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    SI1416EDH Price and Stock

    Vishay Siliconix SI1416EDH-T1-BE3

    MOSFET N-CH 30V 3.9A/3.9A SC70-6
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    DigiKey () SI1416EDH-T1-BE3 Cut Tape 7,222 1
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    SI1416EDH-T1-BE3 Digi-Reel 7,222 1
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    SI1416EDH-T1-BE3 Reel 6,000 3,000
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    Vishay Intertechnologies SI1416EDH-T1-BE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI1416EDH-T1-BE3)
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    Avnet Americas () SI1416EDH-T1-BE3 Reel 30,000 20 Weeks 3,000
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    SI1416EDH-T1-BE3 Ammo Pack 17 Weeks, 3 Days 1
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    Mouser Electronics SI1416EDH-T1-BE3 53,388
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    Arrow Electronics SI1416EDH-T1-BE3 15,000 20 Weeks 3,000
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    Newark () SI1416EDH-T1-BE3 Cut Tape 2,656 1
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    SI1416EDH-T1-BE3 Reel 1
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    TTI SI1416EDH-T1-BE3 Reel 6,000 3,000
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    EBV Elektronik SI1416EDH-T1-BE3 21 Weeks 3,000
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    IBS Electronics SI1416EDH-T1-BE3 6,000
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    Vishay Intertechnologies SI1416EDH-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI1416EDH-T1-GE3)
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    Avnet Americas SI1416EDH-T1-GE3 Reel 14 Weeks 3,000
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    Mouser Electronics SI1416EDH-T1-GE3 563,831
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    Verical () SI1416EDH-T1-GE3 15,000 3,000
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    SI1416EDH-T1-GE3 6,000 3,000
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    SI1416EDH-T1-GE3 2,895 285
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    Arrow Electronics SI1416EDH-T1-GE3 6,000 14 Weeks 3,000
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    Newark () SI1416EDH-T1-GE3 Reel 3,000
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    SI1416EDH-T1-GE3 Reel 3,000
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    Bristol Electronics SI1416EDH-T1-GE3 3,000
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    TTI SI1416EDH-T1-GE3 Reel 165,000 3,000
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    Rutronik SI1416EDH-T1-GE3 Reel 87,000 3,000
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    Avnet Asia SI1416EDH-T1-GE3 12 Weeks 3,000
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    Chip One Stop SI1416EDH-T1-GE3 Cut Tape 2,895 0 Weeks, 1 Days 5
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    EBV Elektronik SI1416EDH-T1-GE3 15 Weeks 3,000
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    IBS Electronics SI1416EDH-T1-GE3 54,000 3,000
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    Vishay Siliconix SI1416EDH-T1-GE3

    Si1416EDH-T1-GE3 N-channel MOSFET Transistor, 3.9 A, 30 V, 6-Pin SOT-363
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    RS SI1416EDH-T1-GE3 Bulk 20
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    New Advantage Corporation SI1416EDH-T1-GE3 69,000 1
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    Vishay Huntington SI1416EDH-T1-GE3

    MOSFET N-CH 30V 3.9A SOT-363
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    Win Source Electronics SI1416EDH-T1-GE3 15,941
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    SI1416EDH Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    SI1416EDH-T1-BE3
    		Vishay Siliconix MOSFET N-CH 30V 3.9A/3.9A SC70-6 Original PDF 269.26KB
    SI1416EDH-T1-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 3.9A SOT-363 Original PDF 267.86KB

    SI1416EDH Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Si1416EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		Si1416EDH AN609, 9774u 9125m 8816m 6885u 1252u 3841m 9719u 28-Mar-11 PDF

    67580

    Abstract: high current sot-363 p-channel mosfet
    Contextual Info: New Product Si1416EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 3.9 30 0.064 at VGS = 4.5 V 3.9 0.077 at VGS = 2.5 V 3.9 Qg (Typ.) 3.5 nC • Halogen-free According to IEC 61249-2-21


    Original     		Si1416EDH 2002/95/EC OT-363 SC-70 Si1416EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 67580 high current sot-363 p-channel mosfet PDF

    67580

    Abstract: si1416
    Contextual Info: New Product Si1416EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 3.9 30 0.064 at VGS = 4.5 V 3.9 0.077 at VGS = 2.5 V 3.9 Qg (Typ.) 3.5 nC • Halogen-free According to IEC 61249-2-21


    Original     		Si1416EDH 2002/95/EC OT-363 SC-70 Si1416EDH-T1-GE3 11-Mar-11 67580 si1416 PDF

    Contextual Info: New Product Si1416EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 3.9 30 0.064 at VGS = 4.5 V 3.9 0.077 at VGS = 2.5 V 3.9 Qg (Typ.) 3.5 nC • Halogen-free According to IEC 61249-2-21


    Original     		Si1416EDH 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SPICE Device Model Si1416EDH www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si1416EDH 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SPICE Device Model Si1416EDH www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si1416EDH 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF