SI1012CR Search Results
SI1012CR Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SI1012CR-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 630MA SC-75A | Original | 9 |
SI1012CR Price and Stock
Vishay Siliconix SI1012CR-T1-GE3MOSFET N-CH 20V SC75A |
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SI1012CR-T1-GE3 | Reel | 63,000 | 3,000 |
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SI1012CR-T1-GE3 | Bulk | 3,000 |
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SI1012CR-T1-GE3 |
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SI1012CR-T1-GE3 | 39,000 | 1 |
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Vishay Intertechnologies SI1012CR-T1-GE3Trans MOSFET N-CH 20V 0.63A 3-Pin SC-75A T/R - Tape and Reel (Alt: SI1012CR-T1-GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI1012CR-T1-GE3 | Reel | 3,000 | 14 Weeks | 3,000 |
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SI1012CR-T1-GE3 | 149,580 |
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SI1012CR-T1-GE3 | 24,000 | 3,000 |
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SI1012CR-T1-GE3 | 12,000 | 14 Weeks | 3,000 |
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SI1012CR-T1-GE3 | Reel | 36,000 | 3,000 |
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SI1012CR-T1-GE3 | 3,000 |
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SI1012CR-T1-GE3 | 2,400 |
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SI1012CR-T1-GE3 | Reel | 42,000 | 3,000 |
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SI1012CR-T1-GE3 | 3,530 | 1 |
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SI1012CR-T1-GE3 | 16 Weeks | 3,000 |
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SI1012CR-T1-GE3 | 1,237 |
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SI1012CR-T1-GE3 | 15 Weeks | 3,000 |
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SI1012CR-T1-GE3 | 56,674 |
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Vishay BLH SI1012CR-T1-GE3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI1012CR-T1-GE3 | 3,000 | 14 |
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Vishay Spectrol SI1012CR-T1-GE3MOSFET, N CH, W/D, 20V, 0.5A, SC75A, TRANSISTOR POLARITY: N CHANNEL, CONTINUOUS D |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI1012CR-T1-GE3 | 30,000 | 3,000 |
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Vishay Huntington SI1012CR-T1-GE3Trans MOSFET N-CH 20V 0.63A 3-Pin SC-75A T/R / MOSFET N-CH 20V 0.63A SC-75A |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI1012CR-T1-GE3 | 49,800 |
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SI1012CR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SPICE Device Model Si1012CR www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si1012CR 11-Mar-11 | |
Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated |
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Si1012CR SC-75A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated |
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Si1012CR SC-75A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • Halogen-free According to IEC 61249-2-21 |
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Si1012CR 2002/95/EC SC-75A 11-Mar-11 | |
Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • Halogen-free According to IEC 61249-2-21 |
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Si1012CR 2002/95/EC SC-75A 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated |
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Si1012CR SC-75A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model Si1012CR www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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Si1012CR 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Si1012CR-T1-GE3
Abstract: SI1012CR
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Si1012CR 2002/95/EC SC-75A Si1012CR-T1-GE3 11-Mar-11 | |
Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated |
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Si1012CR SC-75A 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SI1012CRContextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated |
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Si1012CR SC-75A 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si1012CR_GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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Si1012CR AN609, 4479u 0026m 1692m 3402m 28-Mar-11 | |
Si1012cr
Abstract: Si1012CR-T1-GE3 si1012r-t1-ge3
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Si1012CR Si1012R SC-75A Si1012CR-T1-GE3 Si1012R-T1-GE3 23-Mar-11 | |
Contextual Info: Vishay Intertechnology, Inc. Medical Diagnostics and Monitoring One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Medical Diagnostics and Monitoring X-Ray Machines 4 Patient Monitoring 5 Cardiac Pacing 6 |
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VMN-MS6761-1212 | |
VJ5301MContextual Info: Vishay Intertechnology, Inc. Medical Diagnostics and Monitoring One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Medical 医療機器 X線機器 4 患者監視装置 5 ペースメーカー 6 血糖値測定器 7 |
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VMN-MS6792-1304-ME VJ5301M | |
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VJ Hi-RelContextual Info: Vishay Intertechnology, Inc. Medical Medical Equipment One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components MED I CAL Medical Medical More information on the Engineer’s Toolbox, including product datasheet links, can be found at www.vishay.com/ref/et3. |
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SFH6732 VMN-MS6984-1410-ME VJ Hi-Rel |