SI4925DDY Search Results

AN609

Abstract: Si4925DDY
Contextual Info: Si4925DDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

si4925ddy-t1-ge3

Contextual Info: New Product Si4925DDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d, e 0.029 at VGS = - 10 V -8 0.041 at VGS = - 4.5 V -8 VDS (V) - 30 • Halogen-free • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ.)

Contextual Info: New Product Si4925DDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d, e 0.029 at VGS = - 10 V -8 0.041 at VGS = - 4.5 V -8 VDS (V) - 30 • Halogen-free • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ.)

Contextual Info: New Product Si4925DDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d, e 0.029 at VGS = - 10 V -8 0.041 at VGS = - 4.5 V -8 VDS (V) - 30 • Halogen-free • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ.)

SI4925DDY

Abstract: SI4925BDY transistor Si4925BDY Si4925BDY-T1-E3 Si4925BDY-T1-GE3 Si4925DDY-T1-GE3
Contextual Info: Specification Comparison Vishay Siliconix Si4925DDY vs. Si4925BDY Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4925DDY-T1-GE3 replaces Si4925BDY-T1-E3 Si4925DDY-T1-GE3 replaces Si4925BDY-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Contextual Info: New Product Si4925DDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d, e 0.029 at VGS = - 10 V -8 0.041 at VGS = - 4.5 V -8 VDS (V) - 30 • Halogen-free • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ.)

82574

Abstract: SI4925DDY Si4925DDY-T1-GE3
Contextual Info: New Product Si4925DDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d, e 0.029 at VGS = - 10 V -8 0.041 at VGS = - 4.5 V -8 VDS (V) - 30 • Halogen-free • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ.)

SI4925DDY

Contextual Info: SPICE Device Model Si4925DDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4925DDY

Abstract: Si4925DDY-T1-GE3 SI4925
Contextual Info: New Product Si4925DDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d, e 0.029 at VGS = - 10 V -8 0.041 at VGS = - 4.5 V -8 VDS (V) - 30 • Halogen-free • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ.)

Tablet

Abstract: SI4925
Contextual Info: Tablet Table of Contents Audio Subsystem, Audio Codec. 3 Display, Ambient Light Sensors. 4

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs