SI3464DV Search Results

Contextual Info: New Product Si3464DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)e 0.024 at VGS = 4.5 V 8a 0.028 at VGS = 2.5 V 8a 0.030 at VGS = 1.8 V 7.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si3464DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)e 0.024 at VGS = 4.5 V 8a 0.028 at VGS = 2.5 V 8a 0.030 at VGS = 1.8 V 7.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product Si3464DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)e 0.024 at VGS = 4.5 V 8a 0.028 at VGS = 2.5 V 8a 0.030 at VGS = 1.8 V 7.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: SPICE Device Model Si3464DV www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

si3464

Contextual Info: New Product Si3464DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)e 0.024 at VGS = 4.5 V 8a 0.028 at VGS = 2.5 V 8a 0.030 at VGS = 1.8 V 7.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si3464DV_RC

Abstract: SI3464DV 4460 MOSFET AN609
Contextual Info: Si3464DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: SPICE Device Model Si3464DV Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: S-8367/8368 Series www.sii-ic.com STEP-UP 1.2 MHz PWM CONTROL CURRENT LIMIT SWITCHING REGULATOR CONTROLLER Rev.1.1_00 Seiko Instruments Inc., 2013 The S-8367/8368 Series is a CMOS step-up type switching regulator controller which consists of a reference voltage

Contextual Info: S-8367/8368 Series www.sii-ic.com STEP-UP 1.2 MHz PWM CONTROL CURRENT LIMIT SWITCHING REGULATOR CONTROLLER Rev.1.1_01 Seiko Instruments Inc., 2013-2014 The S-8367/8368 Series is a CMOS step-up type switching regulator controller which consists of a reference voltage

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®