SI3909DV Search Results
SI3909DV Price and Stock
Vishay Siliconix SI3909DV-T1-E3MOSFET 2P-CH 20V 6TSOP |
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SI3909DV-T1-E3 | Reel | 3,000 |
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Vishay Siliconix SI3909DV-T1-GE3MOSFET 2P-CH 20V 6TSOP |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3909DV-T1-GE3 | Reel | 3,000 |
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SI3909DV Datasheets (7)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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Si3909DV | Unknown | Metal oxide P-channel FET, Enhancement Type | Original | 197.21KB | 3 | |||
Si3909DV | Vishay Intertechnology | Dual P-Channel 20-V (D-S) MOSFET | Original | 74.81KB | 5 | |||
SI3909DV | Vishay Siliconix | MOSFETs | Original | 57.41KB | 5 | |||
Si3909DV SPICE Device Model |
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Dual P-Channel 20-V (D-S) MOSFET | Original | 181.51KB | 3 | |||
SI3909DV-T1 | Vishay Intertechnology | Dual P-Channel 20-V (D-S) MOSFET | Original | 74.81KB | 5 | |||
SI3909DV-T1-E3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 6TSOP | Original | 10 | ||||
SI3909DV-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 6TSOP | Original | 10 |
SI3909DV Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Si3909DVContextual Info: Si3909DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.200 at VGS = - 4.5 V ± 1.8 - 20 0.235 at VGS = - 3.6 V ± 1.6 0.340 at VGS = - 2.5 V ± 1.3 • Halogen-free According to IEC 61249-2-21 Definition |
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Si3909DV 2002/95/EC Si3909DV-T1-E3 Si3909DV-T1-GE3 18-Jul-08 | |
Contextual Info: Si3909DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.200 at VGS = - 4.5 V ± 1.8 - 20 0.235 at VGS = - 3.6 V ± 1.6 0.340 at VGS = - 2.5 V ± 1.3 • Halogen-free According to IEC 61249-2-21 Definition |
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Si3909DV 2002/95/EC Si3909DV-T1-E3 Si3909DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Si3909DVContextual Info: Si3909DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.200 @ VGS = –4.5 V "1.8 –20 20 0.235 @ VGS = –3.6 V "1.6 0.340 @ VGS = –2.5 V "1.3 S1 S2 TSOP-6 Top View G1 1 6 D1 S2 2 5 S1 G2 3 4 |
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Si3909DV S-61830--Rev. 23-Aug-99 | |
Si3909DVContextual Info: SPICE Device Model Si3909DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si3909DV 18-Jul-08 | |
Contextual Info: Si3909DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.200 at VGS = - 4.5 V ± 1.8 - 20 0.235 at VGS = - 3.6 V ± 1.6 0.340 at VGS = - 2.5 V ± 1.3 • Halogen-free According to IEC 61249-2-21 Definition |
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Si3909DV 2002/95/EC Si3909DV-T1-E3 Si3909DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Si3909DVContextual Info: Si3909DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.200 @ VGS = –4.5 V "1.8 –20 20 0.235 @ VGS = –3.6 V "1.6 0.340 @ VGS = –2.5 V "1.3 S1 S2 TSOP-6 Top View G1 1 6 D1 S2 2 5 S1 G2 3 4 |
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Si3909DV 18-Jul-08 | |
Contextual Info: Si3909DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.200 @ VGS = –4.5 V "1.8 –20 20 0.235 @ VGS = –3.6 V "1.6 0.340 @ VGS = –2.5 V "1.3 S1 S2 TSOP-6 Top View G1 1 6 D1 S2 2 5 S1 G2 3 4 |
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Si3909DV 08-Apr-05 | |
Si3909DVContextual Info: SPICE Device Model Si3909DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
Si3909DV S-50836 16-May-05 | |
Si3909DVContextual Info: SPICE Device Model Si3909DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
Si3909DV 09-Apr-03 | |
MOSFET 4407
Abstract: 4407 4407 mosfet 9434 74812 4507 mosfet 0624 CIRCUIT 4407 AN609 Si3909DV
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Si3909DV AN609 19-Jul-07 MOSFET 4407 4407 4407 mosfet 9434 74812 4507 mosfet 0624 CIRCUIT 4407 | |
61830Contextual Info: Si3909DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.200 @ VGS = –4.5 V "1.8 0.235 @ VGS = –3.6 V "1.6 0.340 @ VGS = –2.5 V "1.3 S1 S2 TSOP-6 Top View G1 1 6 D1 S2 2 5 S1 G2 3 4 |
Original |
Si3909DV S-61830--Rev. 23-Aug-99 61830 | |
VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
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Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05 | |
Siliconix
Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
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2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent | |
GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
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Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 |