SI4955DY Search Results

SI4955DY Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI4955DY		Vishay Siliconix	MOSFETs		Original	PDF
SI4955DY		Vishay Siliconix	Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs		Original	PDF
Si4955DY SPICE Device Model		Vishay	P-Channel 30-V/20-V (D-S) MOSFET		Original	PDF
SI4955DY-T1-E3		Vishay Siliconix	Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs		Original	PDF

SI4955DY Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Si4955DY Contextual Info: SPICE Device Model Si4955DY Vishay Siliconix Dual P-Channel 30-V/20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4955DY 0-V/20-V 18-Jul-08	PDF
Si4955DY Abstract: Si4955DY-T1-E3 Contextual Info: Si4955DY Vishay Siliconix New Product Asymmetrical Dual P-Channel 30-V/20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 - 30 Channel-2 - 20 rDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V - 5.0 0.100 at VGS = - 4.5 V - 3.7 0.027 at VGS = - 4.5 V - 7.0	Original	Si4955DY 0-V/20-V Si4955DY-T1-E3 08-Apr-05	PDF
Contextual Info: Si4955DY Vishay Siliconix New Product Assymetrical Dual P-Channel 30-V/20-V D-S MOSFETs FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.054 @ VGS = −10 V −5.0 D TrenchFETr Power MOSFETs D Low Gate Drive (2.5 V) Capability For Channel 2 0.100 @ VGS = −4.5 V	Original	Si4955DY 0-V/20-V Si4955DY--E3 Si4955DY-T1--E3 08-Apr-05	PDF
52887 Abstract: 4132-22 6707 7408 4327 7408 and MOSFET 7121 AN609 Si4955DY Contextual Info: Si4955DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4955DY AN609 23-Dec-05 52887 4132-22 6707 7408 4327 7408 and MOSFET 7121	PDF
Si4955DY Contextual Info: SPICE Device Model Si4955DY Vishay Siliconix Dual P-Channel 30-V/20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4955DY 0-V/20-V S-52446Rev. 28-Nov-05	PDF
Si4955DY Contextual Info: SPICE Device Model Si4955DY Vishay Siliconix P-Channel 30-V/20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4955DY 0-V/20-V 0-to-10V 06-Aug-03	PDF
Contextual Info: Si4955DY New Product Vishay Siliconix Assymetrical Dual P-Channel 30-V/20-V D-S MOSFETs FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.054 @ VGS = - 10 V - 5.0 D TrenchFETr Power MOSFETs D Low Gate Drive (2.5 V) Capability For Channel 2 0.100 @ VGS = - 4.5 V	Original	Si4955DY 0-V/20-V Si4955DY-T1 S-31509--Rev. 14-Jul-03	PDF
Si4955DY Abstract: Si4955DY-T1-E3 A1224 Contextual Info: Si4955DY Vishay Siliconix New Product Asymmetrical Dual P-Channel 30-V/20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 - 30 Channel-2 - 20 rDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V - 5.0 0.100 at VGS = - 4.5 V - 3.7 0.027 at VGS = - 4.5 V - 7.0	Original	Si4955DY 0-V/20-V Si4955DY-T1-E3 18-Jul-08 A1224	PDF
Si4955DY Abstract: Si4955DY-T1 Contextual Info: Si4955DY Vishay Siliconix New Product Assymetrical Dual P-Channel 30-V/20-V D-S MOSFETs FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.054 @ VGS = −10 V −5.0 D TrenchFETr Power MOSFETs D Low Gate Drive (2.5 V) Capability For Channel 2 0.100 @ VGS = −4.5 V	Original	Si4955DY 0-V/20-V Si4955DY--E3 Si4955DY-T1--E3 S-32411--Rev. 24-Nov-03 Si4955DY-T1	PDF