T1-GE3Contextual Info: SQ4840EY Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) (Ω) at VGS = 10 V 0.009 • TrenchFET Power MOSFET RDS(on) (Ω) at VGS = 4.5 V 0.012 |
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SQ4840EY 2002/95/EC AEC-Q101 SQ4840EY-T1-GE3 18-Jul-08 SQ4840EY-T1-GE3 | |
DPAK/TO-252Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the |
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Ups-2726 VMN-PL0469-1311 DPAK/TO-252 | |
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SQ2315ES
Abstract: SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10
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AEC-Q101 O-262, O-263) VMN-SG2151-1009 SQ2315ES SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10 | |
VMN-SG2151-1406Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param |
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AEC-Q101 VMN-SG2151-1406 VMN-SG2151-1406 | |
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/ |
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AEC-Q101 VMN-SG2151-1212 | |
SQ3427
Abstract: sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309
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AEC-Q101 VMN-SG2151-1209 docu33-4-9337-2727 SQ3427 sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309 |