SI4202DY Search Results
SI4202DY Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SI4202DY-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 12.1A 8SO | Original | 10 |
SI4202DY Price and Stock
Vishay Siliconix SI4202DY-T1-GE3MOSFET 2N-CH 30V 12.1A 8SOIC |
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SI4202DY-T1-GE3 | Cut Tape | 5,391 | 1 |
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SI4202DY-T1-GE3 | 20,000 |
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SI4202DY-T1-GE3 | 5,000 | 1 |
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SI4202DY-T1-GE3 | 5,082 |
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Vishay Intertechnologies SI4202DY-T1-GE3DUAL N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI4202DY-T1-GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4202DY-T1-GE3 | Reel | 7,500 | 15 Weeks | 2,500 |
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SI4202DY-T1-GE3 | 3,817 |
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SI4202DY-T1-GE3 | 2,500 | 2,500 |
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SI4202DY-T1-GE3 | Reel | 2,500 |
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SI4202DY-T1-GE3 | 146 |
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SI4202DY-T1-GE3 | Reel | 12,500 | 2,500 |
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SI4202DY-T1-GE3 | 17 Weeks | 2,500 |
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SI4202DY-T1-GE3 | 16 Weeks | 2,500 |
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Vishay Intertechnologies SI4202DY-T1-GE3.Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:12.1A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Power Dissipation:3.7W; No. Of Pins:8Pins Rohs Compliant: Yes |Vishay SI4202DY-T1-GE3. |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4202DY-T1-GE3. | Reel | 7,500 | 2,500 |
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Vishay BLH SI4202DY-T1-GE3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4202DY-T1-GE3 | 183 | 5 |
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Vishay Semiconductors SI4202DY-T1-GE3SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 12.1A I(D), 30V, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MS-012AA |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4202DY-T1-GE3 | 1,712 |
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SI4202DY Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si4202DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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Si4202DY AN609, 2175m 2923m 2439m 3089u 1542m 7069m 8017m | |
Contextual Info: Si4202DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.014 at VGS = 10 V 12.1 0.017 at VGS = 4.5 V 11 Qg (Typ.) 5.4 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si4202DY 2002/95/EC Si4202DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
si4202
Abstract: SI4202DY
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Si4202DY 2002/95/EC Si4202DY-T1-GE3 11-Mar-11 si4202 | |
Si4202Contextual Info: Si4202DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.014 at VGS = 10 V 12.1 0.017 at VGS = 4.5 V 11 Qg (Typ.) 5.4 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si4202DY 2002/95/EC Si4202DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Si4202 | |
Contextual Info: Si4202DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.014 at VGS = 10 V 12.1 0.017 at VGS = 4.5 V 11 Qg (Typ.) 5.4 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si4202DY 2002/95/EC Si4202DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SI4202DYContextual Info: SPICE Device Model Si4202DY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si4202DY 11-Mar-11 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 |