SQJ858AEP Search Results
SQJ858AEP Price and Stock
Vishay Siliconix SQJ858AEP-T1_GE3MOSFET N-CH 40V 58A PPAK SO-8 |
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SQJ858AEP-T1_GE3 | Digi-Reel | 5,795 | 1 |
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SQJ858AEP-T1_GE3 | 3,000 | 1 |
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Vishay Siliconix SQJ858AEP-T1_BE3MOSFET N-CH 40V 58A PPAK SO-8 |
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SQJ858AEP-T1_BE3 | Cut Tape | 2,893 | 1 |
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Vishay Intertechnologies SQJ858AEP-T1_GE3Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ858AEP-T1_GE3) |
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SQJ858AEP-T1_GE3 | Reel | 24,000 | 20 Weeks | 3,000 |
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SQJ858AEP-T1_GE3 | 3,741 |
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SQJ858AEP-T1_GE3 | 14,974 | 13 |
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SQJ858AEP-T1_GE3 | Cut Strips | 14,974 | 25 Weeks | 1 |
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SQJ858AEP-T1_GE3 | Reel | 24,000 | 3,000 |
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SQJ858AEP-T1_GE3 | 1,397 |
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SQJ858AEP-T1_GE3 | 1,117 |
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SQJ858AEP-T1_GE3 | 1 |
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SQJ858AEP-T1_GE3 | Reel | 12,000 | 3,000 |
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SQJ858AEP-T1_GE3 | 15,000 | 22 Weeks | 3,000 |
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SQJ858AEP-T1_GE3 | 21 Weeks | 3,000 |
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Vishay Intertechnologies SQJ858AEP-T1-GE3Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ858AEP-T1-GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQJ858AEP-T1-GE3 | Reel | 111 Weeks | 3,000 |
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SQJ858AEP-T1-GE3 | 143 Weeks | 3,000 |
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Vishay Intertechnologies SQJ858AEP-T1_BE3Transistor MOSFET N-Channel 40V 58A 4-Pin PowerPAK SO-8L - Tape and Reel (Alt: SQJ858AEP-T1_BE3) |
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SQJ858AEP-T1_BE3 | Reel | 18 Weeks | 3,000 |
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SQJ858AEP-T1_BE3 |
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SQJ858AEP-T1_BE3 | Reel | 3,000 |
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SQJ858AEP Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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SQJ858AEP-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 58A | Original | 194.95KB | ||||
SQJ858AEP-T1_BE3 | Vishay Siliconix | MOSFET N-CH 40V 58A PPAK SO-8 | Original | 193.78KB | ||||
SQJ858AEP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 58A 8-SO | Original | 10 |
SQJ858AEP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SQJ858AEPContextual Info: SQJ858AEP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0063 RDS(on) () at VGS = 4.5 V 0.0075 ID (A) • AEC-Q101 Qualifiedd |
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SQJ858AEP AEC-Q101 SQJ858AEP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SQJ858AEP | |
Contextual Info: SPICE Device Model SQJ858AEP www.vishay.com Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SQJ858AEP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SQJ858AEP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0063 RDS(on) () at VGS = 4.5 V 0.0075 ID (A) • AEC-Q101 Qualified • 100 % Rg and UIS Tested |
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SQJ858AEP AEC-Q101 SQJ858AEP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SQJ858AEP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0063 RDS(on) () at VGS = 4.5 V 0.0075 ID (A) • AEC-Q101 Qualifiedd |
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SQJ858AEP AEC-Q101 SQJ858AEP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
sqj858
Abstract: SQJ858AEP 69003
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SQJ858AEP AEC-Q101 SQJ858AEP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sqj858 SQJ858AEP 69003 | |
Contextual Info: SQJ858AEP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SQJ858AEP AN609, 2339m 0110m 0410m 5217m 5590m 7781m 1527u 17-Aug-11 | |
Contextual Info: Vishay Intertechnology, Inc. Automotive Powertrain – 12 V / 24 V One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components AUTOMOTIVE Automotive Powertrain – 12 V / 24 V More information on the Engineer’s Toolbox, including product datasheet links, can be found at www.vishay.com/ref/et3. |
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IHLP-5050FD-5A 31/VJ. AEC-Q200 HCTF235 JEDEC-J-STD-020 VMN-MS6980-1411-AUPO1 | |
DPAK/TO-252Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the |
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Ups-2726 VMN-PL0469-1311 DPAK/TO-252 | |
Contextual Info: Vishay Intertechnology, Inc. Automotive Body Electronics One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components AUTOMOTIVE Automotive Body Electronics More information on the Engineer’s Toolbox, including product datasheet links, can be found at www.vishay.com/ref/et3. |
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NTCS6030E3. SQS840EN AEC-Q200 AEC-Q101 AEC-Q200-qualified VMN-MS6980-1411-AUBO | |
sq4435
Abstract: SQP120N10-09
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VMN-PL0469-1505 sq4435 SQP120N10-09 | |
VMN-SG2151-1406Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param |
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AEC-Q101 VMN-SG2151-1406 VMN-SG2151-1406 | |
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/ |
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AEC-Q101 VMN-SG2151-1212 | |
SQ3427
Abstract: sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309
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AEC-Q101 VMN-SG2151-1209 docu33-4-9337-2727 SQ3427 sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309 |