SI4483ADY Search Results

Si4483ADY

Abstract: Si4483A
Contextual Info: SPICE Device Model Si4483ADY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

7636 mosfet

Abstract: 7636 7935 7636 transistor diode 7935 8927 diode 9181 AN609 6901-6 Si4483A
Contextual Info: Si4483ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

Contextual Info: SPICE Device Model Si4483ADY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

si4483ady

Abstract: Si4483A SI4483ADY-T1-GE3 SI4483
Contextual Info: Si4483ADY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0088 at VGS = - 10 V - 19.2 0.0153 at VGS = - 4.5 V - 14.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4483ADY

Abstract: Si4483A SI4483ADY-T1-GE3 S-82659-Rev
Contextual Info: New Product Si4483ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)d 0.0088 at VGS = - 10 V - 19.2 0.0153 at VGS = - 4.5 V - 14.6 • • • • Qg (Typ.) 44.8 nC Halogen-free TrenchFET Power MOSFET

Si4483A

Abstract: Si4483ADY
Contextual Info: Si4483ADY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0088 at VGS = - 10 V - 19.2 0.0153 at VGS = - 4.5 V - 14.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si4483ADY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0088 at VGS = - 10 V - 19.2 0.0153 at VGS = - 4.5 V - 14.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4483A

Contextual Info: Si4483ADY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0088 at VGS = - 10 V - 19.2 0.0153 at VGS = - 4.5 V - 14.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si4483ADY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0088 at VGS = - 10 V - 19.2 0.0153 at VGS = - 4.5 V - 14.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs

RTL8105E

Abstract: KB930 rts5137 rts-5137 SY8033BDBC ENE KB9012 la-7201p ISL95831CRZ-T rtl8105 FCBGA989
Contextual Info: A B C D E 1 1 PWWHA 2 Delhi 10RG 2 LA-7201P REV 1.0 Schematic 3 Intel Processor Sandy Bridge / PCH(Cougar Point) 2011-01-31 Rev 1.0 3 4 4 Compal Electronics, Inc. Compal Secret Data Security Classification 2010/09/03 Issued Date Deciphered Date 2012/12/31