SQJQ402E Search Results
SQJQ402E Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SQJQ402E-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 200A POWERPAK8 | Original | 180.16KB |
SQJQ402E Price and Stock
Vishay Siliconix SQJQ402E-T1_GE3MOSFET N-CH 40V 200A PPAK 8 X 8 |
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SQJQ402E-T1_GE3 | Cut Tape | 38,869 | 1 |
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Vishay Intertechnologies SQJQ402E-T1_GE3- Tape and Reel (Alt: SQJQ402E-T1_GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQJQ402E-T1_GE3 | Reel | 15 Weeks | 2,000 |
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SQJQ402E-T1_GE3 | 6,252 |
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SQJQ402E-T1_GE3 | 17 Weeks | 2,000 |
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SQJQ402E-T1_GE3 | 16 Weeks | 2,000 |
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Vishay Intertechnologies SQJQ402E-T1-GE3MOSFETs N-Channel 40V AEC-Q101 Qualified |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQJQ402E-T1-GE3 | Reel | 2,000 |
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SQJQ402E Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SQJQ402E www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET power MOSFET 40 RDS(on) (Ω) at VGS = 10 V 0.0017 • AEC-Q101 qualified RDS(on) (Ω) at VGS = 4.5 V 0.0020 • 100 % Rg and UIS tested |
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SQJQ402E AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Product Group: Vishay Siliconix, MOSFETs / March 2015 Author: Kim Norton Tel: 1 408-970-5300 E-mail: kim.norton@vishay.com SQJQ402E's New PowerPAK 8x8L 200 A Package Offers Space- and Power-Saving Alternative to D2PAK and DPAK Product Benefits: • |
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SQJQ402E AEC-Q101 SQJQ402E) | |
Contextual Info: SQJQ402E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SQJQ402E AN609, 1551m 3845m 2700m 8875m 1763m 3217m 11-Dec-14 |