SI4840DY Search Results

Si4840DY

Abstract: Si4840DY-T1-E3 Si4840DY-T1-GE3 US2050
Contextual Info: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 ID (A) 0.009 at VGS = 10 V 14 0.012 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Si4840DY

Contextual Info: SPICE Device Model Si4840DY N-Channel 40-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse

Si4840DY

Contextual Info: SPICE Device Model Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4840DY-T1-GE3

Contextual Info: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 ID (A) 0.009 at VGS = 10 V 14 0.012 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

SI4840BDYT1GE3

Abstract: SI4840B
Contextual Info: Specification Comparison www.vishay.com Vishay Siliconix Si4840BDY vs. Si4840DY Description: N-Channel, 40 V D-S MOSFET Package: SO-8 Pin Out: Identical  Part Number Replacements: Si4840BDY-T1-GE3 replaces Si4840DY-T1-GE3 Si4840BDY-T1-E3 replaces Si4840DY-T1-E3

7636

Abstract: 7636 mosfet mosfet 4812 4812 mosfet 1216 AN609 Si4840DY
Contextual Info: Si4840DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 14 0.012 @ VGS = 4.5 V 12 D TrenchFETr Power MOSFET D 100% Rg Tested Pb-free Available D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G

Contextual Info: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 ID (A) 0.009 at VGS = 10 V 14 0.012 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Si4840DY

Abstract: Si4840DY-T1
Contextual Info: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 14 0.012 @ VGS = 4.5 V 12 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4840DY Si4840DY-T1 (with Tape and Reel)

Si4840DY

Contextual Info: Si4840DY New Product Vishay Siliconix N-Channel 40-V D-S MOSFET PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 14 0.012 @ VGS = 4.5 V 12 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

SI4840DY-T1-E3

Abstract: Si4840DY Si4840DY-T1
Contextual Info: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 14 0.012 @ VGS = 4.5 V 12 D TrenchFETr Power MOSFET D 100% Rg Tested Pb-free Available D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G

Si4840DY

Abstract: Si4840DY-T1
Contextual Info: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 14 0.012 @ VGS = 4.5 V 12 D TrenchFETr Power MOSFET D 100% Rg Tested Pb-free Available D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G

Contextual Info: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 ID (A) 0.009 at VGS = 10 V 14 0.012 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Si4840DY

Abstract: Si4840DY-T1-E3 Si4840DY-T1-GE3
Contextual Info: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 ID (A) 0.009 at VGS = 10 V 14 0.012 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

SI4840DY

Contextual Info: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 14 0.012 @ VGS = 4.5 V 12 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View Ordering Information: Si4840DY Si4840DY-T1 (with Tape and Reel)

Contextual Info: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 14 0.012 @ VGS = 4.5 V 12 D TrenchFETr Power MOSFET D 100% Rg Tested Pb-free Available D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G

Si4840DY

Contextual Info: SPICE Device Model Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

4211Q

Abstract: 4210Q panasonic vfd vf 100 fault
Contextual Info: TPS40210-Q1, TPS40211-Q1 www.ti.com. SLVS861A – AUGUST 2008 – REVISED OCTOBER 2008 4.5-V TO 52-V INPUT, CURRENT-MODE BOOST CONTROLLERS

Contextual Info: TPS43335-Q1 TPS43336-Q1 SLVSAV6A – JUNE 2011 – REVISED NOVEMBER 2011 www.ti.com LOW IQ, SINGLE BOOST, DUAL SYNCHRONOUS BUCK CONTROLLER Check for Samples: TPS43335-Q1, TPS43336-Q1 FEATURES 1 • • • • • • • • • • • Two Synchronous Buck Controllers

Contextual Info: TPS43330-Q1 TPS43332-Q1 SLVSA82 – MARCH 2011 www.ti.com LOW IQ, SINGLE BOOST, DUAL SYNCHRONOUS BUCK CONTROLLER Check for Samples: TPS43330-Q1, TPS43332-Q1 FEATURES 1 • • • • • • • • • • • Two Synchronous Buck Controllers One Pre-Boost Controller

20-PIN

Abstract: LTC3835 LTC3835-1 LTC3835EFE LTC3835EUFD FE204
Contextual Info: LTC3835 Low IQ Synchronous Step-Down Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n Wide Output Voltage Range: 0.8V ≤ VOUT ≤ 10V Low Operating Quiescent Current: 80µA OPTI-LOOP Compensation Minimizes COUT ±1% Output Voltage Accuracy

OSC4/SM

Abstract: MDLS-20265 OPTREX C-51505 MDLS-24265 short stop 12v p18 30a rs232 converter dmx Mosfet J49 LCM-S01602 lcm-s02402 Vishay SOT23 MARKING F5
Contextual Info: LatticeXP2 Advanced Evaluation Board User’s Guide January 2009 Revision: EB30_01.3 LatticeXP2 Advanced Evaluation Board User’s Guide Lattice Semiconductor Introduction The LatticeXP2 Advanced Evaluation Board provides a convenient platform to evaluate, test and debug user

Contextual Info: LTC3835 Low IQ Synchronous Step-Down Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n Wide Output Voltage Range: 0.8V ≤ VOUT ≤ 10V Low Operating Quiescent Current: 80µA OPTI-LOOP Compensation Minimizes COUT ±1% Output Voltage Accuracy

qmb-111p

Abstract: NC13 ag 19V DC 90w Battery ER10280 X200C AD1985 82551ER CH-4542 DLP31DN201ML4L 52u27
Contextual Info: 5 4 Version Date Author Remarks 0.1 05.06.2007 WAM Initial version 0.2 28.11.2007 PHA 3 2 1 Correction of PCI-Bus Correction of minor errors D 0.3 05.03.2008 PHA D Fix VCC SB +5V Standby to VCC (+5V) LCD (X15) Pinout compatible with MSM800 12V Supply removed / Supply the 12V external on .